© 2004 IXYS All rights reserved
Features
•International standard package
•miniBLOC, with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
•Linear current regulators
Advantages
•Easy to mount
•Space savings
•High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 70 V
VGH(th) VDS = V GS, ID = 8 mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 μA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 100A 4 mΩ
Pulse test, t ≤ 300 μs,
duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C70V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ70 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C, Chip capability 3 4 0 A
IL(RMS) Terminal current limit 100 A
IDM TC = 25°C, pulse width limited by TJM 1360 A
IAR TC = 25°C 200 A
EAR TC = 25°C64mJ
EAS TC = 25°C4J
dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 700 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
DS98547D(05/04)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 340N07 VDSS = 70 V
ID25 = 340 A
RDS(on) = 4 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 200 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 340N07
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 60A, pulse test 80 98 S
Ciss 12200 pF
Coss VGS = 0 V, VDS = 2 5 V, f = 1 M Hz 7100 p F
Crss 3340 pF
td(on) 100 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 100A 95 ns
td(off) RG= 1 Ω (External) 2 00 ns
tf33 ns
Qg(on) 490 nC
Qgs VGS = 10 V, VDS = 50 V, ID = 100A 72 nC
Qgd 266 nC
RthJC 0.18 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 340 A
ISM Repetitive; 1360 A
pulse width limited by TJM
VSD IF = 100A, VGS = 0 V, 1.2 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 50A, -di/dt = 100 A/μs, VR = 50V TJ =25°C 100 200 ns
QRM 1.4 μC
IRM 8A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 B1 6,534,343 6,683,344
one or moreof the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 B1 6,404,065 B1 6,583,505 6,710,405B2
© 2004 IXYS All rights reserved
IXFN 340N07
Fig. 2. Output Cha racteri stics
@ 125 Deg . C
0
40
80
120
160
200
240
0 0.4 0.8 1.2 1.6 2
V
DS
- Vo l ts
I
D
- Am p eres
V
GS
=10V
9V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
40
80
120
160
200
240
0 0.3 0.6 0.9 1.2 1.5
V
DS
- Volts
I
D
- Amperes
V
GS
=10V
9V
8V
7V
5V
6V
Fig. 3. Tem perature De pendence of
R
DS(ON)
2
2.5
3
3.5
4
4.5
5
5.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(O N) -
Ohm
I
D
=200A
I
D
=100A
Fig. 4. R
DS(ON)
Norma liz ed to I
L(RMS)
Val ue vs. Juncti on Te m pera ture
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(ON)
- Normalized
I
D
=200A
I
D
=100A
Fig. 6. Tem perature dependence of
Bre akdow n & Threshol d V ol tage
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Deg rees Cen t ig rade
BV
DSS
& V
GS(TH)
- Normal i zed
V
GS(TH)
BV
DSS
Fig. 5. RDS(ON) Norma lize d to IL(RMS)
Va lue vs. ID
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0 50 100 150 200 250
I
D
- Amp eres
R
DS(ON)
- Normal i zed
T
J
=125
°
C
T
J
=25
°
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 340N07
F i g . 9. Sou rce Cu rr en t vs. So u rce-T o -
Drain Voltage
-240
-200
-160
-120
-80
-40
0-1-0.9-0.8-0.7-0.6-0.5-0.4
V
SD
- Vol ts
I
S
- Amperes
T
J
=125
°
C
T
J
=25
°
C
Fig. 11. Ca pacitance
1000
10000
100000
0 10203040
V
DS
- Vo lts
Capaci tance - p F
Ciss
Coss
Crss
f=100kHz
Fi g. 10. Ga te Cha rge
0
2
4
6
8
10
0 100 200 300 400 500
Q
G
- nanoCoulombs
V
GS
- Volts
V
DS
=50V
I
D
=100A
I
G
=10mA
Fig. 7. I nput Adm itta nce
0
50
100
150
200
250
2.533.544.555.56
V
GS
- Volts
I
D
- Amperes
T
J
= -40
°
C
25
°
C
125
°
C
Fi g. 12. Transient Therm al Re si stance
0.001
0.01
0.1
1
1 10 100 1000
Pul se Wi d th - milli seco nd s
R
(TH )JC -
(ºC/W)
Fi g. 8. Tra nsconductance
0
30
60
90
120
150
180
0 40 80 120 160 200 240
I
D
- A mperes
G
FS
- S i emens
T
J
=25
°
© 2004 IXYS All rights reserved
IXFN 340N07
Fig. 13. Forward-Bi as S afe
Operating Area
10
100
1,000
10,000
1 10 100
VD S - Vol ts
I D - Amperes
100µs
10ms
DC
1ms
RDS(on) Limit
TC = 25ºC
TJ = 150ºC
