T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 1 of 6
2N3700
Availa ble on
commercial
versions
Low Power NPN Silicon Transistor
Qualified per MIL-PRF-19500/391
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
DESCRIPTION
This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is
military qualified for high-reliability applications.
TO-18 (TO-206AA)
Package
Also available in:
UB package
(surface mount)
2N3700UB
TO-39 (TO-205AD)
(leaded)
2N3019
TO-5 package
(leaded)
2N3019S
TO-46 (TO-206AB)
(leaded)
2N3057A
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3700 number.
• JAN, JANTX, JANTXV and JANS qualifications are availa ble per MIL-PRF-19500/391.
• Rad hard levels are also available per MIL-PRF-19500/39 1. (See RHA datasheet for
JANS_2N3700.)
• RoHS compliant versions available (commercial grade only).
APPLICA TIONS / BENEFITS
• Leaded, herme tic ally seal ed TO-18 package.
• Lightweight.
• Low power.
• Military and other high-reliabi lity applications.
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Thermal Impedance Junction-to-Ambient
RӨJA
325
oC/W
Thermal Impedance Junction-to-Case
RӨJC
150
oC/W
Collector-Emitter Voltage
V
CEO
80
V
Collector-Base Voltage
VCBO
140
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Total Power Dissipation: @ TA = +25
o
C
(1)
@ TC = +25
o
C
(2)
PD 0.5
1.0
W
Notes: 1. Derate linearly 2.85 mW/°C for TA ≥ +25 °C.
2. Derate linearly 10.3 mW/°C for TC ≥ +25 °C.
T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 2 of 6
2N3700
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, nickel plated kovar base, nickel cap.
• TERMINALS: Gold plate over nickel, kovar for JANS. Gold plate over nickel, kovar, solder dipped for JAN, JANTX, and JANTXV.
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 0.3 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3700 (e4)
Reliability Level
JAN = JAN leve l
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e4 = RoHS compliant (without
solder dip)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
f
Frequency
IB
Base current (dc)
IE
Emitter current (dc)
TA
Ambient temperature
TC
Case temperature
VCB
Collector to base voltage (dc)
VCE
Collector to emitter voltage (dc)
VEB
Emitter to base voltage (dc)
T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 3 of 6
2N3700
ELECTRICAL CHARACTERISTICS @ TA = +25 °C un les s otherwise note d
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mA
V(BR)CEO 80 V
Collector-Base Cutoff Current
VCB = 140 V
ICBO 10 µA
Emitter-Base Cutoff Current
VEB = 7 V
IEBO1 10 µA
Collector-Emitter Cutoff Current
VCE = 90 V
ICES 10 nA
Emitter-Base Cutoff Current
VEB = 5.0 V
IEBO2 10 nA
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1.0 A, VCE = 10 V
hFE
100
50
90
50
15
300
300
300
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
IC = 500 mA, IB = 50 mA VCE(sat)
0.2
0.5 V
Base-Emitter Saturation Voltage
VBE(sat) 1.1 V
I
C
= 150 mA, I
B
= 15 mA
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Shor t-Circuit Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 5. 0 V, f = 1.0 kHz hfe 80 400
Magnitude of Small-Signa l Short -Circuit Forward Current
Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz |hfe| 5.0 20
Output Capac ita nc e
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 12 pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 60 pF
T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 4 of 6
2N3700
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted (continued)
SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = 25 °C, 1 cycle, t = 10 ms
Test 1
2N3700
V
CE
= 10 V
IC = 180 mA
Test 2
2N3700
V
CE
= 40 V
IC = 45 mA
Test 3
2N3700
V
CE
= 80 V
IC = 22.5 mA
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area @ TA = 25 ºC
I
C
– COLLECTOR CURRE NT - A
T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 5 of 6
2N3700
GRAPHS
TA (oC) Ambient
FIGURE 1
Temperature-Power Derating (RӨJA)
Leads = 0.125 inch (3.175mm)
TC (oC) Case at base
FIGURE 2
Temperature-Power Derating (RӨJC)
Maximum DC Operation Rating (W)
Maximum DC Operation Rating (W)
T4-LDS-0185-2, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 6 of 6
2N3700
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. This dev ic e may be measured by
direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies betw een L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.178
0.195
4.52
4.95
CH
0.170
0.210
4.32
5.33
HD
0.209
0.230
5.31
5.84
LC
0.100 TP
2.54 TP
6
LD
0.016
0.021
0.41
0.53
7,8
LL
0.500
0.750
12.70
19.05
7,8
LU
0.016
0.019
0.41
0.48
7,8
L1
-
0.050
-
1.27
7,8
L2
0.250
-
6.35
-
7,8
P
0.100
-
2.54
-
Q
-
0.030
-
0.76
5
TL
0.028
0.048
0.71
1.22
3,4
TW
0.036
0.046
0.91
1.17
3
r
-
0.010
-
0.25
10
α
45° TP
45° TP
6
1, 2, 9, 11, 12
