NTR4501N Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 Features * * * * Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available http://onsemi.com V(BR)DSS Applications 20 V * Load/Power Switch for Portables * Load/Power Switch for Computing * DC-DC Conversion RDS(on) TYP ID MAX (Note 1) 70 m @ 4.5 V 3.6 A 85 m @ 2.5 V 3.1 A N-Channel D MAXIMUM RATINGS (TJ= 25C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS 12 V ID 3.2 A 2.4 A 1.25 W Continuous Drain Current (Note 1) Steady State TA = 25C TA = 85C Steady State Power Dissipation (Note 1) Steady State Pulsed Drain Current tp = 10 s PD G S 3 IDM 10.0 A TJ, Tstg -55 to 150 C Continuous Source Current (Body Diode) IS 1.6 A Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Operating Junction and Storage Temperature MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1 2 TR1W SOT-23 CASE 318 STYLE 21 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 Gate TR1 W 2 Source = Specific Device Code = Work Week THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient (Note 1) RJA 100 C/W Junction-to-Ambient (Note 2) RJA 300 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION Device Package Shipping NTR4501NT1 SOT-23 3000 / Tape & Reel NTR4501NT3 SOT-23 10000 / Tape & Reel NTR4501NT1G SOT-23 (Pb-Free) 3000 / Tape & Reel NTR4501NT3G SOT-23 (Pb-Free) 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 July, 2004 - Rev. 3 1 Publication Order Number: NTR4501N/D NTR4501N Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units V(BR)DSS VGS = 0 V, ID = 250 A 20 24.5 V 22 mV/C OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS/TJ IDSS VGS = 0 V TJ = 25C 1.5 A VDS = 16 V TJ = 85C 10 A 100 nA IGSS VDS = 0 V, VGS = 12 V Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 A Negative Threshold Temperature Coefficient VGS(TH)/TJ Gate-to-Source Leakage Current ON CHARACTERISTICS Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS 0.65 1.2 -2.3 V mV/C VGS = 4.5 V, ID = 3.6 A 70 80 VGS = 2.5 V, ID = 3.1 A 85 105 VDS = 5.0 V, ID = 3.6 A 9 m S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 200 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 80 pF 50 QG(TOT) 2.4 VGS = 4.5 V, VDS = 10 V, ID = 3.6 A Gate-to-Source Gate Charge QGS Gate-to-Drain Charge QGD 0.6 td(on) 6.5 6.0 0.5 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 tf 12 ns 12 3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Discharge Time Reverse Recovery Charge ta tb VGS = 0 V, ISD = 1.6 A 0.8 1.2 V 7.1 VGS = 0 V, dIS/dt = 100 A/s, A/s IS = 1.6 A QRR 5 1.9 3.0 3. Pulse Test: Pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTR4501N 7.0 VGS = 2.0 V T = 25C J VGS = 10 V VGS = 2.2 V 6.0 5.0 VGS = 3.0 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 7.0 VGS = 1.8 V 4.0 . 3.0 VGS = 1.6 V 2.0 VGS = 1.4 V 1.0 VDS 10 V 6.0 5.0 4.0 3.0 2.0 1.0 TJ = 100C VGS = 1.2 V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0.20 ID = 3.2 A TJ = 25C 0.10 0.05 1.0 2.0 4.0 3.0 5.0 2.0 2.5 3.0 3.5 Figure 2. Transfer Characteristics 0.25 0.15 1.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics 6.0 0.10 TJ = 25C VGS = 2.5 V 0.09 0.08 VGS = 4.5 V 0.07 0.06 0.05 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.4 1000 VGS = 0 V 1.2 1.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = 25C TJ = 55C ID = 3.2 A VGS = 4.5 V 0.8 0.6 -50 TJ = 150C 100 10 TJ = 100C 1.0 -25 0 25 50 75 100 125 150 2 TJ, JUNCTION TEMPERATURE (C) 6 10 14 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 20 5.0 350 VGS = 0 V TJ = 25C 300 15 QT C, CAPACITANCE (pF) 4.0 250 Ciss 200 100 Coss Crss 3 5 8 10 13 QGD QGS 6 3 1.0 0 0 VGS 9 2.0 50 15 20 18 TJ = 25C ID = 3.2 A 0 0 0.5 1.0 1.5 2.0 2.5 DRAIN-TO-SOURCE VOLTAGE (VOLTS) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 0 3.0 IS, SOURCE CURRENT (AMPS) 4 VDS = 10 V ID = 3.2 A VGS = 4.5 V t, TIME (ns) 12 VDS 3.0 150 td(off) tr 10 td(on) tf 1 VGS = 0 V TJ = 25C 3 2 1 0 0 1 10 100 0.3 RG, GATE RESISTANCE () 0.6 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) NTR4501N 1.2 NTR4501N PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-09 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 NTR4501N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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