KBL005 thru KBL10
Vishay General Semiconductor
Document Number: 88655
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances applications.
MECHANICAL DATA
Case: KBL
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
e4
PRIMARY CHARACTERISTICS
IF(AV) 4 A
VRRM 50 V to 1000 V
IFSM 200 A
IR5 µA
VF1.1 V
TJ max. 150 °C
Case Style KBL
~
~
~~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBL005 KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward current at TA = 50 °C IF(AV) 4.0 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 200 A
Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS
SYMBOL
KBL005 KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNIT
Maximum instantaneous
forward drop per diode 4.0 A VF 1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
1.0
µA
mA
KBL005 thru KBL10
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88655
Revision: 15-Apr-08
2
Notes:
(1) Thermal resistance from junction to ambient with units mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate
(2) Thermal resistance from junction to lead with units mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL KBL005 KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNIT
Typical thermal resistance RθJA
RθJL
19 (1)
2.4 (2) °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
KBL06-E4/51 6.0 51 300 Anti-static PVC tray
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Tem
p
erature
(
°C
)
Average Forward Current (A)
0 50 100 150
0
1.0
2.0
3.0
4.0
P .C.B. Mounting
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
Heatsink Mounted
3.0" sq .x 0.06" Thickness
(7. 5x 0.15 cm) Copper Plate
110 100
25
50
75
100
125
150
175
200
TJ = 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.6 0.7
100
10
1
0.1
0.80.9 1.0 1.1 1.2 1.3
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 25 °C
KBL005 thru KBL10
Vishay General Semiconductor
Document Number: 88655
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Junction Capacitance Per Diode
0.1 110 100
0
50
100
150
200
250
Junction Capacitance (pF)
Reverse Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.210 (5.33)
0.190 (4.83)
0.768 (19.5)
0.726 (18.5)
0.091 (2.30)
0.077 (1.95)
0.591 (15.0)
0.567 (14.4)
1.1
(27.9)
MIN.
0.640 (16.3)
0.600 (15.2)
1.0
(25.4)
MIN.
0.256 (6.5)
0.236 (6.0)
Case Style KBL
0.052 (1.3) DIA.
0.048 (1.2) TYP.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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