1
.
9
0
.
9
5
0
.
9
5
1
.
0
2.
4
1.
3
2
.
9
0
.
4
S
O
T
-
23 Plast
i
c
-
E
nca
p
s
ulate
d
D
iodes
B
A
S16L
T1
S
W
IT
CHING
DIODE
F
EA
TURES
Pow
er
di
ssi
pation
P
D:
2
2
5
m
W
(
T
a
m
b
=
2
5
℃
)
For
w
ard
C
urrent
I
F:
2
0
0
m
A
Rev
ers
e
V
oltage
V
R
:
7
5
V
Op
erati
ng and
storag
e junct
ion tem
p
eratur
e range
T
J
, T
st
g
: -55
℃
to +150
℃
ELE
CTRICAL
CHARA
CTERI
STICS
(
T
a
mb=25
℃
unless o
therw
ise specif
ied)
P
a
r
a
m
e
t
e
r
S
y
m
b
o
l
T
e
s
t
c
o
n
d
i
t
i
o
n
s
M
I
N
M
A
X
U
N
I
T
Reverse brea
kdown v
oltage
V
(BR)
I
R
= 100
µ
A
75
V
Reverse
voltage
leakage
current
I
R
V
R
=75V
1
µ
A
For
ward
v
oltag
e
V
F
I
F
=1
mA
I
F
=10
mA
I
F
=50
mA
I
F
=150
mA
715
855
1000
1250
mV
Diode cap
acit
ance
C
D
V
R
=0V
, f=1M
Hz
2
pF
Reverse reco
very t
ime
t
r r
6
nS
U
n
i
t
:
m
m
SOT
-23
M
ar
k
i
n
g
A
6
M
ar
k
i
ng
A
6
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