2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–249 February 24, 2000-19
Maximum Ratings
Emitter
Reverse Voltage.................................................................................. 6.0 V
DC Forward Current........................................................................±60 mA
Surge Forward Current (t
P
≤
10
µ
s) ....................................................±2.5 A
Total Power Dissipation.................................................................. 100 mW
Detector
Collector-emitter Voltage ..................................................................... 70 V
Emitter-collector Voltage..................................................................... 7.0 V
Collector Current .............................................................................. 50 mA
Collector Current (t
P
≤
1.0 ms).......................................................... 100 mA
Total Power Dissipation.................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74........................................................................ 5300 V
RMS
Creepage......................................................................................
≥
7.0 mm
Clearance .....................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector ....................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ................................................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C....................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C..................................................................
≥
10
11
Ω
Storage Temperature Range ............................................... –55 to +150
°
C
Ambient Temperature Range............................................... –55 to +100
°
C
Junction Temperature ....................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm)............................................. 260
°
C
Dimensions in Inches (mm)
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
4
3
Collector
Emitter
Anode/
Cathode
Cathode/
Anode
FEATURES
• High Current Transfer Ratios
– at 10 mA: 40–320%
– at 1.0 mA: 45% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
• Isolation Test Voltage, 5300 V
RMS
• High Collector-emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
• SMD Option, See SFH6206 Data Sheet
DESCRIPTION
The SFH620A features a high current transfer ratio,
low coupling capacitance and high isolation volt-
age. These couplers have a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon
planar phototransistor detector, and is incorporated
in a plastic DIP-4 package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
to an operation voltage of 400 V
RMS
or DC.
V
DE
SFH620A
5.3 kV TRIOS
Optocoupler
AC Voltage Input
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH620A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–250 February 24, 2000-19
Characteristics
(
T
A
=25
°
C)
Note:
Still air, coupler soldered to PCB or base.
Current Transfer Ratio
(
I
C
/
I
F
at
V
CE
=5.0 V)
and Collector-emitter Leakage Current by Dash Number
Description Symbol Unit Condition
Emitter
Forward Voltage
V
F
1.25 (
≤
1.65) V
I
F
=±60 mA
Capacitance
C
0
50 pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance
R
thJA
750 K/W —
Detector
Capacitance
C
CE
6.8 pF
V
CE
=5.0 V, f=1.0 MHz
Thermal Resistance
R
thJA
500 K/W —
Package
Collector-emitter Saturation Voltage
V
CEsat
0.25 (
≤
0.4) V
I
F
=10 mA,
I
C
=2.5 mA
Coupling Capacitance C
C
0.2 pF —
Description -1 -2 -3
I
C
/
I
F
(
I
F
=±10 mA) 40–125 63–200 100–320 %
I
C
/
I
F
(
I
F
=±10 mA) 30 (>13) 45 (>22) 70 (>34) %
Collector-emitter Leakage Current,
I
CEO
V
CE
=10 V
2.0 (
≤
50) 2.0 (
≤
50) 5.0 (
≤
100) nA
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH620A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–251 February 24, 2000-19
Figure 1. Current Transfer Ratio (typ.)
vs. Temperature
I
F
=10 mA,
V
CE
=5.0 V
Figure 2. Output Characteristics (typ.)
Collector Current vs. Collector-emit-
ter Voltage
T
A
=25
°
C
Figure 3. Diode Forward Voltage
(typ.) vs. Forward Current
Figure 4. Transistor Capacitance
(typ.) vs. Collector-emitter Voltage
T
A
=25
°
C, f=1.0 MHz
Figure 5. Permissible Pulse Handling
Capability. Fwd. Current vs. Pulse Width
Pulse cycle D=parameter,
T
A
=25
°
C
Figure 6. Permissible Power
Dissipation vs. Ambient Temperature
20
15
10
0
5
pF
C
10-2 10-1 10-0 101102
V
Ve
CCE
Figure 7. Permissible Diode Forward
Current vs. Ambient Temperature
Figure 8. Switching Times
Linear Operation
(without saturation)
I
F
=10 mA,
V
CC
=5.0 V,
T
A
=25
°
C
Load Resistance
R
L
75
Ω
Turn-on Time
t
on
3.0
µ
s
Rise Time
t
r
2.0
µ
s
Turn-off Time
t
off
2.3
µ
s
Fall Time
t
r
2.0
µ
s
Cut-off Frequency F
CO
250 kHz
R
L
=75 Ω
V
CC
=5 V
I
C
47 Ω
I
F
