VUO62-12NO7
3~ Rectifier Bridge
Standard Rectifier Module
-
~ +~ ~
Part number
VUO62-12NO7
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
PWS-D
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
RRM
1200
I60
FSM
550
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO62-12NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.07
R1.1 K/W
R
min.
60
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
120
P
tot
110 WT = 25°C
C
RK/W0.4
20
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.30
T = 25°C
VJ
150
V
F0
V0.78T = °C
VJ
150
r
F
8.1 mΩ
V0.96T = °C
VJ
I = A
F
V
20
1.27
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
19
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
550
595
1.11
1.06
A
A
A
A
470
505
1.52
1.48
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO62-12NO7
Ratings
XXXX-XXXX YYCW Lot#
Made in Germany Circuit
Diagram
Product
Number
Date Code
Package
T
VJ
°C
M
D
Nm5.75
mounting torque 4.25
T
stg
°C125
storage temperature -40
Weight g159
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm5.75
terminal torque 4.25
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
9.5
26.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
PWS-D
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO62-12NO7 460451Box 10VUO62-12NO7Standard
2500
3000
ISOL
threshold voltage V0.78
mΩ
V
0 max
R
0 max
slope resistance * 6.9
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO62-12NO7
-
~ +~ ~
Outlines PWS-D
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO62-12NO7
011
100
1000
10000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
20
40
60
80
100
0.001 0.010 0.100 1.000
200
300
400
500
1 10 100 1000 10000
0.0
0.4
0.8
1.2
0 25 50 75 100 125 150 17501020
0
10
20
30
0 25 50 75 100 125 150
0
20
40
60
80
100
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.05 0.001
2 0.14 0.030
3 0.25 0.060
4 0.35 0.130
5 0.31 0.920
0.8 x V
RRM
50 Hz
T
VJ
=45°C T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=150°C
T
VJ
=150°C
T
VJ
=25°C
Graph 1*
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance
j
unction to case vs. time per diode
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
