SWITCHMODE Series
NPN Silicon Power Transistor
. . . designed for high speed, high current, high power applications.
•High DC current gain:
hFE min. = 20 at IC = 12 A
•Low VCE(sat), VCE(sat)
max. = 0.6 V at IC = 8 A
•Very fast switching times:
TF max. = 0.4 µs at IC = 25 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
200
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCBO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
250
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEBO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
7
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage (VBE = –1.5 V)
ÎÎÎÎÎ
VCEX
ÎÎÎÎÎÎ
250
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage (RBE = 100 Ω)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCER
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
240
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Current— Continuous
— Peak (PW 10 ms)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IC
ICM
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
40
50
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
Apk
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Current continuous
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
8
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
ÎÎÎÎÎ
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
250
ÎÎÎ
ÎÎÎ
Watts
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
–65 to 200
ÎÎÎ
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
0.7
ÎÎÎ
ÎÎÎ
C/W
Figure 1. Power Derating
1.0
0
TC, TEMPERATURE (°C)
40 80 160 200
0.4
0.8
0.6
0.2
120
DERATING FACTOR
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 9 1Publication Order Number:
BUV21/D
BUV21
40 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
200 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
BUV21
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎ
200
ÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current at Reverse Bias:
(VCE = 250 V, VBE = –1.5 V)
(VCE = 250 V, VBE = –1.5 V, TC = 125C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎ
ÎÎ
3.0
12.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Cutoff Current
(VCE = 160 V)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎ
ÎÎ
3.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Reverse Voltage
(IE = 50 mA)
ÎÎÎÎÎ
ÎÎÎÎÎ
VEBO
7
ÎÎÎÎ
ÎÎÎÎ
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Cutoff Current
(VEB = 5 V)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎ
ÎÎ
1.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IS/b
ÎÎ
ÎÎ
12
0.15
ÎÎ
ÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 12 A, VCE = 2 V)
(IC = 25 A, VCE = 4 V)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎ
ÎÎ
20
10
ÎÎ
ÎÎ
60
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 12 A, IB = 1.2 A)
(IC = 25 A, IB = 3 A)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎ
ÎÎ
0.6
1.5
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 25 A, IB = 3 A)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎ
ÎÎ
1.5
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain – Bandwidth Product
(VCE = 15 V, IC = 2 A, f = 4 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎ
8.0
ÎÎ
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS (Resistive Load)
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Turn-on Time
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
(I 25 A I I3A
ÎÎÎÎÎ
ÎÎÎÎÎ
ton
1.0
ÎÎÎÎ
ÎÎÎÎ
µs
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 25 A, IB1 = IB2 = 3 A,
V
CC
= 100 V
,
R
C
= 4 Ω
)
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
1.8
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
V
CC =
100
V
,
R
C =
4
Ω)
ÎÎÎÎÎ
ÎÎÎÎÎ
tf
0.4
ÎÎÎÎ
ÎÎÎÎ
1 Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
BUV21
http://onsemi.com
3
IC, COLLECTOR CURRENT (A)
Figure 2. Active Region Safe Operating Area
40
1
VCE, COLLECTOR-EMITTER VOLTAGE (V)
10 200
10
1
0.1
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25C, TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. “On” Voltages Figure 4. DC Current Gain
50
100
IC, COLLECTOR CURRENT (A)
110
40
0
30
20
10
VCE = 5 V
Figure 5. Resistive Switching Performance
3.0
0 5 10 15 25
VCE = 100 V
IC/IB1 = 8
IB1 = IB2
t, TIME (s)µ
2.0
1.0
tS
0.4
0.3
0.2
20
ton
tF
2.0
IC, COLLECTOR CURRENT (A)
110
1.6
IC/IB = 8
0.8
1.2
0.4
Figure 6. Switching Times Test Circuit
V, VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VBE
VCE
VCC
IB2
IB1 RB
RC
RC – RB: Non inductive resistances
VCC = 100 V
RC=4 Ω
RB= 2.2 Ω
10,000 µF
0
BUV21
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 197A–05
ISSUE J
TO–204 (TO–3)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.530 REF 38.86 REF
B0.990 1.050 25.15 26.67
C0.250 0.335 6.35 8.51
D0.057 0.063 1.45 1.60
E0.060 0.070 1.53 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N0.760 0.830 19.31 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.30 (0.012) Y M
T
M
Y
M
0.25 (0.010) T
–Q–
–Y–
2
1
L
GB
V
H
U
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