2007-04-201
BC817U
54
63
2
1
NPN Silicon AF Transistor Array
• For AF stages and driver applications
• High current gain
• Low collector-saturation voltage
• Two (galvanic) internal isolated transistors
with good matching in one package
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
EHA07178
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
BC817U 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 5
Collector current IC500 mA
Peak collector current ICM 1000
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 115 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
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2007-04-202
BC817U
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 105 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 V(BR)CEO 45 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 V(BR)CBO 50 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain2)
IC = 100 mA, VCE = 1 V
IC = 300 mA, VCE = 1 V
hFE
160
100
250
-
400
-
-
Collector-emitter saturation voltage2)
IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V
Base emitter saturation voltage2)
IC = 500 mA, IB = 50 mA VBEsat - - 1.2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 170 - MHz
Collector-base capacitance
f = 1 MHz, VBE = 10 V Ccb - 6 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 60 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
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2007-04-203
BC817U
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
A
IC
1
10
2
10
3
10
hFE
105 °C
85 °C
65 °C
25 °C
-40 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00223BC 817/818
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
˚C
-50
25
˚C
150
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00222BC 817/818
BEsat
V
2.0 V 4.0
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00221BC 817/818
A
T
150
0
5
10
Ι
CBO nA
50 100
1
10
2
10
4
10
˚C
typ
max
103
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2007-04-204
BC817U
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00218BC 817/818
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 2 4 6 8 10 12 14 16 V20
VCB/VEB
0
5
10
15
20
25
30
35
40
45
50
55
60
pF
75
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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2007-04-205
BC817U
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
Ptotmax/PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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2007-04-206
BC817U
Package SC74
Package Outline
Foot Print
Standard Packing
0.5
0.95
1.9
2.9
546
321
1.1 MAX.
(0.35)
(2.25)
±0.2
2.9 B
0.2
+0.1
-0.05
0.35
Pin 1
marking
M
B6x
0.95
1.9
0.15
-0.06
+0.1
1.6
10˚ MAX.
A
±0.1
2.5
0.25
10˚ MAX.
±0.1
±0.1
A0.2
M
0.1 MAX.
2.7
4
3.15
Pin 1
marking
8
0.2
1.15
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer
2005, June
Date code (Year/Month)
BCW66H
Type code
Pin 1 marking
Laser marking
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
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2007-04-207
BC817U
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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