DATA SH EET
Product data sheet
Supersedes data of 2003 Apr 10 2004 Aug 13
DISCRETE SEMICONDUCTORS
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
2004 Aug 13 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
FEATURES
•Built-in bias resistors
•Simplified circuit design
•Reduction of component count
•Reduced pick and place costs.
APPLICATIONS
•General purpose switc hing and amplification
•Inverter and interface c ir cu i ts
•Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped tran sistor (see “Simplified outline,
symbol and pinning” for pac kage details).
SYMBOL PARAMETER TYP. MAX. UNIT
VCEO collector-emitter
voltage −50 V
IOoutput curr en t (DC) −100 mA
R1 bias resistor 2.2 −kΩ
R2 bias resistor 47 −kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER PACKAGE MARKING CODE PNP COMPLEMENT
PHILIPS EIAJ
PDTC123JE SOT416 SC-75 28 PDTA123JE
PDTC123JEF SOT490 SC-89 28 PDTA123JEF
PDTC123JK SOT346 SC-59 49 PDTA123JK
PDTC123JM SOT883 SC-101 DW PDTA123JM
PDTC123JS SOT54 (TO-92) SC-43 TC123J PDTA123JS
PDTC123JT SOT23 −*25(1) PDTA123JT
PDTC123JU SOT323 SC-70 *49(1) PDTA123JU
2004 Aug 13 3
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING
PIN DESCRIPTION
PDTC123JS 1base
2collector
3emitter
PDTC123JE 1base
PDTC123JEF 2emitter
PDTC123JK 3collector
PDTC123JT
PDTC123JU
PDTC123JM 1base
2emitter
3collector
handbook, halfpage
MAM364
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB269
1
2
3
Top view
R1
R2
12
3
handbook, halfpage
MHC506
1
2
3
R1
R2
2
1
3
bottom view
2004 Aug 13 4
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTE RISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −50 V
VCEO collector-emitter voltage open base −50 V
VEBO emitter-base voltage open collector −10 V
VIinput voltage
positive −+12 V
negative − −5 V
IOoutput current (DC) −100 mA
ICM peak collector current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C
SOT54 note 1 −500 mW
SOT23 note 1 −250 mW
SOT346 note 1 −250 mW
SOT323 note 1 −200 mW
SOT416 notes 1 −150 mW
SOT490 notes 1 and 2 −250 mW
SOT883 notes 2 and 3 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
2004 Aug 13 5
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 50 V; IE = 0 −−100 nA
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 −−1μA
VCE = 30 V; IB = 0; Tj = 150 °C−−50 μA
IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−180 μA
hFE DC current gain VCE = 5 V; IC = 10 mA 100 − −
VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA −−100 mV
Vi(off) input-off voltage IC = 100 μA; VCE = 5 V −0.6 0.5 V
Vi(on) input-on voltage IC = 5 mA; VCE = 0.3 V 1.1 0.75 −V
R1 input resistor 1.54 2.2 2.86 kΩ
resistor ratio 17 21 26
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −−2.5 pF
R2
R1
--------
2004 Aug 13 6
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
PACKAGE OUTLINES
UNIT A1
max bpcDEe1HELpQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface-mounted package; 3 leads SOT41
6
04-11-04
06-03-16
2004 Aug 13 7
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
UNIT bpcDE e1HELpwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
05-07-28
06-03-16
IEC JEDEC JEITA
mm 0.33
0.23 0.2
0.1 1.7
1.5 0.95
0.75 0.5
e
1.0 1.7
1.5 0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490 SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
0.8
0.6
c
X
12
3
Plastic surface-mounted package; 3 leads SOT49
0
2004 Aug 13 8
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
UNIT A
1
b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.35 0.26
0.10 3.1
2.7 1.7
1.3 0.95
e
1.9 3.0
2.5 0.33
0.23 0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346 TO-236 SC-59A
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0 1 2 mm
scale
A
1.3
1.0 0.1
0.013
c
X
12
3
Plastic surface-mounted package; 3 leads SOT34
6
04-11-11
06-03-16
2004 Aug 13 9
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
UNIT A1
max.
A(1) bb
1e1
eLL
1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.20
0.12 0.55
0.47
0.03 0.62
0.55 0.35 0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883 SC-101 03-02-05
03-04-03
DE
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0 0.5 1 mm
scale
L
eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88
3
e
e1
2004 Aug 13 10
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1e
1
2
3
2004 Aug 13 11
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Aug 13 12
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT32
3
04-11-04
06-03-16
2004 Aug 13 13
NXP Semiconductors Pr oduct data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩPDTC123J series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
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not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reason ably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the la test version.
Printed in The Netherlands R75/05/pp14 Date of release: 2004 Aug 13 Document orde r number: 9397 750 13668
