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DATA SH EET
Product data sheet 2003 Aug 20
DISCRETE SEMICONDUCTORS
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
Very low VF MEGA Schottky barrier
rectifiers
ndb
ook, halfpage
M3D049
2003 Aug 20 2
NXP Semiconductors Product data sheet
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
FEATURES
•Very low forward voltage
•High surge current
•Very small plastic SMD package.
APPLICATIONS
•Low voltage rectification
•High efficiency DC/ DC conv ersion
•Voltage clamping
•Inverse polarity protection
•Low power cons ump tion applications.
DESCRIPTION
Planar Maximum Efficiency Ge neral Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
PINNING
PIN DESCRIPTION
1cathode
2anode
col
umns ka
MAM283
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
The marking bar indicates the cathode.
12
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
IFforward cu rr ent 0.5 A
VRreverse vo ltage
PMEG2005AEA 20 V
PMEG3005AEA 30 V
PMEG4005AEA 40 V
MARKING
RELATED PRODUCTS
TYPE NUMBER MARKING CODE
PMEG2005AEA E5
PMEG3005AEA E4
PMEG4005AEA E3
TYPE NUMBER DESCRIPTION FEATURE
PMEGxx05AEV 0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier SOT666 package
PMEG2005EB 0.5 A; 20 V very low VF MEGA Schottky rectifier smaller SOD523 (SC-79) package
PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier higher forward c urrent
2003 Aug 20 3
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
THERMAL CHARACTE RISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF(AV) rating will be available on request.
3. Device mounted o n an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point o f c athode tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous revers e voltage
PMEG2005AEA −20 V
PMEG3005AEA −30 V
PMEG4005AEA −40 V
IFcontinuous forward current note 1 −0.5 A
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5 −3.5 A
IFSM non-repetitive peak forward current tp = 8 ms; square wave −10 A
Tjjunction temperature note 2 −150 °C
Tamb operating ambient temperature note 2 −65 +150 °C
Tstg storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; note s 1 and 2 450 K/W
in free air; notes 2 and 3 210 K/W
Rth j-s thermal resistance from junction to
soldering point note 4 90 K/W
2003 Aug 20 4
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS PMEG2005AEA PMEG3005AEA PMEG4005AEA UNIT
TYP. MAX. TYP. MAX. TYP. MAX.
VFforward voltage IF = 0.1 mA 90 130 90 130 95 130 mV
IF = 1 mA 150 190 150 200 155 210 mV
IF = 10 mA 210 240 215 250 220 270 mV
IF = 100 mA 280 330 285 340 295 350 mV
IF = 500 mA 355 390 380 430 420 470 mV
IRcontinuous reverse
current VR = 10 V; note 1 15 40 12 30 720 μA
VR = 20 V; note 1 40 200 −−−−μA
VR = 30 V; note 1 − − 40 150 − − μA
VR = 40 V; note 1 −−−−30 100 μA
Cddiode capacitan c e VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF
2003 Aug 20 5
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
GRAPHICAL DATA
handbook, halfpage
0.60.40.2
103
102
1
10−1
MDB675
VF (V)
(1) (2) (3)
0
10
IF
(mA)
Fig.2 Forward current as a function of forward
voltage; typical values.
PMEG2005AEA
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
01051520
VR (V)
MDB676
10
5
10
4
10
3
10
2
10
1
IR
(μA)
(1)
(2)
(3)
Fig.3 Reverse current as a fun ction of reverse
voltage; typical values.
PMEG2005AEA
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
01051520
VR (V)
Cd
(pF)
0
150
100
50
MDB677
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
PMEG2005AEA
f = 1 MHz; Tamb = 25 °C.
2003 Aug 20 6
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
handbook, halfpage
0.60.40.2
103
102
1
10−1
MDB672
VF (V)
(1) (2) (3)
0
10
IF
(mA)
Fig.5 Forward current as a function of forward
voltage; typical values.
PMEG3005AEA
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
3020100
MDB673
10
5
10
4
10
3
10
2
10
1
IR
(μA)
VR (V)
(1)
(2)
(3)
Fig.6 Reverse current as a fun ction of reverse
voltage; typical values.
PMEG3005AEA
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0 5 10 20
120
0
40
80
15
MDB674
Cd
(pF)
VR (V)
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
PMEG3005AEA
f = 1 MHz; Tamb = 25 °C.
2003 Aug 20 7
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
handbook, halfpage
0.60.40.20
103
102
10
1
10−1
MDB669
IF
(mA)
VF (V)
(1) (2) (3)
Fig.8 Forward current as a function of forward
voltage; typical values.
PMEG4005AEA
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
02010 30 40
VR (V)
MDB670
10
5
10
4
10
3
10
2
10
1
IR
(μA)
(1)
(2)
(3)
Fig.9 Reverse current as a fun ction of reverse
voltage; typical values.
PMEG4005AEA
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0 5 10 20
100
0
80
15
60
40
20
MDB671
VR (V)
Cd
(pF)
Fig.10 Diode capacita nc e as a funct ion of rever se
voltage; typical values.
PMEG4005AEA
f = 1 MHz; Tamb = 25 °C.
2003 Aug 20 8
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD323 SC-76 98-09-14
99-09-13
0 1 2 mm
scale
SOD32
3
UNIT bpcDEQv
mm 0.40
0.25
+ 0.05
− 0.05 0.25
0.10 0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3 0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
12
HE
Lp
A
Ebp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
vMA
A
c
(1)
2003 Aug 20 9
NXP Semiconductors Pr oduct data shee t
Very low VF MEGA
Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document d oes not form part o f an y q uot ation or co nt ra ct, is believed to be accurate a nd reliable and may be change d
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/0 1/pp10 Date of release: 2003 Aug 20 Document orde r number: 9397 750 11615
