FDS4465-F085
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of ON Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
•Power management
•Load switch
•Battery protection
Features
•–13.5 A, –20 V. R
DS(ON)
= 8.5 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 10.5 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 14 mΩ @ V
GS
= –1.8 V
•Fast switching speed
•High performance trench technology for extremely
low R
DS(ON)
•High current and power handling capability
D
DDD
S
SSG
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage ±8V
I
D
Drain Current – Continuous
(Note 1a)
–13.5 A
– Pulsed –50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
85 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125 °C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4465
FDS4465-F085
13’’ 12mm 2500 units
•Qualified to AEC Q101
•RoHS Compliant
FDS4465 -F085 P-Channel 1.8V Specified PowerTrench® MOSFET
©2012 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FDS4465-F085/D
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250 µA –20 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= –250 µA, Referenced to 25°C –12
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1 µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –8 V, V
DS
= 0 V –100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= –250 µA –0.4 –0.6 –1.5 V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C 3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –13.5 A
V
GS
= –2.5 V, I
D
= –12 A
V
GS
= –1.8 V, I
D
= –10.5 A
V
GS
=–4.5 V, I
D
=–13.5A, T
J
=125°C
6.7
8.0
9.8
9.0
8.5
10.5
14
13
mΩ
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –50 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –13.5 A 70 S
Dynamic Characteristics
C
iss
Input Capacitance 8237 pF
C
oss
Output Capacitance 1497 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
750 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 20 36 ns
t
r
Turn–On Rise Time 24 38 ns
t
d(off)
Turn–Off Delay Time 300 480 ns
t
f
Turn–Off Fall Time
V
DD
= –10V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6 Ω
140 224 ns
Q
g
Total Gate Charge 86 120 nC
Q
gs
Gate–Source Charge
20 nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V, I
D
= –13.5 A,
V
GS
= –4.5 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –2.1 A
V
SD
Drain–Source Diode Forward
Voltage V
GS
= 0 V, I
S
= –2.1 A
(Note 2)
–0.6 –1.2 V
Notes
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105 °C/W when
mounted on a 04 in
2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
FDS4465 -F085 P-Channel 1.8V Specified PowerTrench® MOSFET
Typical Characteristics
0
10
20
30
40
50
00.511.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
-2.5V
-2.0V
-1.8V -1.5V
0.6
1
1.4
1.8
2.2
2.6
3
0 1020304050
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -1.5V
-4.5V
-2.0V
-2.5V
-1.8V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -13.5A
V
GS
= -10V
0
0.005
0.01
0.015
0.02
0.025
012345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -6.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
00.511.52
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5.0V
0.0001
0.001
0.01
0.1
1
10
100
00
.20.40.60.811.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4465 -F085 P-Channel 1.8V Specified PowerTrench® MOSFET
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3
Typical Characteristics
0
1
2
3
4
5
0 20406080100
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -13.5A V
DS
= -5V
-10V
-15V
0
2000
4000
6000
8000
10000
0 5 10 15 20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θJA
= 125 C/W
T
A
= 25 C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0 001
0.01
0.1
1
0.0001 0.001 0 01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 125
o
C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4465-F085 P-Channel 1.8V Specified PowerTrench® MOSFET
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