Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 3 1Publication Order Number:
NTR4501N/D
NTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
•Leading Planar Technology for Low Gate Charge / Fast Switching
•2.5 V Rated for Low Voltage Gate Drive
•SOT−23 Surface Mount for Small Footprint
•Pb−Free Package is Available
Applications
•Load/Power Switch for Portables
•Load/Power Switch for Computing
•DC−DC Conversion
MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±12 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID3.2 A
Current (Note 1) State TA = 85°C 2.4 A
Steady State Power
Dissipation (Note 1) Steady State PD1.25 W
Pulsed Drain Current tp = 10 s IDM 10.0 A
Operating Junction and Storage Temperature TJ,
Tstg −55 to
150 °C
Continuous Source Current (Body Diode) IS1.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient (Note 1) RJA 100 °C/W
Junction−to−Ambient (Note 2) RJA 300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
G
D
S
Device Package Shipping†
ORDERING INFORMATION
NTR4501NT1 SOT−23 3000 / Tape & Reel
http://onsemi.com
20 V 85 m @ 2.5 V
70 m @ 4.5 V
RDS(on) TYP
3.6 A
ID MAX
(Note 1)
V(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
TR1 = Specific Device Code
W = Work Week
3
TR1W
1
3
Drain
1
Gate 2
Source
N−Channel
NTR4501NT3 SOT−23 10000 / Tape &
Reel
3.1 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTR4501NT1G SOT−23
(Pb−Free) 3000 / Tape & Reel
NTR4501NT3G 10000 /
Tape & Reel
SOT−23
(Pb−Free)
NTR4501N
http://onsemi.com
2
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS VGS = 0 V, ID = 250 A 20 24.5 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/TJ22 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 1.5 A
VDS = 16 V TJ = 85°C 10 A
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 A 0.65 1.2 V
Negative Threshold Temperature
Coefficient VGS(TH)/TJ−2.3 mV/°C
Drain−to−Source On Resistance
R
VGS = 4.5 V, ID = 3.6 A 70 80
m
RDS(on) VGS = 2.5 V, ID = 3.1 A 85 105 m
Forward Transconductance gFS VDS = 5.0 V, ID = 3.6 A 9 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss 200
Output Capacitance Coss VGS = 0 V, f = 1.0 MHz,
V
DS
= 10 V 80 pF
Reverse Transfer Capacitance Crss
VDS
=
10
V
50
Total Gate Charge QG(TOT) 2.4 6.0
Gate−to−Source Gate Charge QGS VGS = 4.5 V, VDS = 10 V,
I
D
= 3.6 A 0.5 nC
Gate−to−Drain Charge QGD
ID
=
3
.
6
A
0.6
SWITCHING CHARACTERISTICS (Note 4)
T urn−On Delay Time td(on) 6.5
Rise Time trV
GS
= 4.5 V, V
DS
= 10 V, 12
ns
Turn−Off Delay Time td(off)
VGS
=
4
.
5
V
,
VDS
=
10
V
,
ID = 3.6 A, RG = 6.0 12 ns
Fall Time tf3
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, ISD = 1.6 A 0.8 1.2 V
Reverse Recovery Time tRR 7.1
Charge Time taVGS = 0 V,
dIS/dt=100A/s
5ns
Discharge Time tbdIS
/
dt = 100 A
/
s,
IS = 1.6 A 1.9
Reverse Recovery Charge QRR
S
3.0 nC
3. Pulse Test: Pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTR4501N
http://onsemi.com
3
VGS = 1.8 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
012345678910
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 1. On−Region Characteristics
VGS = 10 V
VGS = 1.6 V
VGS = 1.4 V
VGS = 3.0 V
VGS = 2.0 V TJ = 25°C
7.0
0 1.0 1.5 2.0 2.5 3.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
VDS ≥ 10 V
TJ = 25°C
TJ = 55°C
TJ = 100°C
0.25
1.0 2.0 3.0 6.0
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 3.2 A
TJ = 25°C
0.05
0.06
0.07
0.08
0.09
0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.4
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
ID = 3.2 A
VGS = 4.5 V
1.0
10
1000
2 6 10 14 18
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage
Current versus Voltage
VGS = 0 V
TJ = 150°C
TJ = 100°C
IDSS, LEAKAGE (nA)
VGS = 2.5 V
VGS = 4.5 V
150
VGS = 2.2 V
VGS = 1.2 V
.
6.0
5.0
4.0
3.0
2.0
1.0
03.5
0.20
0.15
0.10
0.05 4.0 5.0
0.10 TJ = 25°C
1.2
1.0
0.8
0.6 20
NTR4501N
http://onsemi.com
4
td(on)
0
350
0 3 5 8 10 15 20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Crss
Coss
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
0
1.0
2.0
4.0
5.0
0 0.5 1.0 1.5 2.0
QG, TOTAL GATE CHARGE (nC)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total
Charge
TJ = 25°C
ID = 3.2 A
QT
QGD
QGS
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
100
1 10 100
10
t, TIME (ns)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
VDS = 10 V
ID = 3.2 A
VGS = 4.5 V
tr
td(off)
tf
RG, GATE RESISTANCE ()
0
1
2
3
4
0.3 0.6 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
Figure 10. Diode Forward Voltage versus
Current
VGS = 0 V
TJ = 25°C
13 18
300
250
200
150
100
50
3.0
2.5 3.0
15
12
9
6
3
0
VGS
VDS
01.2
NTR4501N
http://onsemi.com
5
PACKAGE DIMENSIONS
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOT−23 (TO−236)
CASE 318−09
ISSUE AJ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
1
3
2
AL
BS
VG
DH
C
KJ
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
NTR4501N
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
NTR4501N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
