ESH3D-E3/9AT - Vishay [General Semiconductor]

ESH3B, ESH3C, ESH3D

www.vishay.com Vishay General Semiconductor

Revision: 23-Mar-12 1Document Number: 84648

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ideal for automated placement

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power loss

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converter and inverter for

both consumer and automotive.

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 3.0 A

VRRM 100 V, 150 V, 200 V

trr 25 ns

VF0.90 V

TJ max. 175 °C

DO-214AB (SMC)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT

Device marking code EHB EHC EHD

Maximum repetitive peak reverse voltage VRMM 100 150 200

VMaximum RMS voltage VRMS 70 105 140

Maximum DC blocking voltage VDC 100 150 200

Maximum average forward rectified current (fig. 1) IF(AV) 3.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 125

Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C

ESH3B, ESH3C, ESH3D

www.vishay.com Vishay General Semiconductor

Revision: 23-Mar-12 2Document Number: 84648

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Note

(1) Units mounted on P.C.B. with 12.0 mm x 12.0 mm land areas

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Maximum instantaneous forward voltage IF = 3 A VF (1) 0.90 V

Maximum DC reverse current

at rated DC blocking voltage

TA = 25 °C IR

5.0 µA

TA = 125 °C 150

Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr 25

Typical reverse recovery time IF = 3 A, VR = 30 V,

dI/dt = 50 A/μs, Irr = 10 % IRM

TJ = 25 °C trr

TJ = 100 °C 55

Typical stored charge IF = 3 A, VR = 30 V,

dI/dt = 50 A/μs, Irr = 10 % IRM

TJ = 25 °C Qrr

25 nC

TJ = 100 °C 60

Typical junction capacitance 4.0 V, 1 MHz CJ 70 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL ESH3B ESH3C ESH3D UNIT

Typical thermal resistance RJA (1) 50 °C/W

RJL (1) 15

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

ESH3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel

ESH3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel

ESH3DHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel

ESH3DHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel

Lead Temperature (°C)

Average Forward Rectified Current (A)

0 25 50 75 100 125 150 175

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Peak Forward Surge Current (A)

Number of Cycles at 60 Hz

125

100

1 10 100

ESH3B, ESH3C, ESH3D

www.vishay.com Vishay General Semiconductor

Revision: 23-Mar-12 3Document Number: 84648

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.2 0.4 0.6 0.81.0 1.2

100

0.1

0.01

Instantaneous Forward Voltage (V)

TJ = 150 °C

TJ = 125 °C

TJ = 175 °C

TJ = 25 °C

Instantaneous Forward Current (A)

020406080 100

Percent of Rated Peak Reverse Voltage (%)

1000

100

0.1

0.01

= 150 °C

= 125 °C

= 175 °C

= 25 °C

Instantaneous Reverse Leakage

Current (µA)

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 1 10 100

1000

100

0.01 0.1 1 10 100

Transient Thermal Impedance (°C/W)

t - Pulse Duration (s)

Cathode Band

DO-214AB (SMC)

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

0.060 (1.52)

0.030 (0.76)

0.103 (2.62)

0.079 (2.06)

Mounting Pad Layout

0.126 (3.20) MIN.

0.060 (1.52) MIN.

0.185 (4.69) MAX.

0.320 (8.13) REF.

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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