INTERSIL 2N5911, 2N5912 T5911, I1T5912 Dual Monolithic FEATURES N-Channel JFET . Oo @ Tracking < 20 uV/-C PIN CHIP gf, < 5000 ymho, 0-100 MHz CONFIGURATION TOPOGRAPHY @ Matched Vig, AV GG/AT, ley tgs TO-98 To-74 L.. 0220 I 6022 0260 ~ , 087 , 0087 t s>4 1 9027 "0027 0190 o,4 {P. 2 PLACES} 0230 Go Dy oa ey i ABSOLUTE MAXIMUM RATINGS ; | 027" 0027 Q @ 25 C (unless otherwise noted} . 8, 0037 9037 (0027 * 0027 Gate-Drain or Gate-Source Voltage -25V (TYP. 2 PLACES! Gate Current 50mA Device Dissipation (Each Side), 367 mW Spl] 2] G2 Linear Derating 3mw/C c & oS Sp a a Total Device Dissipation, 500 mW om Linear Derating 4 mw/C Storage Temperature Range -65C to +200C ORDERING INFORMATION TO-71 TO-99 WAFER DICE T5911 2N5911 2N5911/W 2N5911/D IT5912 2N5912 2N5912/W | 2N5912/D ELECTRICAL CHARACTERISTICS (26C unless otherwise noted) PARAMETER MIN MAX | UNIT TEST CONDITIONS -100 pA = -18V. Vins = IGss Gate Reverse Current T2250 nA Vos 7-15 V,Vps=0 150C BVGSsS Gate Reverse Breakdown Voltage -25 Ig =-1 pA, Vpsg =0 VGSloff) Gate-Source Cutoff Voltage -1 -5 Vv Vps=10V,ip=1nA V6s Gate-Source Voltage ~0.3 ~4 . -100 pA VpG=10V.iIp=5mA Ig Gate Operating Current -100 nA 126C Saturation Drain Current (Pulsewidth 300 ps 4 = = Ipss duty cycle < 3%) 7 O mA Vps=10V,VGs=OV Sts Common-Source Forward Transconductance 5000 | 10,000 t= 1kHz Ofs Common-Source Forward Transconductance 5000 | 10,000 mho f= 100 MHz Sos Common-Source Output Conductance 100 Hu f= 1 kHz Joss Common-Source Output Conductance 150 f = 100 MHz Ciss Common-Source Input Capacitance 5 F VpG=10V,Ip=5mA f=1MHz Crss Common-Source Reverse Transfer Capacitance 1.2 P . - : we . nv. _ n Equivalent Short Circuit Input Noise Voitage 20 Jie f= 10 kHz . . f=10kHz - NF Spot Noise Figure 1 dB Rg = 100KQ IT, 2N5911 | IT,:2N5912 PARAMETER iin [MAX] MIN TMAX UNIT TEST CONDITIONS llG1-leal Differential Gate Current 20 20 nA VpG =10V,Ip =5mA { 125C 'pss1 ; : 7 Vps = 10 V, Vgg =0 Toss2 Saturation Drain Current Ratio 0.95 1 )0.95 1 (Pulsewidth 300 us, duty cycle < 3%) IVGs1-VGsal __ Differential Gate-Source Voltage 10 15 mV : Taz 25C Gate-Source Voltage Differential 20 40 AlVGs1-V = 126 Alvgst-Vas2! Drift (Measured at end points, uVvieC Vng =10V.Ip=5 mA ee Ta and Tp) 20 40 DG iD Ten2sc | Sfs1 . o2 Transconductance Ratio 0.95 1 | 0.95 1 f= 1 kHz $ : en