6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 1 http:\\www.everlight.com
Document NoDPC-717-044 Rev. 0 September 12, 2007
4N2X Series
4N3X Series
H11AX Series
Features:
4N2X series: 4N25, 4N26, 4N27, 4N28
4N3X series: 4N35, 4N36, 4N37, 4N38
H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5
High isolation voltage between input and output
(Viso=5000 V rms)
Creepage distance >7.62 mm
Operating temperature up to +110°C
Compact dual-in-line package
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approval pending
NEMKO approval pending
DEMKO approval pending
FIMKO approval pending
CSA approval pending
Description
The 4N2X, 4N3X, H11AX series contains an infrared emitting
diode optically coupled to a phototransistor. It is packaged in a
6-pin DIP package and available in wide-lead spacing and SMD
option.
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
1. Anode
2. Cathode
3. No Connection
4. Emitter
5. Collector
6. Base
Schematic
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Everlight Electronics Co., Ltd. 2 http:\\www.everlight.com
Document NoDPC-717-044 Rev. 0 September 12, 2007
4N2X Series
4N3X Series
H11AX Series
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Rating Unit
Forward current IF 50 mA
Peak forward current (t = 10µs) IFM 1 A
Reverse voltage VR 6 V
70 mW
Input
Power dissipation (TA = 25°C)
Derating factor (above 100°C) PD 3.8 mW/°C
Collector-Emitter voltage VCEO 80 V
Collector-Base voltage VCBO 80 V
Emitter-Collector voltage VECO 7 V
Output
Emitter-Base voltage VEBO 7 V
150 mW
Power dissipation (TA = 25°C)
Derating factor (above 100°C) PC 9.0 mW/°C
Total power dissipation Ptot 200 mW
Isolation voltage *1 V
iso 5000 Vrms
Operating temperature Topr -55~+110 °C
Storage temperature Tstg -55~+125 °C
Soldering temperature *2 T
sol 260 °C
Notes
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6
are shorted together.
*2 For 10 seconds.