Preliminary Technical Information TrenchT2TM Power MOSFET IXTA110N055T2 IXTP110N055T2 VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V 110 A 75 A 300 A ID25 TC = 25C ILRMS Lead Current Limit, RMS IDM TC = 25C, pulse width limited by TJM IAR TC = 25C 50 A EAS TC = 25C 400 mJ PD TC = 25C 180 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 260 C C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 = 55V = 110A 6.6m S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance 175C Operating Temperature High current handling capability ROHS Compliant High performance Trench Technology for extremely low RDS(on) Advantages Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V 200 nA 2 A 200 A TJ = 150C VGS = 10V, ID = 25A, Notes 1, 2 (c) 2008 IXYS CORPORATION, All rights reserved 5.5 6.6 m Easy to mount Space savings High power density Synchronous Applications Automotive Engine Control Synchronous Buck Converter (for notebook systempower & General purpose point & load.) DC/DC Converters High Current Switching Applications Power Train Management Distributed Power Architecture DS99955(02/08) IXTA110N055T2 IXTP110N055T2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 * ID25, Note 1 30 TO-263 (IXTA) Outline 49 S 3060 pF 497 pF 105 pF 18 ns 25 ns 40 ns tf 23 ns Qg(on) 57 nC 16 nC 11 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 30V, ID = 25A RG = 5 (External) VGS = 10V, VDS = 0.5 * VDSS, ID = 25A Qgd 0.82 C/W RthJC RthCH TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse width limited by TJM 300 A VSD IF = 25A, VGS = 0V, Note 1 1.0 V trr IF = 50A, VGS = 0V IRM -di/dt = 100A/s VR = 27V QRM 0.84 38 ns 2.4 A 46 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t 300s; duty cycle, d 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA110N055T2 IXTP110N055T2 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 110 350 VGS = 15V 10V 9V 8V 100 90 80 9V 250 70 ID - Amperes ID - Amperes VGS = 15V 10V 300 7V 60 50 40 6V 200 8V 7V 150 100 30 20 50 5V 10 6V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 110 6 7 8 2.2 VGS = 15V 10V 9V 8V 100 90 VGS = 10V 2.0 70 RDS(on) - Normalized 80 ID - Amperes 5 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150C 7V 60 50 6V 40 30 1.8 I D = 110A 1.6 I D = 55A 1.4 1.2 1.0 20 5V 0.8 10 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 175 90 3.0 VGS = 10V 15V - - - 2.8 2.6 External Lead Current Limit 80 TJ = 175C 70 2.4 2.2 ID - Amperes RDS(on) - Normalized 4 VDS - Volts VDS - Volts 2.0 1.8 1.6 60 50 40 30 1.4 1.2 20 1.0 TJ = 25C 0.8 10 0.6 0 0 50 100 150 200 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA110N055T2 IXTP110N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 70 TJ = - 40C 90 60 80 g f s - Siemens ID - Amperes 70 60 50 40 TJ = 150C 25C - 40C 30 50 25C 40 150C 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 Fig. 10. Gate Charge 300 10 270 9 240 8 210 7 VGS - Volts IS - Amperes 50 ID - Amperes 180 150 120 VDS = 28V I D = 55A I G = 10mA 6 5 4 3 90 TJ = 150C 60 2 TJ = 25C 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 5 10 15 VSD - Volts 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 f = 1 MHz Ciss RDS(on) Limit I D - Amperes Capacitance - PicoFarads 20 1,000 Coss 100 25s 100s 1ms 10 100 Crss TJ = 175C TJ = 25C Single Pulse 10 10ms 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VDS - Volts 100 IXTA110N055T2 IXTP110N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 26 27 RG = 5 26 TJ = 25C VGS = 10V 25 25 t r - Nanoseconds t r - Nanoseconds VDS = 30V 24 I 23 22 I D D = 50A RG = 5 24 VGS = 10V VDS = 30V 23 = 25A TJ = 125C 22 21 21 20 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 27 tr td(on) - - - - 27 23 I D = 50A, 25A 24 22 23 21 22 20 21 19 20 t f - Nanoseconds t r - Nanoseconds 25 7 8 9 10 11 12 13 14 25 45 I D = 25A, 50A 24 35 23 25 22 18 6 25 15 35 45 RG - Ohms 50 24.5 46 24.0 42 TJ = 125C 23.5 38 34 TJ = 25C 22.5 30 22.0 26 25 30 35 85 95 105 115 15 125 40 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 45 50 80 65 tf 60 TJ = 125C, VGS = 10V 75 70 55 VDS = 30V 65 td(off) - - - - 50 60 45 55 I D = 25A 40 50 I 35 D = 50A 45 30 40 25 35 20 30 15 25 5 6 7 8 9 10 11 RG - Ohms 12 13 14 15 t d(off) - Nanoseconds VDS = 30V t f - Nanoseconds 54 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 5, VGS = 10V 23.0 75 70 58 25.0 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 26.0 tf 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 25.5 55 RG = 5, VGS = 10V t d(off) - Nanoseconds 24 t d(on) - Nanoseconds 26 td(off) - - - - 26 25 VDS = 30V 5 50 65 tf 26 TJ = 125C, VGS = 10V 27 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 29 28 40 ID - Amperes IXTA110N055T2 IXTP110N055T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_110N055T2(V3)2-15-08