VS-8TQ080GSPbF, VS-8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * * PRODUCT SUMMARY 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range VALUES UNITS 8 A 80/100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-8TQ080GSPbF VS-8TQ100GSPbF UNITS 80 100 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 8 A Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.5 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current Document Number: 94264 Revision: 23-Mar-10 50 % duty cycle at TC = 157 C, rectangular waveform 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions, contact: diodestech@vishay.com 850 A 230 www.vishay.com 1 VS-8TQ080GSPbF, VS-8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 8A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 C 16 A 8A TJ = 125 C 16 A Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 C VR = Rated VR TJ = 125 C VALUES UNITS 0.72 0.88 V 0.58 0.69 0.28 mA 7 Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 500 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8.0 nH 10 000 V/s VALUES UNITS - 55 to 175 C Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Marking device www.vishay.com 2 C/W 0.50 2 Approximate weight Mounting torque 2 g 0.07 oz. minimum 6 (5) kgf * cm maximum 12 (10) (lbf * in) Case style D2PAK For technical questions, contact: diodestech@vishay.com 8TQ080GS 8TQ100GS Document Number: 94264 Revision: 23-Mar-10 VS-8TQ080GSPbF, VS-8TQ100GSPbF Schottky Rectifier, 8 A Vishay High Power Products 100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 175 C 100 TJ = 175 C TJ = 125 C TJ = 25 C 10 1 10 TJ = 150 C 1 TJ = 125 C 0.1 TJ = 100 C 0.01 TJ = 75 C TJ = 50 C 0.001 TJ = 25 C 0.1 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 10 20 30 40 50 60 70 80 90 100 110 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94264 Revision: 23-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-8TQ080GSPbF, VS-8TQ100GSPbF Schottky Rectifier, 8 A 180 7 175 6 170 Average Power Loss (W) Allowable Case Temperature (C) Vishay High Power Products DC 165 160 Square wave (D = 0.50) 80 % rated VR applied 155 150 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 5 RMS limit 4 3 DC 2 1 145 See note (1) 0 140 0 2 4 6 8 10 0 12 2 4 6 8 10 12 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94264 Revision: 23-Mar-10 VS-8TQ080GSPbF, VS-8TQ100GSPbF Schottky Rectifier, 8 A Vishay High Power Products ORDERING INFORMATION TABLE Device code VS- 8 T Q 100 G S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (8 = 8 A) 3 - T = TO-220 4 - Q = Schottky "Q" series 5 - Voltage ratings 6 - G = Schottky generation 7 - S = D2PAK 8 - TRL PbF 8 9 080 = 80 V 100 = 100 V None = Tube (50 pieces) TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95058 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95291 Document Number: 94264 Revision: 23-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000