©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
BC846- BC850 Rev. B
BC846- BC850 NPN Epit axial Silicon Transistor
tm
August 2006
BC846- BC850
NPN Epitaxial Silicon Transistor
Features
• Switching an d Amplifier Application s
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise note d
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC846
: BC847/850
: BC848/849
80
50
30
V
V
V
VCEO Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
65
45
30
V
V
V
VEBO Emitter-Base Voltage : BC846/847
: BC848/849/850 6
5V
V
ICCollector Current (DC) 100 mA
PCCollector Power Dissipation 310 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 110 800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 90
200 250
600 mV
mV
VBE (sat) Collector-Base Saturation Vo ltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 700
900 mV
mV
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA
VCE=5V, IC=10mA 580 660 700
720 mV
mV
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA,
f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6pF
Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9pF
NF Noise Figure
: BC846/847/848
: BC849/850 VCE= 5V, IC= 200µA
RG=2KΩ, f=1KHz 2
1.2 10
4dB
dB
: BC849
: BC850 VCE= 5V, IC= 200µA
RG=2KΩ, f=30~15000Hz 1.4
1.4 4
3dB
dB
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
2www.fairchildsemi.com
BC846- BC850 Rev. B
BC846- BC850 NPN Epit axial Silicon Transistor
hFE Classification
Ordering Information
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-T F” me a ns the ta pe & reel type pack ing .
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC846AMTF 8AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846BMTF 8AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846CMTF 8AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847AMTF 8BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847BMTF 8BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847CMTF 8BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848AMTF 8CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848BMTF 8CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848CMTF 8CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849AMTF 8DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849BMTF 8DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849CMTF 8DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850AMTF 8EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850BMTF 8EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850CMTF 8EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
3www.fairchildsemi.com
BC846- BC850 Rev. B
BC846- BC850 NPN Epit axial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Sat uration Voltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Prod uct
0 4 8 121620
0
20
40
60
80
100
IB = 50µA
IB = 100 µA
IB = 150 µA
IB = 200µA
IB = 250 µA
IB = 300 µA
IB = 350 µA
IB = 40 0µA
IC[mA], COLLECTOR CURRENT
VCE[V], CO L L E CTOR - E MIT T E R VOL T A GE
1 10 100 1000
10
100
1000
10000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.00.20.40.60.81.01.2
0.1
1
10
100
VCE = 2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
0.1
1
10
100
f=1MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE=5V
fT[MH z ], CURRENT G AIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
4www.fairchildsemi.com
BC846- BC850 Rev. B
BC846- BC850 NPN Epit axial Silicon Transistor
Mechanical Dimensions
0.96~1.14
0.12
0.03~0.1
0
0.38 RE
F
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.02
3
0.20 MI
N
0.40 ±0.03
SOT-23
Dimensions in Millimeters
TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
BC846- BC850 NPN Epit axial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OU T OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be re asonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a lat er date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet con tains final specificatio ns. Fairchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to i m prove design.
Obsolete Not In Production This datasheet contains specifications on a produc t
that has been discontinued by Fair child semiconductor.
The datasheet is printed for reference information only.
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BC846- BC850 Rev. B
BC846- BC850 NPN Epit axial Silicon Transistor
