Semiconductor Group 1 02.96
Type Ordering Code Pin Configuration Marking Package1)
(tape and reel) 1 2 3
BAS 40-04W
BAS 40-05W
BAS 40-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
A1
A1
C1
C1
A2
C2
C1/A2
C1/C2
A1/A2
44s
45s
46s
SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage VR40 V
Forward current IF120 mA
Surge forward current, t≤10 ms IFSM 200 mA
Total power dissipation TS≤106 °CPtot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top – 55 … + 150 °C
Storage temperature range Tstg – 55 … + 150 °C
Thermal Resistance
Junction-ambient2) Rth JA ≤395 K/W
Junction-soldering point Rth JS ≤175 K/W
1) For detailed information see chapter Package Outlines.
2
) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2Cu.
Silicon Schottky Diode BAS 40W
●General-purpose diodes for
high-speed switching
●Circuit protection
●Voltage clamping
●High-level detecting and mixing
BAS 40W
Semiconductor Group 2
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) =10µAV
(BR) 40 – – V
Forward voltage
IF=1mA
I
F=10mA
I
F=15mA
V
F250
350
600
310
450
720
380
500
1000
mV
Reverse current
VR=30V
V
R=40V
I
R–
––
–1
10
µA
Diode capacitance
VR=0V,f= 1 MHz CT–35pF
Charge carrier life time IF=25mA τ–10–ps
Differential forward resistance
IF=10mA,f=10kHz R
F–10–Ω
Series inductance LS–2–nH
Semiconductor Group 3
BAS 40W
Forward current IF=f(VF)
Diode capacitance CT=f(VR)
Reverse current IR=f(VR)
Differential forward resistance
RF=f(IF)
Semiconductor Group 4
BAS 40W
Forward current IF=f(TA;TS*)
*Package mounted on epoxy
Permissible Pulse load IFmax/IFDC =f (tp)
Permissible load RthJS =f(tp)
