BSZ0901NSI
OptiMOSTM Power-MOSFET
Features
• Optimized SyncFET for high performance buck converter
• Integrated monolithic Schottky-like diode
• Very low on-resistance RDS(on) @ VGS=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDVGS=10 V, TC=25 °C 40 A
VGS=10 V, TC=100 °C 40
VGS=4.5 V, TC=25 °C 40
VGS=4.5 V,
TC=100 °C
40
VGS=10 V, TA=25 °C,
RthJA=60 K/W2)
25
Pulsed drain current3) ID,pulse TC=25 °C 160
Avalanche current, single pulse4) IAS TC=25 °C 20
Avalanche energy, single pulse
EAS ID=20 A, RGS=25 W80 mJ
Gate source voltage
VGS ±20 V
Value
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Type
Package
Marking
BSZ0901NSI
0901NSI
PG-TSDSON-8 (fused leads)
VDS
30
V
RDS(on),max
2.1
mW
ID
40
A
QOSS
28
nC
QG(0V..10V)
41
nC
Product Summary
Rev. 2.2 page 1 2013-05-13
BSZ0901NSI
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
Ptot TC=25 °C 69 W
TA=25 °C,
RthJA=60 K/W2)
2.1
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 1.8 K/W
Device on PCB
RthJA 6 cm2 cooling area2) - - 60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=10 mA 30 - - V
Breakdown voltage temperature
coefficient
dV(BR)DSS
/dTj
ID=10 mA, referenced
to 25 °C
-15 - mV/K
Gate threshold voltage
VGS(th) VDS=VGS, ID=250 µA 1.2 - 2 V
Zero gate voltage drain current
IDSS VDS=24 V, VGS=0 V - - 0.5 mA
VDS=24 V, VGS=0 V,
Tj=125 °C
- 3 -
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V -10 100 nA
Drain-source on-state resistance
RDS(on) VGS=4.5 V, ID=20 A -2.2 2.8 mW
VGS=10 V, ID=20 A -1.8 2.1
Gate resistance
RG0.4 0.8 1.6 W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=20 A
50 100 - S
4) See figure 13 for more detailed information
Value
Values
3) See figure 3 for more detailed information
Rev. 2.2 page 2 2013-05-13
BSZ0901NSI
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -2600 3458 pF
Output capacitance
Coss -1000 1330
Reverse transfer capacitance
Crss -140 -
Turn-on delay time
td(on) -5.0 -ns
Rise time
tr-7.2 -
Turn-off delay time
td(off) -27 -
Fall time
tf-4.6 -
Gate Charge Characteristics5)
Gate to source charge
Qgs -6.3 8.4 nC
Gate charge at threshold
Qg(th) -4.1 -
Gate to drain charge
Qgd -6.5 8.5
Switching charge
Qsw -8.8 -
Gate charge total
Qg-20 27
Gate plateau voltage
Vplateau -2.5 - V
Gate charge total
Qg
VDD=15 V, ID=30 A,
VGS=0 to 10 V
-41 55 nC
Gate charge total, sync. FET
Qg(sync)
VDS=0.1 V,
VGS=0 to 4.5 V
-16 -
Output charge
Qoss VDD=15 V, VGS=0 V -28 37
Reverse Diode
Diode continuous forward current IS- - 40 A
Diode pulse current
IS,pulse - - 160
Diode forward voltage
VSD
VGS=0 V, IF=7 A,
Tj=25 °C
-0.55 0.7 V
Reverse recovery charge
Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs
- 2 - nC
5) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=15 V,
f=1 MHz
VDD=15 V, VGS=10 V,
ID=30 A, RG,ext=1.6 W
VDD=15 V, ID=30 A,
VGS=0 to 4.5 V
Rev. 2.2 page 3 2013-05-13
BSZ0901NSI
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-1
100
101
102
103
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-6
10-5
10-4
10-3
10-2
10-1
100
10-3
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
0
10
20
30
40
50
60
70
80
0 40 80 120 160
Ptot [W]
TC [°C]
0
10
20
30
40
50
0 40 80 120 160
ID [A]
TC [°C]
Rev. 2.2 page 4 2013-05-13
BSZ0901NSI
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
8 V
10 V
0
1
2
3
4
0 10 20 30 40 50
RDS(on) [mW]
ID [A]
25 °C
150 °C
0
20
40
60
80
100
120
140
160
0 1 2 3 4 5
ID [A]
VGS [V]
0
40
80
120
160
200
240
280
0 40 80 120 160
gfs [S]
ID [A]
2.8 V
3 V
3.2 V
3.5 V
4.5 V
10 V
0
20
40
60
80
100
120
140
160
0 1 2 3
ID [A]
VDS [V]
Rev. 2.2 page 5 2013-05-13
BSZ0901NSI
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=20 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=10 mA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
0
1
2
3
4
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
104
0 10 20 30
C [pF]
VDS [V]
-55 °C
25 °C
125 °C
150 °C
10-1
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2
IF [A]
VSD [V]
Rev. 2.2 page 6 2013-05-13
BSZ0901NSI
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source leakage current 16 Gate charge waveforms
IDSS=f(VDS ); VGS=0 V
parameter: Tj
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
IAV [A]
tAV [µs]
6 V
15 V
24 V
0
2
4
6
8
10
12
0 10 20 30 40 50
VGS [V]
Qgate [nC]
25 °C
75 °C
100 °C
125 °C
10-6
10-5
10-4
10-3
10-2
0 5 10 15 20 25
IDSS [A]
VDS [V]
Rev. 2.2 page 7 2013-05-13
BSZ0901NSI
Package Outline PG-TSDSON-8 (fused leads)
PG-TSDSON-8 (fused leads): Outline
Rev. 2.2 page 8 2013-05-13
BSZ0901NSI
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2 page 9 2013-05-13