PBSS4350X,147 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Nov 21 2004 Nov 04

DISCRETE SEMICONDUCTORS

PBSS4350X

50 V, 3 A

NPN low VCEsat (BISS) transistor

ook, halfpage

M3D109

2004 Nov 04 2

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

FEATURES

•SOT89 (SC-62) package

•Low collector-emitter saturation voltage VCEsat

•High collector current capability: IC and ICM

•Higher efficiency leading to less heat generation

•Reduced printed-circuit board requirements.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral drivers

– Driver in low supply voltage applications (e.g. lamps

and LEDs).

– Inductive load driver (e.g. relays,

buzzers and motors).

DESCRIPTION

NPN low VCEsat transistor in a SOT89 plastic package.

PNP complement: PBSS5350X.

MARKING

TYPE NUMBER MARKING CODE

PBSS4350X S43

PINNING

PIN DESCRIPTION

1 emitter

2 collector

3 base

321

sym042

Fig.1 Simplified outline (SOT89) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 50 V

ICcollector current (DC) 3 A

ICM peak collector current 5 A

RCEsat equivalent on-resistance 130 mΩ

2004 Nov 04 3

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.

4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4350X SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −50 V

VCEO collector-emitter voltage open base −50 V

VEBO emitter-base voltage open collector −5V

ICcollector current (DC) note 4 −3A

ICM peak collector current limited by Tj(max) −5A

IBbase current (DC) −0.5 A

Ptot total power dissipation Tamb ≤25 °C

note 1 −550 mW

note 2 −1W

note 3 −1.4 W

note 4 −1.6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Nov 04 4

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

handbook, halfpage

0 40 80 160

Ptot

(W) (1)

(2)

(3)

1.6

120

1.2

0.8

0.4

MLE186

Tamb (°C)

(4)

Fig.2 Power derating curves.

(1) Ceramic PCB; 7 cm2

mounting pad for collector.

(2) FR4 PCB; 6 cm2 copper

mounting pad for collector.

(3) FR4 PCB; 1 cm2 copper

mounting pad for collector.

(4) Standard footprint.

2004 Nov 04 5

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.

4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air

note 1 225 K/W

note 2 125 K/W

note 3 90 K/W

note 4 80 K/W

Rth(j-s) thermal resistance from junction to soldering point 16 K/W

006aaa243

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(1)

(6)

(7)

(8)

(9)

(10)

(5)

(2)

(3) (4)

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; standard footprint.

2004 Nov 04 6

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

006aaa244

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(1)

(5)

(6)

(7)

(8)

(10)

(2)

(3) (4)

(9)

Fig.4 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

006aaa245

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(1)

(5)

(6)

(7)

(8)

(10)

(9)

(4)

(3) (2)

Fig.5 Transient thermal impedance as a function of pulse time; typical values.

(1) δ=1.

(2) δ= 0.75. (3) δ= 0.5.

(4) δ= 0.33. (5) δ= 0.2.

(6) δ= 0.1. (7) δ= 0.05.

(8) δ= 0.02. (9) δ= 0.01.

(10) δ=0.

Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.

2004 Nov 04 7

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 50 V; IE=0A −−100 nA

VCB = 50 V; IE= 0 A; Tj= 150 °C−−50 µA

ICES collector-emitter cut-off current VCE = 50 V; VBE =0V −−100 nA

IEBO emitter-base cut-off current VEB =5V; I

C=0A −−100 nA

hFE DC current gain VCE =2V

IC= 0.1 A 300 −−

IC= 0.5 A 300 −−

IC= 1 A; note 1 300 −700

IC= 2 A; note 1 200 −−

IC= 3 A; note 1 100 −−

VCEsat collector-emitter saturation

voltage IC= 0.5 A; IB=50mA −−80 mV

IC= 1 A; IB=50mA −−160 mV

IC= 2 A; IB= 100 mA −−280 mV

IC= 2 A; IB= 200 mA; note 1 −−260 mV

IC= 3 A; IB= 300 mA; note 1 −−370 mV

RCEsat equivalent on-resistance IC= 2 A; IB= 200 mA; note 1 −100 130 mΩ

VBEsat base-emitter saturation voltage IC= 2 A; IB= 100 mA −−1.1 V

IC= 3 A; IB= 300 mA; note 1 −−1.2 V

VBEon base-emitter turn-on voltage VCE =2V; I

C=1A 1.1 −−V

fTtransition frequency IC= 100 mA; VCE = 5 V; f = 100 MHz 100 −−MHz

Cccollector capacitance VCB = 10 V; IE=i

e= 0 A; f = 1 MHz −−25 pF

2004 Nov 04 8

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

handbook, halfpage

800

200

400

600

MLE181

10−11IC (mA)

hFE

10 102103104

(1)

(2)

(3)

Fig.6 DC current gain as a function of collector

current; typical values.

VCE =2V.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MLE180

1.2

0.4

0.8

10−1110 IC (mA)

VBE

(V)

102103104

(1)

(3)

(2)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE =2V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 100 °C.

handbook, halfpage

MLE183

10−1

10−2

10−3

10−1110 IC (mA)

VCEsat

(V)

102103104

(3)

(1)

(2)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 100 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MLE184

10−1

10−2

10−3

10−1110 IC (mA)

VCEsat

(V)

102103104

(3)

(1)

(2)

Fig.9 Collector-emitter saturation voltage as a

function of collector current; typical values.

Tamb =25°C.

(1) IC/IB= 100.

(2) IC/IB= 50.

(3) IC/IB= 10.

2004 Nov 04 9

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

handbook, halfpage

MLE185

0.2

1.4

0.6

10−1110 IC (mA)

VBEsat

(V)

102103104

(3)

(1)

(2)

Fig.10 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb =−55 °C. (2) Tamb =25°C. (3) Tamb = 100 °C.

handbook, halfpage

103

102

10−2

10−1

MLE182

10−1110 IC (mA)

RCEsat

(Ω)

103

102104

(1)

(3)

(2)

Fig.11 Equivalent on-resistance as a function of

collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C. (2) Tamb =25°C. (3) Tamb =−55 °C.

handbook, halfpage

(1)

(mA)

VCE (V)

1200

800

400

00.4 2

0.8 1.2 1.6

MLE178

(9)

(10)

(7)

(5)

(4)

(3)

(2)

(6)

(8)

Fig.12 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB= 2600 µA.

(2) IB= 2340 µA.

(3) IB= 2080 µA.

(4) IB= 1820 µA.

(5) IB= 1560 µA.

(6) IB= 1300 µA.

(7) IB= 1040 µA.

(8) IB= 780 µA.

(9) IB= 520 µA.

(10) IB= 260 µA.

Tamb =25°C.

handbook, halfpage

0.4 VCE (V)

(A)

0.8 1.2 1.6

MLE179

(1)

(8)

(9)

(10)

(2)(3)

(4)(5)(6)

(7)

Fig.13 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB= 120 mA.

(2) IB= 108 mA.

(3) IB= 96 mA.

(4) IB= 84 mA.

(5) IB= 72 mA.

(6) IB= 60 mA.

(7) IB= 48 mA.

(8) IB= 36 mA.

(9) IB= 24 mA.

(10) IB= 12 mA.

Tamb =25°C.

2004 Nov 04 10

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 99-09-13

04-08-03

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Nov 04 11

Philips Semiconductors Product speciﬁcation

50 V, 3 A

NPN low VCEsat (BISS) transistor PBSS4350X

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

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for use in such applications do so at their own risk and

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reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

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Printed in The Netherlands R75/03/pp12 Date of release: 2004 Nov 04 Document order number: 9397 750 13883