TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543 DEVICES LEVELS 2N6766 2N6766T1 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain - Source Voltage VDS 200 Vdc Gate - Source Voltage Continuous Drain Current VGS 20 Vdc ID1 30 Adc ID2 19 Adc Ptl 150 (1) W Rds(on) 0.085 (2) Top, Tstg -55 to +150 C TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation TC = +25C Drain to Source On State Resistance Operating & Storage Temperature 2N6766 TO-204AE (TO-3) Note: (1) Derated Linearly by 1.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 19A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 200V, Tj = +125C VGS = 0V, VDS = 160V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID2 = 19A pulsed VGS = 10V, ID1 = 30A pulsed Tj = +125C VGS = 10V, ID2 = 24A pulsed Diode Forward Voltage VGS = 0V, ID1 = 30A pulsed T4-LDS-0182 Rev. 1 (101484) Symbol Min. V(BR)DSS 200 VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Max. Unit Vdc 4.0 Vdc 2N6766T1 (TO-254AA) 5.0 IGSS1 IGSS2 100 200 nAdc IDSS1 IDSS2 IDSS3 25 1.0 0.25 Adc mAdc mAdc rDS(on)1 rDS(on)2 0.055 0.065 rDS(on)3 0.094 VSD 1.9 Vdc Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 30A VDS = 50V Min. Qg(on) Qgs Qgd Max. Unit 115 22 60 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 30A, VGS = 10Vdc, Gate drive impedance = 2.35, VDD = 50Vdc Diode Reverse Recovery Time di/dt 100A/s, VDD 30V, IF = 30A T4-LDS-0182 Rev. 1 (101484) Min. td(on) tr td(off) tf 35 190 170 130 trr 950 ns ns Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS T4-LDS-0182 Rev. 1 (101484) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS1 S Dimensions Inches Millimeters Min Max Min Max .875 22.23 .250 .360 6.35 9.15 .495 .525 12.57 13.3 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .057 .063 1.45 1.60 .038 .043 0.97 1.10 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 5 6 3 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. These dimensions pertain to the 2N6764 and 2N6766 types. 6. These dimensions pertain to the 2N6768 and 2N6770 types. 7. Mounting holes shall be deburred on the seating plane side. 8. Drain is electrically connected to the case. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE; for types 2N6768 and 2N6770, TO-204AA T4-LDS-0182 Rev. 1 (101484) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Ltr BL CH LD LL LO LS MHD MHO TL TT TW Term 1 Term 2 Term 3 Dimensions Inches Millimeters Min Max Min Max .535 .545 13.59 13.84 .249 .260 6.32 6.60 .035 .045 0.89 1.14 .510 .570 12.95 14.48 .150 BSC 3.81 BSC .150 BSC 3.81 BSC .139 .149 3.53 3.78 .665 .685 16.89 17.40 .790 .800 20.07 20.32 .040 .050 1.02 1.27 .535 .545 13.59 13.84 Drain Source Gate Notes 3, 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for 2N6764T1, 2N6766T1, 2N6768T1, and 2N6770T1 (TO-254AA). T4-LDS-0182 Rev. 1 (101484) Page 5 of 5