TPC8018-H
2006-11-16
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
Drain cutoff current IDSS V
DS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V
VGS = 4.5 V, ID = 9 A ⎯ 4.8 6.2
Drain-source ON-resistance RDS (ON)
VGS = 10 V, ID = 9 A ⎯ 3.5 4.6
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 25 50 ⎯ S
Input capacitance Ciss ⎯ 2265 ⎯
Reverse transfer capacitance Crss ⎯ 255 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 1045 ⎯
pF
Rise time tr ⎯ 5 ⎯
Turn-on time ton ⎯ 14 ⎯
Fall time tf ⎯ 11 ⎯
Switching time
Turn-off time toff
Duty
1%, tw = 10 µs ⎯ 50 ⎯
ns
VDD
24 V, VGS = 10 V, ID = 18 A ⎯ 38 ⎯
Total gate charge
(gate-source plus gate-drain) Qg
VDD
24 V, VGS = 5 V, ID = 18 A ⎯ 21 ⎯
Gate-source charge 1 Qgs1 ⎯ 7.3 ⎯
Gate-drain (“Miller”) charge Qgd ⎯ 9 ⎯
Gate switch charge QSW
VDD
24 V, VGS = 10 V, ID = 18 A
⎯ 12 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 72 A
Forward voltage (diode) VDSF I
DR = 18 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 1.67Ω
VDD
15 V
0 V
VGS 10 V
4.7 Ω
ID = 9 A
VOUT