2SA1429
2010-03-09
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1429
Power Amplifier Applications
Power Switching Applications
• Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SC3669.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −80 V
Collector-emitter voltage VCEO −80 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Base current IB −1 A
Collector power dissipation PC 1000 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7D101A
Weight: 0.2 g (typ.)
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −80 V, IE = 0 ― ― −1.0 μA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ― ― −1.0 μA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −80 ― ― V
hFE (1)
(Note 2)
VCE = −2 V, IC = −0.5 A 70 ― 240
DC current gain
hFE (2) V
CE = −2 V, IC = −1.5 A 40 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −0.05 A ― −0.2 −0.5 V
Base-emitter saturation voltage VBE (sat) I
C = −1 A, IB = −0.05 A ― −0.9 −1.2 V
Transition frequency fT V
CE = −2 V, IC = −0.5 A ― 80 ― MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ― 45 ― pF
Turn-on time ton ― 0.2 ―
Storage time tstg ― 1.0 ― Switching time
Fall time tf
IB1 = 0.05 A,IB2 = 0.05 A
duty cycle ≤ 1%
― 0.2 ―
μs
Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
IB1
20 μs
VCC = −30 V
Output
30 Ω
IB2
IB1
Input
IB2
A1429
Lot No.
Note 3
Characteristics
indicator
Part No. (or abbreviation code)
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
VCE – IC
−0.01
−0.01 −0.03 −0.1 −0.3 −1
−0.03
−0.05
−0.1
−0.3
−0.5 Common emitter
IC/IB = 20
Ta = 100°C
25
−55
10
−0.01
500
Ta = 100°C
25
−0.03 −0.1 −0.3 −1
30
50
100
300
Common emitter
VCE = −2 V
−55
−0.6
−1.0
0
0
−0.8
−0.4
−0.2
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
IB = −5 mA
−10 −20 −30
−50 −70
−100
Common emitter
Ta = −55°C
−40
−15
−2.0
0
0
−1.6
−1.2
−0.8
−0.4
−2 −4 −6 −8 −10 −12
Common emitter
Ta = 25°C
−20
−15
−10
IB = −5 mA
−30
−1.0
0
0
−0.8
−0.6
−0.4
−0.2
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
IB = −5 mA −10 −20 −30 −50 −70
−100
Common emitter
Ta = 100°C
−1.0
0
0
−0.8
−0.6
−0.4
−0.2
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
IB = −5 mA −10 −20 −30 −50 −70
−100
Common emitter
Ta = 25°C
0
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Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0
0
0.2
0.6
0.8
1.0
1.2
1.4
40 60 80 100 120 140 160
0.4
20
−0.1
−0.01 −0.03 −0.1 −0.3 −1
−0.3
−0.5
−1
−3
Ta = −55°C
25
Common emitter
IC/IB = 20
100
−2.0
0
0
−0.4
−0.8
−1.2
−1.6
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Common emitter
VCE = −2 V
25 Ta = 100°C −55
−5
−0.3
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−1 −3 −10 −30 −100
*: Single nonrepetitive pulse
Ta = 25° C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
1 s*
−0.1
−0.01
VCEO max
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