R
0JC
MBRF10150CT thru 10200CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 150
to
200
Volts
FORWARD CURRENT
- 10
Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
120
Typical Thermal Resistance (Note 2)
5.0
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@TJ
=25 C 8
2
uA
mA
T
C
=135 C
MBRF10150CT
150
105
150
Voltage Rate of Change (Rated VR)
dv/dt 10000
V/us
V
F
V
Maximum Forward
Voltage (Note 1)
I
F
=5A @
I
F
=5A @
I
F
=10A @
I
F
=10A @ T
J
=125 C
T
J
=25 C
T
J
=125 C
T
J
=25 C
0.92
0.75
1.00
0.85
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Device mounted on 135 mm X 135 mm X 8 mm Alumium Plate Heatsink.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Typical Junction Capacitance
per element (Note 3)
C
J
120
pF
REV. 1, Aug-2007, KTHC38
MBRF10200CT
200
140
200
T
J,
T
STG
Operating Junction and Storage
Temperature Range
-65 to +175
℃
G
I
C
E
J
B
K
A
M
D
L
N
F
HH
PIN
1 2 3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
15.50 16.50
10.40
10.0
3.00 3.50
9.30 9.00
2.90 3.60
13.46 14.22
1.15 1.70
0.75
2.70
N
M
L
K
J
I 1.00
2.40
0.70 0.45
3.00 3.30
4.36 4.77
2.48 2.80
2.80
2.50
PIN 1
PIN 3 PIN 2
V
dis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
1
10
100
1000
0.1 1 10 100
1
10
100
1000
0 20 40 60 80 100 120
RATING AND CHARACTERISTIC CURVES
MBRF10150CT thru 10200CT
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
REVERSE VOLTAGE , VOLTS
INSTANTANEOUS REVERSE CURRENT , (uA)
T
J
=25
℃
CAPACITANCE , (PF)
REVERSE VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
f=1MHz
T
J
=25
℃
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT , AMPERES
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.1
1.0
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
J
=25
℃
Pule Width 300us
2% Duty Cycle
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE ,
℃
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT ,
AMPERES
25 75 100 125 15050 175
RESISTIVE OR INDUCTIVE LOAD
8.0
0.0
4.0
2.0
6.0
10.0
T
J
=125
℃
T
J
=75
℃
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
25
50
75
100
125
150
Single Half-Sine-Wave
