PD-97301D 2N7606U3 IRHLNJ77034 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) TECHNOLOGY Product Summary Part Number IRHLNJ77034 IRHLNJ73034 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.039 0.039 ID 22A* 22A* SMD-0.5 International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC's, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available. Features: n n n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter ID @VGS = 4.5V,TC = 25C ID @VGS = 4.5V,TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 22* 20 88 57 0.45 10 63 22 5.7 8.8 -55 to 150 300 (for 5s) 1.0 (Typical) A W W/C V mJ A mJ V/ns C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 10/20/15 IRHLNJ77034, 2N7606U3 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Min Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 60 -- -- V -- 0.068 -- V/C -- -- 0.039 1.0 -- 15 -- -- -- -4.9 -- -- -- 2.0 -- -- 1.0 10 V mV/C S nA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 34 8.0 16 26 145 54 30 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 2015 488 4.5 -- -- -- Rg Gate Resistance VGS = 4.5V, ID = 20A VDS = VGS, ID = 250A nC VDS = 10V, IDS = 20A VDS = 48V ,VGS = 0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 22A VDS = 30V ns VDD= 30V, ID = 22A, VGS = 5.0V, RG = 7.5 A nH pF 1.45 Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- -- -- -- -- 22* 88 1.2 160 704 Test Conditions A V ns nC Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 2.2 Test Conditions C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHLNJ77034, 2N7606U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Units Test Conditions V A VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10V VDS= 48V, VGS = 0V 0.045 VGS = 4.5V, ID = 20A -- 0.039 VGS = 4.5V, ID = 20A -- 1.2 V VGS = 0V, ID = 22A Upto 300K Rads (Si)1 Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (SMD-0.5) 60 1.0 -- -- -- -- 2.0 100 -100 1.0 -- Diode Forward Voltage nA 1. Part numbers IRHLNJ77034, IRHLNJ73034 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range (MeV/(mg/cm2)) (MeV) (m) VDS (V) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= 0V -2V -4V -5V -6V -7V 300 7.5% 38 7.5% 60 60 60 60 60 - 62 5% 355 7.5% 33 7.5% 60 60 60 60 - - 85 5% 380 7.5% 29 7.5% 60 60 60 - - - Bias VDS (V) 38 5% 70 60 50 40 30 20 10 0 LET=38 5% LET=62 5% LET=85 5% 0 -1 -2 -3 -4 -5 -6 -7 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHLNJ77034, 2N7606U3 100 VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.30V 10 2.30V 60s PULSE WIDTH, Tj = 25C 1 0.1 1 10 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.50V BOTTOM 2.30V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 Pre-Irradiation 10 2.3V 60s PULSE WIDTH Tj = 150C 1 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 100 T J = 150C ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 10 T J = 25C 1 VDS = 25V 15 60s PULSE WIDTH 0.1 2 2.5 3 3.5 4 4.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 VDS , Drain-to-Source Voltage (V) ID = 22A 1.5 1.0 0.5 VGS = 4.5V 0.0 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com RDS(on), Drain-to -Source On Resistance ( m) 100 ID = 22A 90 80 70 60 T J = 150C 50 40 30 20 T J = 25C 10 0 2 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) IRHLNJ77034, 2N7606U3 4 6 8 10 12 100 90 80 T J = 150C 70 60 50 T J = 25C 40 30 20 Vgs = 4.5V 10 0 10 20 30 40 50 60 70 VGS, Gate -to -Source Voltage (V) ID, Drain Current (A) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current 90 80 2.5 ID = 1.0mA VGS(th) Gate threshold Voltage (V) RDS(on), Drain-to -Source On Resistance (m) Pre-Irradiation 80 70 2.0 1.5 1.0 0.5 ID = 50A ID = 250A ID = 1.0mA ID = 150mA 0.0 60 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Temperature ( C ) T J , Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLNJ77034, 2N7606U3 4000 12 VGS = 0V, f = 1 MHz Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 3200 ID = 22A VGS, Gate-to-Source Voltage (V) 3600 C, Capacitance (pF) Pre-Irradiation Coss = Cds + Cgd 2800 2400 Ciss 2000 Coss 1600 1200 800 10 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 17 Crss 400 0 0 1 10 0 100 5 10 15 20 25 30 35 40 45 50 55 60 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 100 35 LIMITED BY PACKAGE 30 10 ID, Drain Current (A) ISD, Reverse Drain Current (A) T J = 150C T J = 25C 1 0.1 25 20 15 10 5 VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) Fig 11. Typical Source-to-Drain Diode Forward Voltage 6 VDS = 48V VDS = 30V VDS = 12V 25 50 75 100 125 150 T C , Case Temperature (C) Fig 12. Maximum Drain Current Vs. Case Temperature www.irf.com Pre-Irradiation IRHLNJ77034, 2N7606U3 120 EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100s 10 1ms 10ms 1 0.1 Tc = 25C Tj = 150C Single Pulse DC TOP 100 BOTTOM 80 ID 9.8A 13.9A 22A 60 40 20 0 1 10 100 VDS , Drain-to-Source Voltage (V) 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current Thermal Response ( Z thJC ) 10 D = 0.50 1 P DM 0.20 0.10 t1 0.05 t2 0.02 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 7 IRHLNJ77034, 2N7606U3 Pre-Irradiation V(BR)DSS tp 15V DRIVER L VDS D.U.T. RG + V - DD IAS VGS 20V A I AS 0.01 tp Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 4.5V 50K .2F 12V QGS .3F QGD D.U.T. VG + V - DS VGS 3mA IG Charge Fig 17a. Basic Gate Charge Waveform VDS Fig 17b. Gate Charge Test Circuit RD VDS 90% VGS D.U.T. RG ID Current Sampling Resistors VDD + - VGS Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit 8 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com Pre-Irradiation IRHLNJ77034, 2N7606U3 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 0.26mH Peak IL = 22A, VGS = 10V ISD 22A, di/dt 328A/s, VDD 60V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2015 www.irf.com 9