T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 1 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDL L variants
Availa ble on
commercial
versions
1 Amp Scho t t ky Barrier Rectifiers
Qualified per MIL-PRF-19500/586
Qualified Levels*:
JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade
qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability
applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF
glass package.
DO-213AB (MELF,
LL41) Package
Also available in:
DO-41 package
(axial-leaded)
1N5818-1, 1N5819-1,
1N6759-1 – 1N6761-1 and
DSB variants
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5818, 1N 5819 and 1N6761 numbers.
• Hermetically sealed DO-41 glass package.
• Metallurgically bonded.
• *1N5819UR-1 and 1N6761UR-1 only are available in JAN, JANTX, JANTXV and JANS qualifications
per MIL-PRF-19500/586.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Small size for high density mounting using flexible thru-hole leads (see pack age ill ustr atio n).
• Low reverse (leakage) currents.
• Non-sensitive to ESD per MIL-STD-750 test met hod 1020 (human body mode l).
• Inherently radiation hard as de scri bed in M icros emi “MicroNote 050”.
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise specified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: + 353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Storage Temperature
TSTG
-65 to +150
ºC
Junction Temperature 1N5819UR-1
1N6761UR-1
T
J
-65 to +125
-65 to +150
ºC
Thermal Resi stan ce, Jun cti on-to-Lead
R
ӨJEC
40
ºC/W
Thermal Resi stan ce, Jun cti on-to-Ambient
RӨJA
220
ºC/W
Average Rectified Output Current
@ TA = 55 ºC on PCB board
I
O
1.0
A
Surge Peak Forward Current
IFSM
25
A
Solder Temperature @ 10 s
260
oC
NOTE: 1. TEC = 55 ºC for the 1N5819UR-1 and TEC = 37 ºC for the 1N6761UR-1.
T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 2 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDL L variants
MECHANICAL and PACKAGING
• CASE: Hermetically sealed glass DO-213AB MELF (LL41) package.
• TERMINALS: Tin/lead or RoHS compliant matte-tin finished copper clad steel available (commercial grade only). Solderable per
MIL-STD-750, method 2026.
• MARKING: Cathode band.
• POLARITY: Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation.
• MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C. The
COE of the Mounting Surface System should be selected to provide a suitable match with this device.
• TAPE & REEL optional: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
• WEIGHT: Approximately 0.05 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
1N5818UR-1, 1N5819UR-1* and 1N6761UR-1*:
JAN 1N5819 UR -1 (e3)
Reliability Level
JAN = JAN leve l*
JANTX = JANTX level*
JANTXV = JANTXV level*
JANS = JANS level*
*(applicable onl y to 1N5819UR-1
and 1N6761UR-1 numbers)
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
MELF Surface Mount
CDLL6759 – CDLL6761:
CDLL 6759 (e3)
Microsemi Designation
Series number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
CDLL1A20 – CDLL1A100:
CDLL 1A 20 (e3)
Microsemi Designation
1 Amp Rating
20 Volt Working Peak
Reverse Voltage ( VRWM)
RoHS Compli ance
e3 = RoHS compliant
Blank = non-RoHS compliant
T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsem i Corporation Page 3 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDL L variants
SYMBOLS & DEFINITIONS
Symbol
Definition
CT
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
f
frequency
IFSM
Surge Peak Forward Current: The forward current including all nonrepetitive transient currents but excluding all
repetitive transients (ref JESD282-B)
IR
Reverse Current: The dc current flowing from the external circuit into the cathode term inal at the specified voltage VR.
IO
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave i nput
and a 180 degree conduction angle .
V
(BR)
Minimum Break down Voltage: The minimum voltage the device will exhibit at a specified curr ent.
VF Forward Voltage: The positive ano de-cathode voltage the device will exhibi t at a specified IF current.
VR
Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operati ng temperature range
excluding all transient voltages (ref JESD282-B). Also sometim es known as PIV.
*ELECTRIC AL CHARACTERISTICS @ TA = 25 °C unless otherwise specified
TYPE NUMBER
WORKING
PEAK
REVERSE
VOLTAGE (1)
MAXIMUM FORWARD
VOLTAGE MAXIMUM REVERSE
LEAKAGE CURRENT AT
RATED VOLTAGE
MAXIMUM
CAPACITANCE
@ VR = 5
VOLTS
f ≤ 1.0 MHz
VRWM
VF @ 0.1A
VF @ 1.0 A
IRM @ 25°C
IRM @ 100°C
CT
Volts
Volts
Volts
mA
mA
pF
1N5818UR-1*
30
0.36
0.60
0.10
5.0
0.9
†1N5819UR-1*
45
0.34
0.49
0.05
5.0
70
CDLL6759
60
0.38
0.69
0.10
6.0
NA
CDLL6760
80
0.38
0.69
0.10
6.0
NA
†1N6761UR-1*
100
0.38
0.69
0.10
12.0
70
CDLL1A20
20
0.36
0.60
0.10
5.0
0.9
CDLL1A30
30
0.36
0.60
0.10
5.0
0.9
CDLL1A40
40
0.36
0.60
0.10
5.0
0.9
CDLL1A50
50
0.36
0.60
0.10
5.0
0.9
CDLL1A60
60
0.38
0.69
0.10
12.0
NA
CDLL1A80
80
0.38
0.69
0.10
12.0
NA
CDLL1A100
100
0.38
0.69
0.10
12.0
NA
*Part number may also be ordered as CDLL5818 or CDLL5819 or CDLL6761.
† Also available with JAN, JAN TX, JANTXV, and JANS military qualifications.
T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsem i Corporation Page 4 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDL L variants
GRAPHS
TJ, Junction Temperature (ºC)
FIGURE 1
Typical Reverse Leakage Current at Rated PIV (PULSED)
VF, Forward Voltage, Instantaneous (Volts)
FIGURE 2
Typical Forward Voltage for 1N5819UR-1
I
R
, Reverse Current (mA)
IF, Forward Current, Instantaneous (Amps)
T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsem i Corporation Page 5 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDL L variants
GRAPHS (continued)
Time (s)
FIGURE 3
Thermal impedance for 1N5819UR-1 and 1N6761UR-1 (DO-213AB)
Theta (ºC/W)
T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsem i Corporation Page 6 of 6
1N5818UR-1, 1N5819UR-1, 1N6761UR-1
and CDL L variants
PACKAGE DIMENSIONS
Symbol
Dimensions
Inch
Millimeters
Min
Max
Min
Max
BD
0.094
0.105
2.39
2.67
BL
0.189
0.205
4.80
5.21
ECT
0.016
0.022
0.41
0.56
S
0.001 min
0.03 min
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Gap not controlled, shape of body and gap not controlled.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
Ltr
Inch
mm
A
0.276
7.00
B
0.070
1.8
C
0.110
2.8
