BLA1011-200,112 - NXP Semiconductors / Philips Semiconductors

1. Product proﬁle

1.1 General description

200 W LDMOS avionics power transistor for transmitter applications at frequencies from

1030 MHz to 1090 MHz.

1.2 Features

■Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a

supply voltage of 36 V and an IDq of 150 mA:

◆Load power ≥200 W

◆Gain ≥13 dB

◆Efﬁciency ≥45 %

◆Rise time ≤50 ns

◆Fall time ≤50 ns

■High power gain

■Easy power control

■Excellent ruggedness

■Source on mounting ﬂange eliminates DC isolators, reducing common mode

inductance

1.3 Applications

■Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.

BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

Rev. 08 — 26 October 2005 Product data sheet

Table 1: Typical performance

RF performance at T

= 25

C in a common source class-AB test circuit; I

= 150 mA; typical

values.

Mode of operation Conditions VDS

(V) PL

(W) Gp

(dB) ηD

(%) tr

(ns) tf

(ns)

Pulsed class-AB:

1030 MHz to 1090 MHz tp=50µs; δ= 2 % 36 200 15 50 35 6

tp= 128 µs; δ= 2 % 36 250 14 50 35 6

tp= 340 µs; δ= 1 % 36 250 14 50 35 6

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 08 — 26 October 2005 2 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

2. Pinning information

[1] Connected to ﬂange

3. Ordering information

4. Limiting values

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

BLA1011-200 (SOT502A)

1 drain

2 gate

3 source [1]

BLA1011S-200 (SOT502B)

1 drain

2 gate

3 source [1]

sym039

Table 3: Ordering information

Type number Package

Name Description Version

BLA1011-200 - ﬂanged LDMOST ceramic package; 2 mounting holes;

2 leads SOT502A

BLA1011S-200 - earless ﬂanged LDMOST ceramic package; 2 leads SOT502B

Table 4: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 75 V

VGS gate-source voltage - ±22 V

Ptot total power dissipation Th≤25 °C; tp=50µs; δ= 2 % - 700 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Product data sheet Rev. 08 — 26 October 2005 3 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

5. Thermal characteristics

[1] Thermal resistance is determined under RF operating conditions; tp = 50 µs, δ = 10 %.

6. Characteristics

7. Application information

7.1 Ruggedness in class-AB operation

The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch

corresponding to VSWR =5:1 through all phases under the following conditions:

VDS = 36 V; f = 1030 MHz to 1090 MHz at rated load power.

Table 5: Thermal characteristics

Symbol Parameter Conditions Typ Unit

Zth(j-h) thermal impedance from junction to heatsink Th = 25 °C[1] 0.15 K/W

Table 6: Characteristics

= 25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=3mA 75 - - V

VGS(th) gate-source threshold voltage VDS = 10 V; ID= 300 mA 4 - 5 V

IDSS drain leakage current VGS =0V; V

DS =36V - - 1 µA

IDSX drain cut-off current VGS =V

GS(th) +9 V;

VDS =10V 45--A

IGSS gate leakage current VGS =±20 V; VDS =0V - - 1 µA

gfs transfer conductance VDS =10V; I

D=10A - 9 - S

RDS(on) drain-source on-state resistance VGS =9V; I

D=10A - 60 - mΩ

Table 7: Application information

RF performance in a common source pulsed class-AB circuit; (t

=50

= 2 %); f = 1030 MHz

and 1090 MHz; T

= 25

C; Z

th(mb-h)

= 0.15 K/W; I

= 150 mA; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - 36 - V

PLload power tp=50µs; δ= 2 % - 200 W

Gppower gain PL= 200 W 13 - dB

ηDdrain efﬁciency tp=50µs; δ=2% 45 - %

trrise time - - 50 ns

tffall time - - 50 ns

Product data sheet Rev. 08 — 26 October 2005 4 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

VDS =36V;I

Dq = 150 mA; f = 1060 MHz; tp=50µs;

δ=2% VDS =36V;I

Dq = 150 mA; f = 1060 MHz; tp=50µs;

δ=2%

Fig 1. Power gain and drain efﬁciency as functions of

load power; typical values Fig 2. Load power as a function of drive power;

typical values

VDS = 36 V; f = 1060 MHz; tp=50µs; δ=2% V

DS =36V;I

Dq = 150 mA; Pi= 5.5 W; f = 1060 MHz;

tp=50µs; δ=2%

Fig 3. Power gain as a function of load power; typical

values Fig 4. Load power and power gain as functions of

gate-source voltage; typical values

(dB) Gp

ηD

(%)

ηD

50 250

PL (W)

mgw033

100 150 200 0

250

(W)

150

200

100

PD (W)

mgw034

2468

(dB)

050 PL (W)

mgw035

100 150 200 250

IDq = 1.5 A

150 mA

250

(W)

150

200

100

(dB)

1VGS (V)

mgw036

2345

Product data sheet Rev. 08 — 26 October 2005 5 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

VDS = 36 V; IDq = 150 mA; PL = 200 W; tp=50µs;

δ=2% VDS = 36 V; IDq = 150 mA; PL = 200 W; tp=50µs;

δ=2%

Fig 5. Power gain and drain efﬁciency a functions of

frequency; typical values Fig 6. Input Impedance as a function of frequency

(series components); typical values

VDS = 36 V; IDq = 150 mA; PL = 200 W; tp=50µs; δ=2%

Fig 7. Load impedance as a function of frequency (series components); typical values

1020

(dB) Gp

ηD

(%)

ηD

1040 1100

f (MHz)

mgw037

1060 1080 1020

(W)

1040 1100

f (MHz)

mgw038

1060 1080

1020

(W)

−2

−41040 1100

f (MHz)

mgw039

1060 1080

Product data sheet Rev. 08 — 26 October 2005 6 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

8. Test information

Dimensions in mm.

The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with εr= 6.2 and thickness

0.64 mm.

The other side is unetched and serves as a ground plane.

See Table 8 for list of components.

Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit

40 40

C11

C1 C7

C9 C10

C5 +

mgw032

Product data sheet Rev. 08 — 26 October 2005 7 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

[1] American Technical Ceramics type 100A or capacitor of same quality.

[2] American Technical Ceramics type 100B or capacitor of same quality.

[3] American Technical Ceramics type 700 or capacitor of same quality.

Table 8: List of components (see Figure 8)

Component Description Value Dimensions

C1 multilayer ceramic chip capacitor [1] 39 pF

C2 multilayer ceramic chip capacitor [2] 4.3 pF

C3 multilayer ceramic chip capacitor [1] 11 pF

C4, C7 multilayer ceramic chip capacitor [1] 62 pF

C5 multilayer ceramic chip capacitor [1] 100 pF

C6 electrolytic capacitor 47 µF; 20 V

C8 multilayer ceramic chip capacitor [2] 20 pF

C9 multilayer ceramic chip capacitor [1] 47 pF

C10 multilayer ceramic chip capacitor [3] 1.2 nF

C11 electrolytic capacitor 47 µF; 63V

L1 Ω-shaped enamelled 1 mm copper wire length = 38 mm

R1 metal ﬁlm resistor 301 Ω

R2 SMD 0508 resistor 18 Ω

Product data sheet Rev. 08 — 26 October 2005 8 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

9. Package outline

Fig 9. Package outline SOT502A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502A 99-12-28

03-01-10

0 5 10 mm

scale

Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25 0.5127.94

1.14

0.89

34.16

33.91

5.33

4.32

3.38

3.12

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.01 0.021.100

0.045

0.035 1.345

1.335

0.210

0.170 0.133

0.123 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

w1AB

M M M

Product data sheet Rev. 08 — 26 October 2005 9 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

Fig 10. Package outline SOT502B

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502B 99-12-28

03-01-10

0 5 10 mm

scale

Earless flanged LDMOST ceramic package; 2 leads SOT502B

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25

1.14

0.89

20.70

20.45

5.33

4.32

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.010

0.045

0.035 0.815

0.805

0.210

0.170 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Product data sheet Rev. 08 — 26 October 2005 10 of 13

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

10. Abbreviations

Table 9: Abbreviations

Acronym Description

IDq quiescent drain current

LDMOS Laterally Diffused Metal Oxide Semiconductor

RF Radio Frequency

SMD Surface Mount Device

VSWR Voltage Standing Wave Ratio

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

Product data sheet Rev. 08 — 26 October 2005 11 of 13

11. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BLA1011-200_BLA1

011S-200_8 20051026 Product data sheet - 9397 750 14634 BLA1011-200_7

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

•SOT502B package added.

BLA1011-200_7 20031111 Product speciﬁcation - 9397 750 12246 BLA1011-200_6

BLA1011-200_6 20020318 Product speciﬁcation - 9397 750 09414 BLA1011-200_5

BLA1011-200_5 20010515 Product speciﬁcation - 9397 750 08376 BLA1011-200_4

BLA1011-200_4 20010417 Product speciﬁcation - 9397 750 08139 BLA1011-200_N_3

BLA1011-200_N_3 20010302 Product speciﬁcation - 9397 750 08109 BLA1011-200_N_2

BLA1011-200_N_2 20001201 Product speciﬁcation - 9397 750 07638 BLA1011-200_N_1

BLA1011-200_N_1 20000906 Product speciﬁcation - 9397 750 07326 -

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

Product data sheet Rev. 08 — 26 October 2005 12 of 13

12. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

13. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

14. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

15. Trademarks

Notice — All referenced brands, product names, service names and

trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level Data sheet status[1] Product status[2] [3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheetcontains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.Date of release: 26 October 2005

Document number: 9397 750 14634

Published in The Netherlands

Philips Semiconductors BLA1011-200; BLA1011S-200

Avionics LDMOS transistor

17. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation. . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12

13 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

16 Contact information . . . . . . . . . . . . . . . . . . . . 12