Designed for General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL UNIT
Collector-Emitter Voltage VCEO V
Collector-Emitter Voltage VCER V
Collector-Base Voltage VCB V
Emitter-Base Voltage VEB V
Collector Current - Continuous ICA
Base Current IBA
Total Power Dissipation upto Tc=25º C PDW
Derate above 25º C W/ ºC
Operating And Storage Junction
Tj, Tstg
ºC
Temperature Range
THERMAL RESISTANCE
From Junction to case Rth (jc) ºC/W
From Junction to Ambient Rth (ja) ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-Emitter Sustaining Voltage VCEO(sus) *IC = 30 mA, IB = 0 60 V
Collector Cutoff Current ICER VCE=70V, RBE=100Ω1.0 mA
Collector Cutoff Current ICEO VCE = 30 V, IB =0 0.7 mA
Collector Cutoff Current ICEV VCE=100V, VBE(off) =1.5 V 5.0 mA
Emitter Cutoff Current IEBO VBE = 7.0 V, IC = 0 5.0 mA
DC Current Gain hFE *IC = 4.0 A, VCE = 4.0 V 20 70
IC = 10 A, VCE = 4.0 V 5.0
Collector-Emitter Saturation Voltage VCE(sat) *IC = 4.0 A, IB = 400 mA 1.1 V
IC = 10 A, IB = 3.3 A 3.0
Base-Emitter On Voltage VBE(on) *IC = 4.0 A, VCE = 4.0 V 1.8 V
Second Breakdown
Second Breakdown Collector Current IS / b VCE = 30 V, t = 1.0s, 3.0 A
with Base Forward Biased Nonrepetitive
0.72
- 65 to +150
1.39
35.7
7.0
15
7.0
90
VALUE
60
70
100
BC
Transys
Electronics
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