TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
T4-LDS-0182 Rev. 1 (101484) Page 1 of 5
DEVICES LEVELS
2N6766 2N6766T1 JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 200 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 30 Adc
Continuous Drain Current
T
C = +100°C ID2 19 Adc
Max. Power Dissipation
T
C = +25°C Ptl 150
(1) W
Drain to Source On State Resistance Rds(on) 0.085
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 19A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 200 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200 nAdc
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 200V, Tj = +125°C
VGS = 0V, VDS = 160V, T
j
= +125°C
IDSS1
IDSS2
IDSS3
25
1.0
0.25
µAdc
mAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID2 = 19A pulsed
VGS = 10V, ID1 = 30A pulsed
Tj = +125°C
VGS = 10V, ID2 = 24A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.055
0.065
0.094
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID1 = 30A pulsed VSD 1.9 Vdc
2N6766
TO-204AE (TO-3)
2N6766T1 (TO-254AA)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0182 Rev. 1 (101484) Page 2 of 5
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
Qg(on)
Qgs
Qgd
nC
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 30A
VDS = 50V
115
22
60
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 30A, VGS = 10Vdc,
Gate drive impedance = 2.35Ω,
VDD = 50Vdc
td(on)
tr
td(off)
tf
35
190
170
130
ns
Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 30A trr 950 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0182 Rev. 1 (101484) Page 3 of 5
PACKAGE DIMENSIONS
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0182 Rev. 1 (101484) Page 4 of 5
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. When
gauge is not used, measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a
.930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch
(0.15 mm) convex overall.
5. These dimensions pertain to the 2N6764 and 2N6766 types.
6. These dimensions pertain to the 2N6768 and 2N6770 types.
7. Mounting holes shall be deburred on the seating plane side.
8. Drain is electrically connected to the case.
9. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE;
for types 2N6768 and 2N6770, TO-204AA
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .875 22.23
CH .250 .360 6.35 9.15
HR .495 .525 12.57 13.3
HR1 .131 .188 3.33 4.78
HT .060 .135 1.52 3.43
LD .057 .063 1.45 1.60 5
.038 .043 0.97 1.10 6
LL .312 .500 7.92 12.70
L1 .050 1.27 3
MHD .151 .161 3.84 4.09 7
MHS 1.177 1.197 29.90 30.40
PS .420 .440 10.67 11.18
PS1 .205 .225 5.21 5.72
S .655 .675 16.64 17.15
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0182 Rev. 1 (101484) Page 5 of 5
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Protrusion thickness of ceramic eyelets included in dimension LL.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions for 2N6764T1, 2N6766T1, 2N6768T1, and 2N6770T1 (TO-254AA).
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
BL .535 .545 13.59 13.84
CH .249 .260 6.32 6.60
LD .035 .045 0.89 1.14
LL .510 .570 12.95 14.48
LO .150 BSC 3.81 BSC 3, 4
LS .150 BSC 3.81 BSC
MHD .139 .149 3.53 3.78
MHO .665 .685 16.89 17.40
TL .790 .800 20.07 20.32
TT .040 .050 1.02 1.27
TW .535 .545 13.59 13.84
Term 1 Drain
Term 2 Source
Term 3 Gate
