AUIRL1404Z AUIRL1404ZS AUIRL1404ZL AUTOMOTIVE GRADE Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET 40V VDSS RDS(on) typ. 2.5m max. ID (Silicon Limited) 3.1m 180A ID (Package Limited) 160A D D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRL1404Z AUIRL1404ZL TO-220 TO-262 AUIRL1404ZS D2-Pak S S D G TO-220AB AUIRL1404Z G D2Pak AUIRL1404ZS G S D TO-262 AUIRL1404ZL G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRL1404Z AUIRL1404ZL AUIRL1404ZS AUIRL1404ZSTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 130 160 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 790 200 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient ( PCB Mount, steady state) Units 180 A W 1.3 16 190 490 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 175 C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.50 --- 0.75 --- 62 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRL1404Z/S/L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 40 --- --- --- --- 1.4 120 --- --- --- --- Typ. --- 0.034 2.5 --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.1 VGS = 10V, ID = 75A ** 4.7 m VGS = 5.0V, ID = 40A 5.9 VGS = 4.5V, ID = 40A 2.7 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 75A** 20 VDS = 40V, VGS = 0V A 250 VDS = 40V,VGS = 0V,TJ =125C 200 VGS = 16V nA -200 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 75 28 40 19 180 30 49 110 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Input Capacitance Output Capacitance --- 5080 --- --- 970 --- Crss Coss Coss Coss eff. Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- 570 --- --- 3310 --- --- 870 --- --- 1280 --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 75A** nC VDS = 32V VGS = 5.0V VDD = 20V ID = 75A** ns RG= 4.0 VGS = 5.0V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 32V = 1.0MHz VGS = 0V, VDS = 0V to 32V Min. Typ. Max. Units --- --- 180 --- --- 790 --- --- --- --- 26 18 1.3 39 27 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 75A**,VGS = 0V ns TJ = 25C ,IF = 75A** , VDD = 20V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 0.066mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population 100% tested to this value in production. This is only applied to TO-220AB package. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 TO-220Pak device will have an Rth value of 0.65C/W. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current l imitations arising from heating of the device leads may occur with some lead mounting arrangements. ** All AC and DC test conditions based on former package limited current of 75A. 2 2015-10-27 AUIRL1404Z/S/L 1000 1000 VGS 10V 7.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 3.0V 60s PULSE WIDTH Tj = 25C 1 0.1 1 10 BOTTOM 100 3.0V 10 60s PULSE WIDTH Tj = 175C 1 0.1 100 10 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 200 Gfs, Forward Transconductance (S) 1000 ID , Drain-to-Source Current ) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175C 100 10 T J = 25C VDS = 10V 60s PULSE WIDTH 1.0 2 3 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 10V 7.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V 10 T J = 25C 150 100 T J = 175C 50 V DS = 10V 0 0 50 100 150 200 ID ,Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance vs. Drain Current 2015-10-27 AUIRL1404Z/S/L 100000 6.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID = 75A C, Capacitance(pF) Coss = Cds + Cgd 10000 Ciss Coss 1000 Crss VDS = 32V VDS = 20V 5.0 4.0 3.0 2.0 1.0 0.0 100 1 10 0 100 20 40 60 80 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 T J = 175C 100.00 10.00 T J = 25C VGS = 0V 1.00 0.0 0.5 1.0 1.5 2.0 VSD , Source-to-Drain Voltage (V) 2.5 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10000 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100sec 100 1msec 10 Tc = 25C Tj = 175C Single Pulse 10msec 1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area 2015-10-27 AUIRL1404Z/S/L 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 200 Limited By Package ID, Drain Current (A) 150 100 50 ID = 75A VGS = 10V 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 0 175 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.001 J SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 Ri (C/W) i (sec) 0.212 0.000213 0.277 0.001234 0.261 0.021750 C 3 Ci= iRi Ci= iRi Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-27 AUIRL1404Z/S/L 15V DRIVER L VDS + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 800 D.U.T RG ID TOP 15A 24A BOTTOM 75A 700 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13a. Gate Charge Test Circuit Id Vds Vgs VGS(th) Gate threshold Voltage (V) 3.0 2.5 2.0 ID = 250A 1.5 1.0 0.5 Vgs(th) -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Qgs1 Qgs2 Qgd Qgodr Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Waveform 6 2015-10-27 AUIRL1404Z/S/L 100 Duty Cycle = Single Pulse Avalanche Current (A) 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.05 0.10 10 1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 75A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2015-10-27 AUIRL1404Z/S/L Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-10-27 AUIRL1404Z/S/L TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRL1404Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-27 AUIRL1404Z/S/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRL1404ZS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-27 AUIRL1404Z/S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRL1404ZL YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2015-10-27 AUIRL1404Z/S/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 2015-10-27 AUIRL1404Z/S/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220 Pak N/A D2-Pak MSL1 TO-262 Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Highest passing voltage. Class M4 (+/- 425V) AEC-Q101-002 Class H1C (+/- 2000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Revision History Date 10/27/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 13 2015-10-27