FJPF3305 High Voltage Switch Mode Application * High Speed Switching * Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter * Ta = 25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 4 A ICP Collector Current (Pulse) 8 A IB Base Current 2 A PC Collector Dissipation (Ta = 25C) 30 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (c)2007 Fairchild Semiconductor Corporation FJPF3305 Rev. B 1 www.fairchildsemi.com FJPF3305 High Voltage Switch Mode Application May 2007 Symbol * TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdwon Voltage IC = 500A, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500A, IC = 0 9 V ICBO Collector Cut-off Current VCB = 700V, IE = 0 1 A IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 A hFE1 hFE2 DC Current Gain * VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A 0.5 0.6 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A 1.2 1.6 V V fT Current Gain Bandwidth Product VCE = 5V, IC = 1A Cob Output Capacitance VCB = 10V, f = 1MHz tON Turn On Time tSTG Storge Time tF Fall Time VCC = 125V IC = 2A = 5IB1 = -5IB2 RL = 62.5 19 8 35 40 4 MHz 65 pF 0.8 s 4.0 s 0.9 s * Pulse Test: PW 300s, Duty Cycle 2% hFE Classification Classification H1 H2 hFE2 19 ~ 28 26 ~ 35 2 FJPF3305 Rev. B www.fairchildsemi.com FJPF3305 High Voltage Switch Mode Application Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain (R-Grade) 5.0 100 VCE = 5V IC [A], COLLECTOR CURRENT 4.5 O 4.0 IB = 300mA hFE, DC CURRENT GAIN 3.0 2.5 IB = 100mA 2.0 1.5 Ta = 75 C O 3.5 IB = 50mA 1.0 Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 0.5 0.0 0 1 2 3 4 5 6 7 8 9 1 0.01 10 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. DC Current Gain (O-Grade) 10 VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O Ta = 75 C hFE, DC CURRENT GAIN Ta = 125 C O Ta = - 25 C O Ta = 25 C 10 1 0.01 0.1 1 IC = 4 IB O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 10 0.1 Figure 5. Saturatin Voltage (O-Grade) 10 Figure 6. Saturation Voltage (R-Grade) 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CUTRRENT O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.1 1 IC = 4 IB O 1 Ta = 25 C O Ta = - 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 10 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 3 FJPF3305 Rev. B 10 Figure 4. Saturation Voltage (R-Grade) 100 0.01 0.01 1 IC [A], COLLECTOR CUTRRENT www.fairchildsemi.com FJPF3305 High Voltage Switch Mode Application Typical Performance Characteristics (Continued) Figure 7. Saturation Voltage (O-Grade) Figure 8. Switching Time 10 10 tF & tSTG [s], SWITCHING TIME VCE(sat) [V], SATURATION VOLTAGE IC = 4 IB O O 1 Ta = - 25 C Ta = 25 C O Ta = 125 C O Ta = 75 C 0.1 0.01 0.01 0.1 1 tSTG 1 tF 0.1 IB1 = - IB2 = 0.4A VCC = 125V 0.01 0.1 10 1 IC [A], COLLECTOR CURRENT 10 IC [A], COLLECTOR CURRENT Figure 9. Reverse Biased Safe Operating Area Figure 10. Forward Biased Safe Operating Area 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 10 IB1=2A, RB2=0 1ms IC (Pulse) 10 500s 5ms IC (DC) 1 0.1 O TC = 25 C Single Pulse VCC=50V, L=1mH 0.01 1 10 100 1 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 11. Power Derating PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE 4 FJPF3305 Rev. B www.fairchildsemi.com FJPF3305 High Voltage Switch Mode Application Typical Performance Characteristics FJPF3305 High Voltage Switch Mode Application Mechanical Dimensions 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters 5 FJPF3305 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPMTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TCMTM The Power Franchise(R) TinyBoostTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only. Rev. I23 6 FJPF3305 Rev. B www.fairchildsemi.com FJPF3305 High Voltage Switch Mode Application TRADEMARKS