IXTA110N055T2 - Zilog

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C55 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ55 V

VGSM Transient ± 20 V

ID25 TC= 25°C 110 A

ILRMS Lead Current Limit, RMS 75 A

IDM TC= 25°C, pulse width limited by TJM 300 A

IAR TC= 25°C50 A

EAS TC= 25°C 400 mJ

PDTC= 25°C 180 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

Plastic body for 10 seconds 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 55 V

VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V

IGSS VGS = ± 20V, VDS = 0V ±200 nA

IDSS VDS = VDSS 2 μA

VGS = 0V TJ = 150°C 200 μA

RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 5.5 6.6 mΩ

TrenchT2TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA110N055T2

IXTP110N055T2

VDSS = 55V

ID25 = 110A

RDS(on) ≤≤

≤≤

≤ 6.6mΩΩ

ΩΩ

Ω

DS99955(02/08)

G = Gate D = Drain

S = Source TAB = Drain

TO-263 (IXTA)

GS

(TAB)

TO-220 (IXTP)

GDS(TAB)

Preliminary Technical Information

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

175°C Operating Temperature

High current handling capability

 ROHS Compliant

 High performance Trench

Technology for extremely low RDS(on)

Advantages

Easy to mount

Space savings

High power density

Synchronous

Applications

Automotive Engine Control

Synchronous Buck Converter

(for notebook systempower & General

purpose point & load.)

DC/DC Converters

High Current Switching Applications

Power Train Management

 Distributed Power Architecture

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA110N055T2

IXTP110N055T2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 49 S

Ciss 3060 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 497 pF

Crss 105 pF

td(on) 18 ns

tr 25 ns

td(off) 40 ns

tf 23 ns

Qg(on) 57 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 16 nC

Qgd 11 nC

RthJC 0.82 °C/W

RthCH TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

IS VGS = 0V 110 A

ISM Repetitive, Pulse width limited by TJM 300 A

VSD IF = 25A, VGS = 0V, Note 1 0.84 1.0 V

trr 38 ns

IRM 2.4 A

QRM 46 nC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 10V, VDS = 30V, ID = 25A

RG = 5Ω (External)

IF = 50A, VGS = 0V

-di/dt = 100A/μs

VR = 27V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXTA110N055T2

IXTP110N055T2

Fig. 1. Output Characteristics

@ 25º C

0

10

20

30

40

50

60

70

80

90

100

110

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

V

DS

- Volts

I

D

- A mp ere s

V

GS

= 15V

10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

012345678

V

DS

- Vo lts

I

D

- Am peres

V

GS

= 15V

10V

8V

5V

6V

7V

9V

Fig. 3. Output Characteristics

@ 150ºC

0

10

20

30

40

50

60

70

80

90

100

110

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

DS

- Volts

I

D

- Am peres

V

GS

= 15V

10V

9V

8V

7

V

5

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 55A Value

vs. Ju ncti o n Temper atu re

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- N ormaliz ed

V

GS

= 10V

I

D

= 110A

I

D

= 55A

Fig. 5. R

DS(on)

Normalized to I

D

= 55A Value

vs. Drain Current

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

0 50 100 150 200 250 300 350

I

D

- Amp eres

R

DS(on)

- N orm a lize d

V

GS

= 10V

15V - - - T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Am peres

Exter nal Lead Cur r ent Limit

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA110N055T2

IXTP110N055T2

Fig. 7. Input Admi ttance

0

10

20

30

40

50

60

70

80

90

100

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Am peres

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0

10

20

30

40

50

60

70

0 102030405060708090100

I

D

- Amperes

g

f s

- Siem ens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

30

60

90

120

150

180

210

240

270

300

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5

V

SD

- Volts

I

S

- A mp ere s

T

J

= 150ºC

T

J

= 25ºC

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Vo lt s

Capacitance - PicoFarads

f

= 1 MHz Ciss

Crss

Coss

Fi g . 12. F o r war d -B i as Safe Op er atin g Area

1

10

100

1,000

1 10 100

V

DS

- Volts

I D - Am p e res

R

DS(on)

Limit

25µs

1ms

100ms

10ms

100µs

T

J

=

175ºC

T

J

= 25ºC

Single Pulse

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40 45 50 55 60

Q

G

- NanoCoulombs

V

GS

- V o lts

V

DS

= 28V

I

D

= 55A

I

G

= 10mA

IXTA110N055T2

IXTP110N055T2

Fig . 14 . Resi st i ve Tur n-o n

Rise Time vs. D rai n Cu r ren t

21

22

23

24

25

26

25 30 35 40 45 50

ID - Amperes

t

r - Nano seconds

R

G

= 5Ω

V

GS

= 10V

V

DS

= 30V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 15. R esi sti ve Tur n -o n

Switch i n g Times vs. Gate R esistan ce

20

21

22

23

24

25

26

27

28

29

5 6 7 8 9 10 11 12 13 14 15

RG - Ohm s

t

r - Nanoseconds

18

19

20

21

22

23

24

25

26

27

t

d(on) - Na noseco nds

t

r

t

d(on) - - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 30V

I

D

= 50A, 25A

Fig. 16. Resistive T urn-off

Switching Ti mes vs. Ju n cti o n Temper atu r e

22

23

24

25

26

27

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

f - N an ose con ds

15

25

35

45

55

65

t

d(off)

- N an ose con d s

t

f

t

d(off) - - -

-

R

G

= 5Ω, V

GS

= 10V

I

D

= 25A, 50A

Fi g . 17. R e si stive Tur n -off

Switch i ng Times vs. D r ai n C u r r en t

22.0

22.5

23.0

23.5

24.0

24.5

25.0

25.5

26.0

25 30 35 40 45 50

ID - A mperes

t

f - Nanoseconds

26

30

34

38

42

46

50

54

58

t

d(off) - N ano se con d s

t

f

t

d(off) - - - -

R

G

= 5Ω, V

GS

= 10V

V

DS

= 30V

T

J

= 125ºC

T

J

= 25ºC

Fig. 13. Resistive Turn-on

Ri s e Ti me vs . Jun cti o n Temper at ur e

20

21

22

23

24

25

26

27

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

r - N an o se co nd s

R

G

= 5Ω

V

GS

= 10V

V

DS

= 30V

I

D

= 25A

I

D

= 50A

Fi g . 18. R esi sti ve Tur n -o ff

Switch i ng Times vs. Gate Resi stan ce

15

20

25

30

35

40

45

50

55

60

65

70

5 6 7 8 9 10 11 12 13 14 15

RG - Oh ms

t

f - N an ose co nd s

25

30

35

40

45

50

55

60

65

70

75

80

t

d(off)

- Nanoseconds

t

f

t

d(off) - - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 30V

I

D

= 50A

I

D

= 25A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA110N055T2

IXTP110N055T2

IXYS REF: T_110N055T2(V3)2-15-08

Fi g . 19. Maximum Tran si en t Ther mal Imp edan ce

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W