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©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.Awww.fairchildsemi.com
1
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous TA= 25°C (Note 1a) -8.8 A
-Pulsed -50
PD
Power Dissipation TA = 25°C (Note 1a) 2.5 W
Power Dissipation TA = 25°C (Note 1b) 1.0
EAS Single Pulse Avalanche Energy (Note 4) 24 mJ
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RTJC Thermal Resistance, Junction to Case 25 °C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
_F085 SO-8 13’’
G
S
S
S
D
D
D
D
Pin 1
SO-8
81
G
S
S
S
D
D
D
D
5
6
7
3
2
4
July 2009
Qualified to AEC Q101
FDS4435BZ FDS4435BZ 12mm 2500units
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = -250PA, referenced to 25°C -21 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 PA
IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 PA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -1 -2.1 -3 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250PA, referenced to 25°C 6 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -10V, ID = -8.8A 16 20
m:VGS = -4.5V, ID = -6.7A 26 35
VGS = -10V, ID = -8.8A, TJ = 125°C 22 28
gFS Forward Transconductance VDS = -5V, ID = -8.8A 24 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -15V, VGS = 0V,
f = 1MHz
1385 1845 pF
Coss Output Capacitance 275 365 pF
Crss Reverse Transfer Capacitance 230 345 pF
RgGate Resistance f = 1MHz 4.5 :
Switching Characteristics
td(on) Turn-On Delay Time
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6:
10 20 ns
trRise Time 612ns
td(off) Turn-Off Delay Time 30 48 ns
tfFall Time 12 22 ns
QgTotal Gate Charge VGS = 0V to -10V
VDD = -15V,
ID = -8.8A
28 40 nC
QgTotal Gate Charge VGS = 0V to -5V 16 23 nC
Qgs Gate to Source Charge 5.2 nC
Qgd Gate to Drain “Miller” Charge 7.4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS= -8.8A (Note 2) -0.9 -1.2 V
trr Reverse Recovery Time IF = -8.8A, di/dt = 100A/Ps29 44 ns
Qrr Reverse Recovery Charge 23 35 nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
a. 50°C/W when mounted on
a 1 in2pad of 2 oz copper. b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
3
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
01234
0
10
20
30
40
50
VGS = -5V
VGS = -4V
VGS = -10V
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 1020304050
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = -5V
VGS = -4V
VGS = -10V
VGS = -3.5V
VGS = -4.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -8.8A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
246810
10
20
30
40
50
60
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
ID= -8.8A
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R e s is ta nc e v s Ga te t o
Source Voltage
Figure 5. Transfer Characteristics
12345
0
10
20
30
40
50
VDS = -5V
TJ =-55oC
TJ= 25oC
TJ= 150oC
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0001
0.001
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ= 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r c e to Dr ai n Di o de
Forward Voltage vs Source Current
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
4
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Figure 7.
0 5 10 15 20 25 30
0
2
4
6
8
10
ID = -8.8A
VDD = -20V
VDD = -10V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
30
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10
1
10
TJ= 25oC
TJ= 125oC
tAV, TIME IN AVALANCHE(ms)
-IAS, AVALANCHE CURRENT(A)
30
20
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
0 5 10 15 20 25 30
10-9
10-8
10-7
10-6
10-5
10-4
TJ = 25oC
TJ= 125oC
VDS = 0V
-Ig,GATE LEAKAGE CURRENT(A)
-VGS,GATE TO SOURCE VOLTAGE(V)
Gate Leakage Current vs Gate to
Source Voltage
F i g u r e 1 1 . M a x i m u m C o n t i n u o u s D r a i n
Current vs Ambient Temperature
25 50 75 100 125 150
0
2
4
6
8
10
RTJA = 50oC/W
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Figure 12.
0.1 1 10
0.01
0.1
1
10
100
100us
SINGLE PULSE
TJ = MAX RATED
RTJA = 125oC/W
TA=25
oC
THIS AREA IS
LIMITED BY rDS(on)
80
10s
1ms
10ms
100ms
1s
DC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Sa fe
Operating Area
Typical Characteristics TJ = 25°C unless otherwise noted
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
5
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Figure 13. Single Pulse Maximum Power Dissipation
10
-4
10
-3
10
-2
10
-1
110
100 1000
1
10
100
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
V
GS
= -10 V SINGLE PULSE
R
T
JA
= 125
o
C/W
T
A
= 25
o
C
t, PULSE WIDTH (s)
0.5
Figure 14. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
R
T
JA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
T
JA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
www.fairchildsemi.com
FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
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