Absolute Maximum Ratings Values Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Units RGE = 20 k Tcase = 25/65 C Tcase = 25/65 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 190 / 150 380 / 300 20 800 -40 ... +150 (125) 2500 Class F 40/125/56 V V A A V W C V 150 / 100 380 / 300 1100 6000 A A A A2s SEMITRANS(R) M Low Loss IGBT Modules SKM 150 GB 124 D Inverse Diode IF = -IC IFM = -ICM IFSM I 2t Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C SEMITRANS 3 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon5) Eoff5) VGE = 0, IC = 4 mA VGE = VCE, IC = 4 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 100 A VGE = 15 V; IC = 150 A Tj = 25 (125) C VCE = 20 V, IC = 100 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V3) IC = 100 A, ind. load RGon = RGoff = 8 Tj = 125 C min. typ. max. Units 4,5 - - - - - 54 - 5,5 0,2 9 - 2,1(2,4) 2,6(3,1) - - 6,5 2 - 1 2,45(2,85) - - V V mA mA A V V S - - - - - - 6,5 1000 500 - 700 8,5 1500 600 20 pF nF pF pF nH - - - - - - 50 35 420 60 12 13 - - - - - - ns ns ns ns mWs mWs - - - - - - 2,0(1,8) 2,25(2,1) 1,1 - 58 12 2,5 - 1,2 11 - - V V V m A C - - - - - - 0,15 0,25 0,038 C/W C/W C/W VCES Inverse Diode 8) VF = VEC VF = VEC VTO rt IRRM Qrr IF = 100 A VGE = 0 V; IF = 150 A Tj = 25 (125) C Tj = 125 C 2) Tj = 125 C 2) IF = 100 A; Tj = 125 C2) IF = 100 A; Tj = 125 C2) GB Features * MOS input (voltage controlled) * N channel, homogeneous Silicon structure (NPT-IGBT) * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (12 mm) and creepage distances (20 mm) Typical Applications B 6 - 147 * Switching (not for linear use) * AC inverter drives * UPS Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode per module 1) 2) 3) 5) 8) Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 1000 A/s, VGE = 0 V Use VGEoff = -5... -15 V See fig. 2 + 3; Rgoff = 8 CAL = Controlled Axial Lifetime Technology Cases and mech. data B 6 - 148 (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 143 SKM 150 GB 124 D... M1 50G12 4.X LS -1 1000 M1 50G12 4.X LS -2 35 mWs W T j = 125 C VCE = 600 V VGE = + 15 V RG = 8 Eon 30 800 25 600 Eof f 20 15 400 10 200 5 Ptot E 0 0 0 20 40 60 80 100 TC 120 0 140 160 C Fig. 1 Rated power dissipation Ptot = f (TC) 50 IC 100 150 250 Fig. 2 Turn-on /-off energy = f (IC) M1 50G12 4.X LS -4 M1 50G12 4.X LS -3 40 mWs 35 200 A 1000 Tj = 125 C VCE = 600 V VGE = + 15 V IC = 100 A Eon 30 tp=15s A 1 pulse TC = 25 C Tj 150 C 100 25 100s 20 10 Eof f 1ms 15 10 10ms 1 5 Not for linear use! IC E 0 0,1 0 RG 10 20 30 40 50 60 1 Fig. 3 Turn-on /-off energy = f (RG) 10 100 1000 10000 V Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) M1 50G12 4.X LS -5 2,5 VCE 2 M1 50G12 4.X LS -6 Tj 150 C 12 VGE = 15 V R Goff = 8 I C = 100 A 10 di/dt=300 A/s 900 A/s 1500 A/s 8 1,5 Tj 150 C VGE = 15 V tsc 10 s L < 25 nH ICN = 100 A 6 4 allowed numbers of short circuits: <1000 2 time between short circuits: >1s 1 0,5 ICpuls /IC ICSC/IC 0 0 0 200 VCE 400 600 800 Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 144 0 1000 1200 1400 V 200 VCE 400 600 800 1000 1200 1400 V Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 http://store.iiic.cc/ (c) by SEMIKRON M1 50G12 4.X LS -8 200 Tj = 150 C VGE 15V A 160 120 80 40 IC 0 0 20 40 60 80 100 120 140 TC 160 C Fig. 8 Rated current vs. temperature IC = f (TC) M1 50G12 4.X LS -9 M1 50G12 4.X LS -10 200 200 A A 17V 15V 13V 11V 9V 7V 150 17V 15V 13V 11V 9V 7V 150 100 100 50 50 IC IC 0 0 0 1 2 3 VCE 4 V 5 0 Fig. 9 Typ. output characteristic, t p = 80 s; 25 C VCE 1 2 3 4 5 V Fig. 10 Typ. output characteristic, tp = 80 s; 125 C M1 50G12 4.X LS -12 200 Pcond(t) = VCEsat(t) * IC(t) A VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) 150 VCE(TO)(Tj) 1,3 + 0,0005 (T j -25) [V] 100 typ.: rCE(Tj) = 0,008 + 0,000025 (T j -25) [] 50 max.: r CE(Tj) = 0,0115 + 0,000035 (Tj -25) [] valid for VGE = + 15 +2 -1 IC [V]; IC > 0,3 ICnom 0 0 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON VGE 2 4 6 8 10 12 V 14 Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 0898 http://store.iiic.cc/ B 6 - 145 SKM 150 GB 124 D... M1 50G12 4.X LS -13 M1 50G12 4.X LS -14 20 100 V I Cpuls = 100 A 18 VGE = 0 V f = 1 MHz nF 600V 16 14 Cies 10 800V 12 10 8 Coes 1 6 4 C VGE Cres 2 0 0,1 0 100 QGate 200 300 400 500 600 700 0 nC Fig. 13 Typ. gate charge characteristic VCE 10 20 30 V Fig. 14 Typ. capacitances vs.VCE M1 50G12 4.X LS -15 1000 ns t doff M1 50G12 4.X LS -16 10000 Tj = 125 C VCE = 600 V VGE = 15 V RGon = 8 RGoff = 8 induct. load Tj = 125 C VCE = 600 V VGE = 15 V IC = 100 A induct. load ns t dof f 1000 100 t don t don tr 100 tr tf tf t t 10 10 0 50 100 150 200 250 0 A IC Fig. 15 Typ. switching times vs. IC 40 M1 50G12 4.X LS -18 6 mJ A Tj=125C, typ. 160 60 Fig. 16 Typ. switching times vs. gate resistor R G M1 50G12 4.X LS -17 200 20 RG 5 Tj=25C, typ. 9 Tj=125C, max. 4 13 Tj=25C, max. 120 VCC = 600 V Tj = 125 C VGE = 15 V 6 RG= 3 31 80 2 60 40 1 Eof fD IF 0 0 0 VF 1 2 V Fig. 17 Typ. CAL diode forward characteristic B 6 - 146 0 3 50 IF 100 150 200 A Fig. 18 Diode turn-off energy dissipation per pulse 0898 http://store.iiic.cc/ (c) by SEMIKRON M1 50G12 4.X LS -19 1 M1 50G12 4.X LS -20 1 K/W K/W 0,1 0,1 0,01 0,0001 0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 0,001 single pulse D=0,5 0,2 0,1 0,05 0,02 0,01 0,001 single pulse ZthJC ZthJC 0,00001 0,00001 0,0001 tp 0,001 0,01 0,1 0,0001 0,00001 1 s M1 50G12 4.X LS -22 0,01 0,1 RG= 6 1 s M1 50G12 4.X LS -23 200 VCC = 600 V T j = 125 C VGE = 15 V A 200 0,001 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (t p); D = t p / t c = t p * f Fig. 19 Transient thermal impedance of IGBT ZthJC = f (t p); D = t p / tc = t p * f 250 0,0001 tp A RG= 6 150 VCC = 600 V Tj = 125 C VGE = 15 V IF = 100 A 9 150 9 100 100 13 13 31 50 31 50 60 60 IRR IRR 0 0 0 50 100 150 IF 200 0 A Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; R G) 1000 diF/dt 2000 3000 4000 Fig. 23 Typ. CAL diode peak reverse recovery current I RR = f (diF/dt) M1 50G12 4.X LS -24 20 Typical Applications 5000 6000 A/s C RG= 13 include Switched mode power supplies 6 9 31 15 IF= 150 A VCC = 600 V Tj = 125 C VGE = 15 V 100 A 60 75 A DC servo and robot drives Inverters 10 50 A AC motor speed control 25 A Inductive heating General power switching applications 5 Electronic (also portable) welders Pulse frequencies above 15 kHz Qrr 0 0 1000 diF/dt 2000 3000 4000 5000 6000 A/s Fig. 24 Typ. CAL diode recovered charge Qrr = f (di/dt) (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 147 SKM 150 GB 124 D... SEMITRANS 3 Case D 56 UL Recognized File no. E 63 532 SKM 150 GB 124 D Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions M1 M2 a w B 6 - 148 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units Values (M6) (M6) Units min. typ. max. 3 27 2,5 22 - - - - - - - - 5 44 5 44 5x9,81 325 0898 http://store.iiic.cc/ Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX B without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3). Larger packing units of 12 and 20 pieces are used if suitable Accessories B 6 - 4. SEMIBOX C - 1. (c) by SEMIKRON