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FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converters Features Description Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency through Zero Voltage Switching (ZVS) Internal UniFETTMs with Fast-Recovery Type Body Diode Fixed Dead Time (350ns) Optimized for MOSFETs Up to 300kHz Operating Frequency Auto-Restart Operation for All Protections with An External LVCC Protection Functions: Over-Voltage Protection (OVP), Over-Current Protection (OCP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) Applications PDP and LCD TVs Desktop PCs and Servers Adapters Telecom Power Supplies The FSFR-US series are a highly integrated power switches designed for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FSFRUS series simplifies designs and improves productivity, while improving performance. The FSFR-US series combines power MOSFETs with fast-recovery type body diodes, a high-side gate-drive circuit, an accurate current controlled oscillator, frequency limit circuit, soft-start, and built-in protection functions. The high-side gate-drive circuit has a common-mode noise cancellation capability, which guarantees stable operation with excellent noise immunity. The fast-recovery body diode of the MOSFETs improves reliability against abnormal operation conditions, while minimizing the effect of the reverse recovery. Using the zero-voltage-switching (ZVS) technique dramatically reduces the switching losses and efficiency is significantly improved. The ZVS also reduces the switching noise noticeably, which allows a small-sized Electromagnetic Interference (EMI) filter. The FSFR-US series can be applied to various resonant converter topologies such as series resonant, parallel resonant, and LLC resonant converters. Related Resources AN4151 -- Half-bridge LLC Resonant Converter Design TM using FSFR-Series Fairchild Power Switch (FPS ) Ordering Information Part Number Package Operating Junction Temperature FSFR2100US FSFR1800US 9-SIP FSFR1700US -40 to +130C FSFR2100USL FSFR1800USL 9-SIP L-Forming FSFR1700USL RDS(ON_MAX) Maximum Output Power without Heatsink (1,2) (VIN=350~400V) Maximum Output Power with Heatsink (1,2) (VIN=350~400V) 0.51 180W 400W 0.95 120W 260W 1.25 100W 200W 0.51 180W 400W 0.95 120W 260W 1.25 100W 200W Notes: 1. The junction temperature can limit the maximum output power. 2. Maximum practical continuous power in an open-frame design at 50C ambient. (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter May 2010 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Application Circuit Diagram Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter) Block Diagram Figure 2. Internal Block Diagram (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 2 Figure 3. Package Diagram Pin Definitions Pin # Name Description 1 VDL This is the drain of the high-side MOSFET, typically connected to the input DC link voltage. 2 AR This pin is for discharging the external soft-start capacitor when any protections are triggered. When the voltage of this pin drops to 0.2, all protections are reset and the controller starts to operate again. 3 RT This pin programs the switching frequency. Typically, an opto-coupler is connected to control the switching frequency for the output voltage regulation. 4 CS This pin senses the current flowing through the low-side MOSFET. Typically, negative voltage is applied on this pin. 5 SG This pin is the control ground. 6 PG 7 LVCC This pin is the power ground. This pin is connected to the source of the low-side MOSFET. 8 NC 9 HVCC This is the supply voltage of the high-side gate-drive circuit IC. 10 VCTR This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin. This pin is the supply voltage of the control IC. No connection. (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 3 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Pin Configuration Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified. Symbol VDS LVCC Parameter Min. Unit Maximum Drain-to-Source Voltage (VDL-VCTR and VCTR-PG) 500 Low-Side Supply Voltage -0.3 25.0 V -0.3 25.0 V -0.3 525.0 V HVCC to VCTR High-Side VCC Pin to Low-Side Drain Voltage HVCC Max. High-Side Floating Supply Voltage V VAR Auto-Restart Pin Input Voltage -0.3 LVCC V VCS Current Sense (CS) Pin Input Voltage -5.0 1.0 V VRT RT Pin Input Voltage -0.3 5.0 V 50 V/ns dVCTR/dt PD TJ TSTG Allowable Low-Side MOSFET Drain Voltage Slew Rate Total Power Dissipation (3) Maximum Junction Temperature FSFR2100US/L 12.0 FSFR1800US/L 11.7 FSFR1700US/L 11.6 (4) W +150 (4) Recommended Operating Junction Temperature -40 +130 Storage Temperature Range -55 +150 C C Notes: 3. Per MOSFET when both MOSFETs are conducting. 4. The maximum value of the recommended operating junction temperature is limited by thermal shutdown. (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 4 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Absolute Maximum Ratings Symbol Parameter Min. Max. Unit MOSFET Section VDGR Drain Gate Voltage (RGS=1M) VGS Gate Source (GND) Voltage IDM Drain Current Pulsed (5) 500 30 FSFR2100US/L 32 FSFR1800US/L 23 FSFR1700US/L 20 FSFR2100US/L ID Continuous Drain Current V FSFR1800US/L FSFR1700US/L TC=25C 10.5 TC=100C 6.5 TC=25C 7.0 TC=100C 4.5 TC=25C 6.0 TC=100C 3.9 V A A Package Section Torque Recommended Screw Torque 5~7 kgf*cm Notes: 5. Pulse width is limited by maximum junction temperature. Thermal Impedance TA=25C unless otherwise specified. Symbol JC Parameter Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting) (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 Value FSFR2100US/L 10.44 FSFR1800US/L 10.68 FSFR1700US/L 10.79 Unit C/W www.fairchildsemi.com 5 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Absolute Maximum Ratings (Continued) TA=25C unless otherwise specified. Specifications Symbol Parameter Test Conditions Unit Min. Typ. Max. MOSFET Section BVDSS RDS(ON) Drain-to-Source Breakdown Voltage 500 V 540 ID=200A, TA=125C FSFR2100US/L VGS=10V, ID=6.0A 0.41 0.51 On-State Resistance FSFR1800US/L VGS=10V, ID=3.0A 0.77 0.95 FSFR1700US/L VGS=10V, ID=2.0A 1.00 1.25 FSFR2100US/L trr ID=200A, TA=25C VGS=0V, IDiode=12.0A, dIDiode/dt=100A/s 120 Body Diode Reverse V =0V, IDiode=7.0A, FSFR1800US/L GS (6) Recovery Time dIDiode/dt=100A/s 160 VGS=0V, IDiode=6.0A, dIDiode/dt=100A/s 160 FSFR1700US/L ns Supply Section ILK Offset Supply Leakage Current H-VCC=VCTR=500V 50 A IQHVCC Quiescent HVCC Supply Current (HVCCUV+) - 0.1V 50 120 A IQLVCC Quiescent LVCC Supply Current (LVCCUV+) - 0.1V 100 200 A IOHVCC Operating HVCC Supply Current (RMS Value) fOSC=100KHz 6 9 mA No Switching 100 200 A IOLVCC Operating LVCC Supply Current (RMS Value) fOSC=100KHz 7 11 mA No Switching 2 4 mA UVLO Section LVCCUV+ LVCC Supply Under-Voltage Positive Going Threshold (LVCC Start) 11.2 12.5 13.8 V LVCCUV- LVCC Supply Under-Voltage Negative Going Threshold (LVCC Stop) 8.90 10.0 11.1 V LVCCUVH LVCC Supply Under-Voltage Hysteresis HVCCUV+ HVCC Supply Under-Voltage Positive Going Threshold (HVCC Start) 8.2 9.2 10.2 V HVCCUV- HVCC Supply Under-Voltage Negative Going Threshold (HVCC Stop) 7.8 8.7 9.6 V HVCCUVH HVCC Supply Under-Voltage Hysteresis (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 2.50 0.5 V V www.fairchildsemi.com 6 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Electrical Characteristics TA=25C unless otherwise specified. Specifications Symbol Parameter Unit Test Conditions Min Typ Max 1.5 2.0 2.5 V 94 100 106 KHz 48 50 52 % Oscillator & Feedback Section VRT V-I Converter Threshold Voltage fOSC Output Oscillation Frequency DC Output Duty Cycle fSS Internal Soft-Start Initial Frequency tSS Internal Soft-Start Time RT=5.2K fSS=fOSC+40kHz, RT=5.2K 140 KHz 2 3 4 ms Protection Section VCssH Beginning Voltage to Discharge CSS 0.9 1.0 1.1 V VCssL Beginning Voltage to Charge CSS and Restart 0.16 0.20 0.24 V VOVP LVCC Over-Voltage Protection L-VCC > 21V 21 23 25 V VAOCP AOCP Threshold Voltage V/t=-0.1V/s -1.0 -0.9 -0.8 V tBAO AOCP Blanking Time VCS < VAOCP; V/t=-0.1V/s VOCP OCP Threshold Voltage V/t=-1V/s (6) tBO OCP Blanking Time VCS < VOCP; V/t=-1V/s tDA Delay Time (Low Side) Detecting from VAOCP (6) to Switch Off V/t=-1V/s TSD Thermal Shutdown Temperature (6) (6) 50 ns -0.64 -0.58 -0.52 V 1.0 1.5 2.0 s 250 400 ns 135 150 C 120 Dead-Time Control Section DT (7) Dead Time 350 ns Notes: 6. This parameter, although guaranteed, is not tested in production. 7. These parameters, although guaranteed, are tested only in EDS (wafer test) process. (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 7 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Electrical Characteristics (Continued) 1.1 1.1 1.05 1.05 Normalized at 25OC Normalized at 25OC These characteristic graphs are normalized at TA=25C. 1 0.95 1 0.95 0.9 0.9 -50 -25 0 25 50 75 -50 100 -25 0 Temp (OC) 50 75 100 Figure 5. Switching Frequency vs. Temperature 1.1 1.1 1.05 1.05 Normalized at 25OC Normalized at 25OC Figure 4. Low-Side MOSFET Duty Cycle vs. Temperature 1 0.95 0.9 1 0.95 0.9 -50 -25 0 25 50 75 100 -50 -25 0 25 50 75 100 Temp (OC) Temp (OC) Figure 6. High-Side VCC (HVCC) Start vs. Temperature Figure 7. High-Side VCC (HVCC) Stop vs. Temperature 1.1 1.1 1.05 1.05 Normalized at 25OC Normalized at 25OC 25 Temp (OC) 1 0.95 1 0.95 0.9 0.9 -50 -25 0 25 50 75 -50 100 Figure 8. Low-Side VCC (LVCC) Start vs. Temperature (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 -25 0 25 50 75 100 Temp (OC) Temp (OC) Figure 9. Low-Side VCC (LVCC) Stop vs. Temperature www.fairchildsemi.com 8 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Typical Performance Characteristics 1.1 1.1 1.05 1.05 Normalized at 25OC Normalized at 25OC These characteristic graphs are normalized at TA=25C. 1 0.95 0.9 1 0.95 0.9 -50 -25 0 25 50 75 100 -50 -25 0 25 Temp (OC) Figure 10. LVCC OVP Voltage vs. Temperature 75 100 Figure 11. RT Voltage vs. Temperature 1.10 1.10 1.05 1.05 Normalized at 25 Normalized at 25 50 Temp (OC) 1.00 0.95 0.90 1.00 0.95 0.90 -50 -25 0 25 50 Temp() 75 -50 100 Figure 12. VCssL vs. Temperature -25 0 25 50 Temp() 75 100 Figure 13. VCssH vs. Temperature 1.1 Normalized at 25OC 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 Temp (OC) Figure 14. OCP Voltage vs. Temperature (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 9 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Typical Performance Characteristics (Continued) 1. Basic Operation: FSFR-US series is designed to drive high-side and low-side MOSFETs complementarily with 50% duty cycle. A fixed dead time of 350ns is introduced between consecutive transitions, as shown in Figure 15. Figure 15. MOSFETs Gate Drive Signal 2. Internal Oscillator: FSFR-US series employs a current-controlled oscillator, as shown in Figure 16. Internally, the voltage of RT pin is regulated at 2V and the charging / discharging current for the oscillator capacitor, CT, is obtained by copying the current flowing out of the RT pin (ICTC) using a current mirror. Therefore, the switching frequency increases as ICTC increases. FSFR-US Figure 17. Resonant Converter Typical Gain Curve Figure 16. Current Controlled Oscillator Figure 18. Frequency Control Circuit 3. Frequency Setting: Figure 17 shows the typical voltage gain curve of a resonant converter, where the gain is inversely proportional to the switching frequency in the ZVS region. The output voltage can be regulated by modulating the switching frequency. Figure 18 shows the typical circuit configuration for the RT pin, where the opto-coupler transistor is connected to the RT pin to modulate the switching frequency. To prevent excessive inrush current and overshoot of output voltage during startup, increase the voltage gain of the resonant converter progressively. Since the voltage gain of the resonant converter is inversely proportional to the switching frequency, the soft-start is implemented by sweeping down the switching frequency ISS from an initial high frequency (f ) until the output voltage is established. The soft-start circuit is made by connecting R-C series network on the RT pin, as shown in Figure 18. FSFR-US series also has an internal softstart for 3ms to reduce the current overshoot during the initial cycles, which adds 40kHz to the initial frequency of the external soft-start circuit, as shown in Figure 19. The initial frequency of the soft-start is given as: The minimum switching frequency is determined as: f min = 5.2k x 100(kHz) Rmin (1) Assuming the saturation voltage of opto-coupler transistor is 0.2V, the maximum switching frequency is determined as: f max 5.2 k 4.68k =( + ) x 100(kHz ) Rmin Rmax (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 f ISS = ( 5.2k 5.2k + ) x 100 + 40 (kHz ) Rmin RSS (3) (2) www.fairchildsemi.com 10 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Functional Description For the soft-start time, ts/s it can be set as Equation (4). (a ) The soft-start time is three to four times of the RC time constant. The RC time constant is as follows: = RSS * CSS (b ) ( a) (b ) (a ) (b ) L V CC V AR V C ssH V C ssL (4) ICr t stop tS /S (a ) P r o te ction s a r e tr igge r e d, ( b ) F S F R- U S r e sta r ts Figure 21. Self Auto-Restart Operation 5. Protection Circuits: The FSFR-US series has several self-protective functions, such as Over-Current Protection (OCP), Abnormal Over-Current Protection (AOCP), OverVoltage Protection (OVP), and Thermal Shutdown (TSD). These protections are auto-restart mode protections as shown in Figure 22. Figure 19. Frequency Sweeping of Soft-Start 4. Self Auto-Restart: The FSFR-US series can restart automatically even though any built-in protections are triggered with external supply voltage. As can be seen in Figure 20 and Figure 21, once any protections are triggered, M1 switch turns on and V-I converter is disabled. CSS starts to be discharged until VCss across CSS drops to VCssL. Then, all protections are reset, M1 turns off, and V-I converter resumes at the same time. The FSFR-US starts switching again with soft-start. If the protections occur while VCss is under VCssL and VCssH level, the switching is terminated immediately, VCss continues to increase until reaching VCssH, then CSS is discharged by M1. Once a fault condition is detected, switching is terminated and the MOSFETs remain off. When LVCC falls to the LVCC stop voltage of 10V or AR signal is HIGH, the protection is reset. The FSFR-US resumes normal operation when LVCC reaches the start voltage of 12.5V. Figure 22. Protection Blocks 5.1 Over-Current Protection (OCP): When the sensing pin voltage drops below -0.58V, OCP is triggered and the MOSFETs remain off. This protection has a shutdown time delay of 1.5s to prevent premature shutdown during startup. 5.2 Abnormal Over-Current Protection (AOCP): If the secondary rectifier diodes are shorted, large current with extremely high di/dt can flow through the MOSFET before OCP is triggered. AOCP is triggered without shutdown delay when the sensing pin voltage drops below -0.9V. Figure 20. Internal Block of AR Pin After protections trigger, FSFR-US is disabled during the stop-time, tstop, where VCss decreases and reaches to VCssL. The stop-time of FSFR-US can be estimated as: t STOP = CSS * {(RSS = RMIN ) || 5 k} (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 (5) www.fairchildsemi.com 11 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter It is typical to set the initial frequency of soft-start two to three times the resonant frequency (fO) of the resonant network. 7. PCB Layout Guidelines: Duty unbalance problems may occur due to the radiated noise from main transformer, the inequality of the secondary side leakage inductances of main transformer, and so on. Among them, it is one of the dominant reasons that the control components in the vicinity of RT pin are enclosed by the primary current flows pattern on PCB layout. The direction of the magnetic field on the components caused by the primary current flow is changed when the high-and low-side MOSFET turn on by turns. The magnetic fields with opposite directions induce a current through, into, or out of the RT pin, which makes the turn-on duration of each MOSFET different. It is strongly recommended to separate the control components in the vicinity of RT pin from the primary current flow pattern on PCB layout. Figure 25 shows an example for the duty-balanced case. 5.4 Thermal Shutdown (TSD): The MOSFETs and the control IC in one package makes it easy for the control IC to detect the abnormal over-temperature of the MOSFETs. If the temperature exceeds approximately 130C, the thermal shutdown triggers. 6. Current Sensing Using Resistor: FSFR-US series senses drain current as a negative voltage, as shown in Figure 23 and Figure 24. Half-wave sensing allows low power dissipation in the sensing resistor, while full-wave sensing has less switching noise in the sensing signal. Cr Np Ns Ns Control IC VCS Ids CS SG PG Rsense VCS Ids Figure 25. Example for Duty Balancing Figure 23. Half-Wave Sensing Ids VCS Cr Control IC VCS Np CS PG SG Rsense Ns Ns Ids Figure 24. Full-Wave Sensing (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 12 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter 5.3 Over-Voltage Protection (OVP): When the LVCC reaches 23V, OVP is triggered. This protection is used when auxiliary winding of the transformer to supply VCC to FPS is utilized. 26.20 25.80 3.4 0 3.0 0 23.10 22.90 (1.7 0) (1.2 0) (R0.5 0) 5.35 5.15 10 .70 10 .30 (1 1.0 0) 1 4.50 1 3.50 (0 .7 0) R0 .55 8.00 7.00 (0.5 0) 1 8.50 1 7.50 R0 .55 M AX 1.30 (7 .0 0) 1.3 0 1.1 0 (5 .0 8) 1 .27 0.60 0.40 MAX 0.80 0.7 0 0.5 0 3.4 8 2 .88 1 5.24 (R0.5 0) 3.4 0 3.0 0 N OTES: UNL ESS O THERW IS E S P ECIFIED A) THIS PACKAG E DO ES N OT COM PLY TO ANY CURRENT PACKAGIN G STAN DAR D. B) ALL DIM ENSIO NS ARE IN MIL LIMETERS. C) DIMENSIO NS ARE EXCLUSIVE OF BU R RS, MOL D FL ASH, AND TIE BAR EXT RUSIONS. SIPMO DAA0 9revA Figure 26. 9-SIP Package Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 13 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Physical Dimensions FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter Physical Dimensions Figure 27. 9-SIP L-Forming Package Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 14 FSFR-US Series -- Fairchild Power Switch (FPSTM) for Half-Bridge Resonant Converter (c) 2009 Fairchild Semiconductor Corporation FSFR-US Series * Rev.1.0.2 www.fairchildsemi.com 15 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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