SFH620A 5.3 kV TRIOS Optocoupler AC Voltage Input FEATURES * High Current Transfer Ratios - at 10 mA: 40-320% - at 1.0 mA: 45% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VRMS * High Collector-emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100" (2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * V VDE 0884 Available with Option 1 * SMD Option, See SFH6206 Data Sheet D E DESCRIPTION The SFH620A features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of >8.0 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) 3 4 Anode/ Cathode 1 4 Collector Cathode/ Anode 2 3 Emitter .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) 3-9 .008 (.20) .012 (.30) .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) 0.100 (2.54) Maximum Ratings Emitter Reverse Voltage.................................................................................. 6.0 V DC Forward Current........................................................................60 mA Surge Forward Current (tP10 s) ....................................................2.5 A Total Power Dissipation.................................................................. 100 mW Detector Collector-emitter Voltage ..................................................................... 70 V Emitter-collector Voltage..................................................................... 7.0 V Collector Current .............................................................................. 50 mA Collector Current (tP1.0 ms).......................................................... 100 mA Total Power Dissipation.................................................................. 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74........................................................................ 5300 VRMS Creepage...................................................................................... 7.0 mm Clearance ..................................................................................... 7.0 mm Insulation Thickness between Emitter and Detector .................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 ................................................... 175 Isolation Resistance VIO=500 V, TA=25C....................................................................1012 VIO=500 V, TA=100C..................................................................1011 Storage Temperature Range ............................................... -55 to +150C Ambient Temperature Range............................................... -55 to +100C Junction Temperature ....................................................................... 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm)............................................. 260C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-249 February 24, 2000-19 Characteristics (TA=25C) Description Symbol Unit Condition Emitter Forward Voltage VF 1.25 (1.65) V IF=60 mA Capacitance C0 50 pF VR=0 V, f=1.0 MHz Thermal Resistance RthJA 750 K/W -- Capacitance CCE 6.8 pF VCE=5.0 V, f=1.0 MHz Thermal Resistance RthJA 500 K/W -- Collector-emitter Saturation Voltage VCEsat 0.25 (0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CC 0.2 pF -- Detector Package Note: Still air, coupler soldered to PCB or base. Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-emitter Leakage Current by Dash Number Description -1 -2 -3 IC / IF (IF=10 mA) 40-125 63-200 100-320 % IC / IF (IF=10 mA) 30 (>13) 45 (>22) 70 (>34) % Collector-emitter Leakage Current, ICEO VCE=10 V 2.0 (50) 2.0 (50) 5.0 (100) nA 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) SFH620A 2-250 February 24, 2000-19 Figure 1. Current Transfer Ratio (typ.) vs. Temperature IF=10 mA, VCE=5.0 V Figure 4. Transistor Capacitance (typ.) vs. Collector-emitter Voltage TA=25C, f=1.0 MHz Figure 7. Permissible Diode Forward Current vs. Ambient Temperature 20 pF C 15 10 5 CCE 0 10-2 Figure 2. Output Characteristics (typ.) Collector Current vs. Collector-emitter Voltage TA=25C 10-1 10-0 101 V Ve 102 Figure 8. Switching Times Figure 5. Permissible Pulse Handling Capability. Fwd. Current vs. Pulse Width Linear Operation (without saturation) Pulse cycle D=parameter, TA=25C RL=75 IF VCC=5 V IC 47 IF=10 mA, VCC=5.0 V, TA=25C Figure 3. Diode Forward Voltage (typ.) vs. Forward Current Figure 6. Permissible Power Dissipation vs. Ambient Temperature 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) Load Resistance RL 75 Turn-on Time ton 3.0 s Rise Time tr 2.0 s Turn-off Time toff 2.3 s Fall Time tr 2.0 s Cut-off Frequency FCO 250 kHz SFH620A 2-251 February 24, 2000-19