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TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
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Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.37 V (max)
• Average forward current: IF (AV) = 5.0 A
• Repetitive peak reverse voltage: VRRM = 30 V
• Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 30 V
Average forward current IF (AV) 5.0 (Note 1) A
Peak one cycle surge forward current
(non-repetitive) IFSM 70 (50 Hz) A
Junction temperature Tj −40~125 °C
Storage temperature Tstg −40~150 °C
Note 1: Tℓ = 36°C: Rectangular waveform (α = 180°), VR = 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
VFM (1) I
FM = 1 A ⎯ 0.27 ⎯
VFM (2) I
FM = 3 A ⎯ 0.31 ⎯
Peak forward voltage
VFM (3) I
FM = 5 A ⎯ 0.35 0.37
V
IRRM (1) V
RRM = 5 V ⎯ 0.31 ⎯
Repetitive peak reverse current
IRRM (2) V
RRM = 30 V ⎯ 3.3 8.0
mA
Junction capacitance Cj V
R = 10 V, f = 1.0 MHz ⎯ 330 ⎯ pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm) ⎯ ⎯ 60
Rth (j-a) Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯ ⎯ 135
Thermal resistance
Rth (j-ℓ) ⎯ ⎯ ⎯ 16
°C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-4E1A
Weight: 0.023 g (typ.)
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Marking
Abbreviation Code Part No.
S4 CMS04
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when
voltage is applied. Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IF(AV) and Tj be below 100°C. When using this device, take the margin into consideration by
using an allowable Tamax-IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 100°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
Please refer to the Rectifiers databook for further information.
3.0 1.4
2.1
Unit: mm
1.4
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Maximum allowable lead temperature
Tℓ max (°C)
Instantaneous forward voltage vF (V)
iF – vF
Instantaneous forward current iF (A)
Average forward current IF (AV) (A)
PF (AV) – IF (AV)
Average forward power dissipation
PF (AV) (W)
Average forward current IF (AV) (A)
Maximum allowable ambinent temperature
Ta max ( ° C )
Average forward current IF (AV) (A)
Tℓ max – IF (AV)
T
a max
–
I
F (AV)
Device mounted on a ceramic board
(
board size: 50 mm × 50 mm
)
Maximum allowable lead temperature
Tℓ max (°C)
Average forward current IF (AV) (A)
Tℓ max – IF (AV)
0.1
0.0 1.40.2
1
10
100
0.4 0.6 0.8 1.0 1.2
125°C
75°C
Tj = 25°C
1 0.0 2 3 5 6
60
0
20
40
80
100
4 7 8
120
140
α = 60°
180°
270°
DC
120°
Conduction angle: α
VR = 5 V
360° 0° α
Rectangular
waveform
IF (AV)
0.0
1.2
0.0
0.4
0.8
1.8
1.6
2.4
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
α = 60°
120°
180°
DC
Conduction angle: α
360° 0° α
Rectangular
waveform
1 0.0 2 3 5 6
60
0
20
40
80
100
4 7 8
120
140
α = 60°
270°
DC
180°
120°
Conduction
angle: α
VR = 5 V
360°0° α
Rectangular
waveform
IF (AV)
1 0.0 2 3 5 6
60
0
20
40
80
100
4 7 8
120
140
α = 120°
180°
270°
DC
Conduction angle: α
VR = 15 V
360° 0° α
Rectangular
waveform
IF (AV)
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0.5
0.001 0.01 0.1 1 10 100 1000
1
10
100
500
Device mounted on a glass-epoxy board
Soldering land: 2.1 mm × 1.4 mm
Device mounted on a glass-epoxy board
Soldering land: 6.0 mm × 6.0 mm
Device mounted on a ceramic board
Soldering land: 2.0 mm × 2.0 mm
0.1
0 20 40 60 80 100 120 160
1
100
1000
140
10
Pulse test
20 V
VR = 30 V 15 V
10 V
5 V
VR = 3 V
100
1 10 100
300
500
1000
f = 1 MHz
Ta = 25°C
3 5 30 50
Reverse current IR (mA)
Peak surge forward current IFSM (A)
Reverse voltage VR (V)
Cj –VR (typ.)
Junction capacitance Cj (pF)
Number of cycles
Surge forward current (non-repetitive)
Junction temperature Tj (°C)
IR – Tj (typ.)
Reverse voltage VR (V)
P
R (AV) – VR (typ.)
Average reverse power dissipation
PR (AV) (W)
Transient thermal impedance rth (j-a) (°C/W)
rth (j-a) – t
Time (s)
0
1 10 100
60
80
100
35 30 50
f = 50 MHz
Ta = 25°C
40
20
4
8
12
16
0
0 10 20 30
24
28
20
DC
300°
240°
180°
120°
60°
360°
Conduction angle: α
T
j
= 125°C
VR
0°
Rectangular
waveform
α
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