BYV26ETR - Vishay Semiconductors

BYV26

Document Number 86040

Rev. 1.6, 14-Apr-05

Vishay Semiconductors

www.vishay.com

949539

Ultra Fast Avalanche Sinterglass Diode

Features

• Glass passivated junction

• Hermetically sealed package

• Very low switching losses

• Low reverse current

• High reverse voltage

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

Switched mode power supplies

High-frequency inverter circuits

Mechanical Data

Case: SOD-57 Sintered glass case

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: approx. 369 mg

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Part Type differentiation Package

BYV26A VR = 200 V; IFAV = 1 A SOD-57

BYV26B VR = 400 V; IFAV = 1 A SOD-57

BYV26C VR = 600 V; IFAV = 1 A SOD-57

BYV26D VR = 800 V; IFAV = 1 A SOD-57

BYV26E VR = 1000 V; IFAV = 1 A SOD-57

Parameter Test condition Part Symbol Value Unit

Reverse voltage = Repetitive

peak reverse voltage

see electrical characteristics BYV26A VR = VRRM 200 V

BYV26B VR = VRRM 400 V

BYV26C VR = VRRM 600 V

BYV26D VR = VRRM 800 V

BYV26E VR = VRRM 1000 V

Peak forward surge current tp = 10 ms, half sinewave IFSM 30 A

Average forward current IFAV 1A

Non repetitive reverse

avalanche energy

I(BR)R = 1 A, inductive load ER10 mJ

Junction and storage

temperature range

Tj = Tstg - 55 to + 175 °C

www.vishay.com

Document Number 86040

Rev. 1.6, 14-Apr-05

BYV26

Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter Test condition Symbol Value Unit

Junction ambient l = 10 mm, TL = constant RthJA 45 K/W

Parameter Test condition Part Symbol Min Typ. Max Unit

Forward voltage IF = 1 A VF2.5 V

IF = 1 A, Tj = 175 °C VF1.3 V

Reverse current VR = VRRM IR5µA

VR = VRRM, Tj = 150 °C IR100 µA

Reverse breakdown voltage IR = 100 µA BYV26A V(BR)R 300 V

BYV26B V(BR)R 500 V

BYV26C V(BR)R 700 V

BYV26D V(BR)R 900 V

BYV26E V(BR)R 1100 V

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26A-

BYV26C

trr 30 ns

BYV26D-

BYV26E

trr 75 ns

Figure 1. Max. Reverse Power Dissipation vs. Junction

Temperature

0 40 80 120 160

100

200

300

400

600

P - Maximum Reverse Power Dissipation (mW

Tj– Junction Temperature (°C)

200

95 9728

500

VR=V

RRM

RthJA= 100 K/W

200V

1000V

400V

600V

800V

RthJA =45K/W

Figure 2. Max. Reverse Current vs. Junction Temperature

0 40 80 120 160 200

95 9729

100

1000

I - Reverse Current ( µA)

Tj– Junction Temperature (°C)

RRM

BYV26

Document Number 86040

Rev. 1.6, 14-Apr-05

Vishay Semiconductors

www.vishay.com

Package Dimensions in mm (Inches)

Figure 3. Max. Average Forward Current vs. Ambient Temperature

Figure 4. Max. Forward Current vs. Forward Voltage

0 40 80 120 160

0.2

0.4

0.6

0.8

1.2

Tamb - Ambient Temperature (°C)

200

95 9730

1.0

RthJA = 100 K/W

RthJA =45K/W

I - Average Forward Current ( A )

FAV

0.001

0.01

0.1

95 9731

I - Forward Current(A)

VF- Forward Voltage(V)

Tj=25°C

Tj=175°C

10723566

Figure 5. Diode Capacitance vs. Reverse Voltage

Figure 6. Diode Capacitance vs. Reverse Voltage

16380

f=1MHz

BYV26C

0.1 1 10 100

V - Reverse Voltage(V)

C - Diode Capacitance ( pF )

16381

f=1MHz

BYV26E

0.1 1 10 100

V - Reverse Voltage(V)

C - Diode Capacitance ( pF )

Cathode Identification

0.82 (0.032) max.

Sintered Glass Case

SOD-57

94 9538

26(1.014) min. 26(1.014) min.

ISO Method E

3.6 (0.140)max.

4.0 (0.156) max.

www.vishay.com

Document Number 86040

Rev. 1.6, 14-Apr-05

BYV26

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1

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Vishay

All product specifications and data are subject to change without notice.

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