Absolute Maximum Ratings
Parameter Units
ID @VGS = 4.5V,TC = 25°C Continuous Drain Current 22*
ID @VGS = 4.5V,TC = 100°C Continuous Drain Current 20
IDM Pulsed Drain Current 88
PD @ TC = 25°C Max. Power Dissipation 57 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy 63 mJ
IAR Avalanche Current 22 A
EAR Repetitive Avalanche Energy 5.7 mJ
dv/dt Peak Diode Recovery dv/dt 8.8 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 1.0 (Typical) g
Pre-Irradiation
°C
A
RADIATION HARDENED IRHLNJ77034
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
10/20/15
www.irf.com 1
60V, N-CHANNEL
TECHNOLOGY
For footnotes refer to the last page
SMD-0.5
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
* Current is limited by package
2N7606U3
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLNJ77034 100K Rads (Si) 0.039Ω 22A*
IRHLNJ73034 300K Rads (Si) 0.039Ω 22A*
n ESD Rating: Class 1B per MIL-STD-750,
Method 1020
PD-97301D
IRHLNJ77034, 2N7606U3 Pre-Irradiation
2www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 22*
ISM Pulse Source Current (Body Diode)—— 88
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 22A, VGS = 0V
trr Reverse Recovery Time — — 160 ns Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 704 nC VDD ≤ 25V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 250µA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.068 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.039 ΩVGS = 4.5V, ID = 20A
Resistance
VGS(th) Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
∆VGS(th)/∆TJGate Threshold Voltage Coefficient — -4.9 — mV/°C
gfs Forward Transconductance 15 — — S VDS = 10V, IDS = 20A
IDSS Zero Gate Voltage Drain Current — — 1.0 VDS = 48V ,VGS = 0V
——10 V
DS = 48V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 10V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -10V
QgTotal Gate Charge — — 34 VGS = 4.5V, ID = 22A
Qgs Gate-to-Source Charge — — 8.0 nC VDS = 30V
Qgd Gate-to-Drain (‘Miller’) Charge — — 16
td(on) Turn-On Delay Time — — 26 VDD= 30V, ID = 22A,
trRise Time — — 145 VGS = 5.0V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 54
tfFall Time — — 30
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 2015 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 488 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 4.5 —
nA
nH
ns
µA
Measured from the center of
drain pad to center of source pad
* Current is limited by package
RgGate Resistance 1.45 Ωf = 1.0MHz, open drain
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 2.2 °C/W
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Pre-Irradiation IRHLNJ77034, 2N7606U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter Upto 300K Rads (Si)1Units Test Conditions
Min Max
BVDSS Drain-to-Source Breakdown Voltage 60 — VVGS = 0V, ID = 250µA
VGS(th) Gate Threshold Voltage 1.0 2.0 VGS = VDS, ID = 250µA
IGSS Gate-to-Source Leakage Forward — 100 nA VGS = 10V
IGSS Gate-to-Source Leakage Reverse — -100 VGS = -10V
IDSS Zero Gate Voltage Drain Current — 1.0 µA VDS= 48V, VGS = 0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) — 0.045 Ω VGS = 4.5V, ID = 20A
RDS(on) Static Drain-to-Source On-state
VSD Diode Forward Voltage— 1.2 V VGS = 0V, ID = 22A
Resistance (SMD-0.5) — 0.039 Ω VGS = 4.5V, ID = 20A
1. Part numbers IRHLNJ77034, IRHLNJ73034
Table 2. Typical Single Event Effect Safe Operating Area
LET Energy Range VDS (V)
(MeV/(m
g
/cm2)) (MeV) (
µ
m)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V
38 ± 5% 300 ± 7.5% 38 ± 7.5% 60 60 60 60 60 -
62 ± 5% 355 ± 7.5% 33 ± 7.5% 60 60 60 60 - -
85 ± 5% 380 ± 7.5% 29 ± 7.5% 60 60 60 - - -
0
10
20
30
40
50
60
70
-7-6-5-4-3-2-10
Bias VGS (V)
Bias VDS (V)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
IRHLNJ77034, 2N7606U3 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 150°C
2.3V
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.30V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH, Tj = 25°C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.50V
BOTTOM 2.30V
2.30V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS = 4.5V
ID = 22A
22.533.544.55
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VDS = 25V
60µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
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Pre-Irradiation IRHLNJ77034, 2N7606U3
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs
Temperature
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Temperature ( °C )
60
70
80
90
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
ID = 1.0mA
010 20 30 40 50 60 70 80
ID, Drain Current (A)
10
20
30
40
50
60
70
80
90
100
RDS(on), Drain-to -Source On Resistance (mΩ)
TJ = 25°C
TJ = 150°C
Vgs = 4.5V
2 4 6 8 10 12
VGS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
70
80
90
100
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 22A
TJ = 25°C
TJ = 150°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
VGS(th) Gate threshold Voltage (V)
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
IRHLNJ77034, 2N7606U3 Pre-Irradiation
6www.irf.com
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 12. Maximum Drain Current Vs.
Case Temperature
110 100
VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
C, Capacitance (pF)
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
0.01
0.1
1
10
100
ISD, Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
25 50 75 100 125 150
TC , Case Temperature (°C)
0
5
10
15
20
25
30
35
ID, Drain Current (A)
LIMITED BY PACKAGE
0 5 10 15 20 25 30 35 40 45 50 55 60
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS = 48V
VDS = 30V
VDS = 12V
ID = 22A
FOR TEST CIRCUIT
SEE FIGURE 17
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Pre-Irradiation IRHLNJ77034, 2N7606U3
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 13. Maximum Safe Operating Area
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
120
EAS , Single Pulse Avalanche Energy (mJ)
I
D
TOP 9.8A
13.9A
BOTTOM 22A
1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
P
t
t
DM
1
2
1 10 100
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µs
DC
IRHLNJ77034, 2N7606U3 Pre-Irradiation
8www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
4.5V
Fig 17b. Gate Charge Test Circuit
Fig 17a. Basic Gate Charge Waveform
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
+
-
VDD
VGS
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Pre-Irradiation IRHLNJ77034, 2N7606U3
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.26mH
Peak IL = 22A, VGS = 10V
ISD ≤ 22A, di/dt ≤ 328A/µs,
VDD ≤ 60V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — SMD-0.5
1 = DRAIN
2 = GATE
3 = SOURCE
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2015
