DSB60C30PB
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSB60C30PB
Backside: cathode
FAV
F
VV0.49
RRM
30
30
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSB60C30PB
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.55
R0.85 K/
W
R
min.
30
V
RSM
V
10T = 25°C
VJ
T = °C
VJ
m
A
80V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
145
W
T = 25°C
C
RK/
W
30
30
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
0.73
T = 25°C
VJ
100
V
F0
V
0.21T = °C
VJ
150
r
F
8.6 m
Ω
V
0.49T = °C
VJ
I = A
F
V
30
0.73
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
m
A
125
V
RRM
V
30
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
1.26
j
unction capacitance V = V5 T = 25°Cf = 1 MHz
RVJ
n
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
530
A
30
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
30
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSB60C30PB
preliminary
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
D
S
B
60
C
30
PB
Part number
Diode
Schottky Diode
ultra low VF
Common Cathode
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C150
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
125-55
TO-220
Similar Part Package Voltage class
DSB60C30HB TO-247AD (3) 30
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSB60C30PB 506854Tube 50DSB60C30PBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.21
mΩ
V
0 max
R
0 max
slope resistance * 5.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSB60C30PB
preliminary
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
1 2 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
