eas CAI ELS TEARS ae PN4391 PN4392 PN4393 Discrete POWER & Signal Technologies MMBF4391 MMBF4392 MMBF4393 SOT-23 Ss Mark: 6J /6K/6G N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics. Abso | ute Maxi m u m Ratin gs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voe Drain-Gate Voltage 30 Vv Ves Gate-Source Voltage - 30 Vv lor Forward Gate Current 50 mA Ty ,Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units PN4391 *MMBF4391 Pp Total Device Dissipation 350 225 mW Derate above 25C 2.8 1.8 mWw/C Rec Thermal Resistance, Junction to Case 125 C/W Rea Thermal Resistance, Junction to Ambient 357 556 C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation C6ErAgINWN / C6EPAGWIN / L6EPAGWIWN / C6E0Nd / C6EVNd / L6EVNd N-Channel Switch (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Vsryess Gate-Source Breakdown Voltage lg= 1.0 HA, Vos = 0 - 30 Vv lass Gate Reverse Current Ves= 15 V, Vos = 0 - 1.0 nA Vos = 15 V, Vos = 0, Ty = 150C -0.2 LA Vesgiot) Gate-Source Cutoff Voltage Vos = 20 V, Ip= 1.0 nA PN4391 -40 - 10 Vv PN4392 -2.0 -5.0 Vv PN4393 -0.5 - 3.0 Vv Vasit) Gate-Source Forward Voltage Ig= 1.0 mA, Vos = 0 1.0 Vv lDyott) Drain Cutoff Leakage Current Vos =20V,Ves=12V PN4391 0.1 nA Vos =20V, Vas=7.0V PN4392 0.1 nA Vos = 20 V, Ves=5.0V PN4393 0.1 nA Vos = 20 V, Vag = 12 V, Ta = 150C PN4391 0.2 HA Vos = 20 V, Vas = 7.0 V,Ta = 150C PN4392 0.2 pA Vos = 20 V, Vas = 5.0 V,Ta = 150C PN4393 0.2 A ON CHARACTERISTICS lbss Zero-Gate Voltage Drain Current* Vos = 20 V, Ves = 0 PN4391 50 150 mA PN4392 25 75 mA PN4393 5.0 30 mA Vosion) Drain-Source On Voltage Ip= 12 mA, Ves = 0 PN4391 0.4 Vv Ip = 6.0 mA, Ves= 0 PN4392 0.4 Vv Ip = 3.0 MA, Veg= 0 PN4393 0.4 Vv rosion) Drain-Source On Resistance lp = 1.0 mA, Veg = 0 PN4391 30 Q PN4392 60 Q PN4393 100 Q SMALL-SIGNAL CHARACTERISTICS rds(on) Drain-Source On Resistance Vos = Ves = 0, f= 1.0 kHz PN4391 30 Q PN4392 60 Q PN4393 100 Q Ciss Input Capacitance Vos = 20, Ves = 0, f = 1.0 MHz 14 pF Crss Reverse Transfer Capacitance Ves=12V,f=1.0 MHz PN4391 3.5 pF Ves=7.0V,f=1.0 MHz PN4392 3.5 pF Ves = 5.0 V, f=1.0 MHz PN4393 3.5 pF SWITCHING CHARACTERISTICS tr Rise Time Ipoon) = 12 mA PN4391 5.0 ns IDjen) =6.0mA PN4392 5.0 ns Ip(on) = 3.0 mA PN4393 5.0 ns ti Fall Time Vasior) = 12 V PN4391 15 ns Vasiot) = 6.0 V PN4392 20 ns Vasior) = 3.0 V PN4393 30 ns ton Turn-On Time Ipjon) = 12 MA PN4391 15 ns ID(on) = 6.0 mA PN4392 15 ns Ipion) = 3.0 MA PN4393 15 ns toff Turn-Off Time Vasiot} = 12 V PN4391 20 ns Vasiot) = 6.0 V PN4392 35 ns Vesior) = 3.0 V PN4393 50 ns *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 1.0% C6ErAgINWN / C6EPAGWIN / L6EPAGWIWN / C6E0Nd / C6EVNd / L6EVNd