1E4D10120A Rev. -, 07-2019
E4D10120A
Silicon Carbide Schottky Diode
E-Series Automotive
Features
4th Generation SiC Merged PIN Schottky Technology
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
AEC-Q101 Qualied and PPAP Capable
Humidity Resistant
Benets
Replace Bipolar with Unipolar Rectiers
Essentially No Switching Losses
Higher Efciency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Ideal for Outdoor Environments
Applications
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Automotive and Traction Power Conversion
PV Inverters
Package
TO-220-2
Part Number Package Marking
E4D10120A TO-220-2 E4D10120
V
DS
900 V
I
D
@
25˚C
11.5 A
R
DS(on)
280 m
Maximum Ratings (TC = 25 ˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 1200 V
VRDC Peak Reverse Voltage 1200 V
IFContinuous Forward Current
33
16
10
A
TC=25˚C
TC=135˚C
TC=156˚C
Fig. 3
Ptot Power Dissipation 166
72 WTC=25˚C
TC=110˚C Fig. 4
IFRM Repetitive Peak Forward Surge Current 44
26 ATC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
dV/dt
Diode dV/dt ruggedness 250 V/ns
VR=0-960V
TJ , Tstg Operating Junction and Storage Temperature -55 to
+175 ˚C
TO-220 Mounting Torque 1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
PIN 1
PIN 2
CASE
2E4D10120A Rev. -, 07-2019
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.5
2.2
1.8 VIF = 10 A TJ=25°C
IF = 10 A TJ=175°C Fig. 1
IRReverse Current 30
55
200 μA VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 56 nC
VR = 800 V, IF = 10A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
C Total Capacitance
777
51
44
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 17 μJ VR = 800 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 0.9 °C/W Fig. 8
Typical Performance
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
IF (A)
VF (V) VR (V)
IR (μA)
IF (A)
VF (V)
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward Current, I
F
(A)
Foward Voltage, VF(V)
T
J
= -55°C
T
J
= 25°C
T
J
= 75°C
T
J
= 175°C
T
J
= 125°C
IF (A)
VF (V)
0
100
200
300
400
500
600
0500 1000 1500 2000
Reverse Leakage Current, I
RR
(uA)
Reverse Voltage, VR(V)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 175 °C
TJ= 125 °C
IR (μA)
VR (V)
3E4D10120A Rev. -, 07-2019
Figure 3. Current Derating Figure 4. Power Derating
Typical Performance
Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
IF(peak) (A)
TC ˚C
C (pF)
VR (V)
Qc (nC)
VR (V)
0
20
40
60
80
100
120
25 50 75 100 125 150 175
I
F
(A)
TC(°C)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
IF(peak) (A)
TC ˚C
0
10
20
30
40
50
60
70
0200 400 600 800 1000
Capacitive Charge, QC(nC)
Reverse Voltage, VR(V)
Conditions:
TJ= 25 °C
Qc (nC)
VR (V)
0
100
200
300
400
500
600
700
800
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
C (pF)
VR (V)
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150 175
P
TOT (W)
T
C
C)
PTot (W)
TC ˚C
4E4D10120A Rev. -, 07-2019
Typical Performance
Figure 7. Typical Capacitance Stored Energy
Figure 8. Transient Thermal Impedance
0
5
10
15
20
25
0200 400 600 800 1000
Capacitance Stored Energy, E
C
(mJ)
Reverse Voltage, V
R
(V)
EC(mJ)
VR (V)
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5E4D10120A Rev. -, 07-2019
POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B .235 .255 5.969 6.477
C .100 .120 2.540 3.048
D .223 .337 5.664 8.560
D1 .457-.490 11.60-12.45 typ
D2 .277-.303 typ 7.04-7.70 typ
D3 .244-.252 typ 6.22-6.4 typ
E .590 .615 14.986 15.621
E1 .302 .326 7.68 8.28
E2 .227 251 5.77 6.37
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
L .025 .036 .635 .914
M .045 .055 1.143 1.550
N .195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S
T
U
V .094 .110 2.388 2.794
W .014 .025 .356 .635
X 5.5° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
PIN 1
PIN 2
CASE
Recommended Solder Pad Layout
Part Number Package Marking
E4D10120A TO-220-2 E4D10120
TO-220-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Package Dimensions
Package TO-220-2
66 E4D10120A Rev. -, 07-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh-
old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology.
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air trafc control systems.
Notes
Related Links
Wolfspeed E-Series Family: http//wolfspeed.com/E-Series
Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT+If*RT
VT = 1.00 + (TJ * -1.10*10-3)
RT = 0.03 + (TJ * 4.00*10-4)
Note: TJ = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C