DCR4100W42 Phase Control Thyristor Preliminary Information DS5753-2.2 June 2005 (LN24005) FEATURES * Double Side Cooling * High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS * High Power Drives * High Voltage Power Supplies * Static Switches 4200V 3880A 53500A 1500V/s 400A/s * Higher dV/dt selections available VOLTAGE RATINGS Part and Ordering Number DCR4100W42 DCR4100W40 DCR4100W35 DCR4100W30 Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3500 3000 Conditions Tvj = -40 C to 125 C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Outline type code: W (See Package Details for further information) When ordering, select the required part number shown in the Voltage Ratings selection table. Fig. 1 Package outline For example: DCR4100W42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60 C unless stated otherwise Parameter Symbol Test Conditions Max. Units 3880 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 6095 A Continuous (direct) on-state current - 5725 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125 C 53.5 kA VR = 0 14.31 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.00631 C/W Single side cooled Anode DC - 0.01115 C/W Cathode DC - 0.01453 C/W Clamping force 76kN Double side - 0.0014 C/W (with mounting compound) Single side - 0.0028 C/W On-state (conducting) - 135 C Reverse (blocking) - 125 C Tstg Storage temperature range -55 125 C Fm Clamping force 68.0 84.0 kN 2/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125 C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125 C, gate open - 1500 V/s dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/s Gate source 30V, 10, Non-repetitive - 400 A/s tr < 0.5s, Tj = 125 C VT(TO) rT tgd Threshold voltage - Low level 700A to 4100A at Tcase = 125 C - 0.83 V Threshold voltage - High level 4100A to 12000A at Tcase = 125 C - 1.0 V On-state slope resistance - Low level 700A to 4100A at Tcase = 125 C - 0.1688 m On-state slope resistance - High level 4100A to 12000A at Tcase = 125 C - 0.1263 m TBD TBD s 250 500 s Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C tq Turn-off time Tj = 125 C, VR = 200V, dI/dt = 1A/s, dVDR/dt = 20V/s linear QS Stored charge IT = 2000A, Tj = 125 C, dI/dt - 1A/s, 1500 4500 C IL Latching current Tj = 25 C, VD = 5V TBD TBD mA IH Holding current Tj = 25 C, RG-K = , ITM = 500A, IT = 5A TBD TBD mA 3/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25 C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125 C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25 C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25 C TBD mA CURVES Instantaneous on-state current IT - (A) 7000 min 125 C max 125 C min 125 C max 25 C 6000 5000 4000 3000 2000 1000 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.348967 B = 0.066851 C = 0.000102 D = 0.003788 these values are valid for Tj = 125 C for IT 500A to 10000A 4/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR 130 Mean power dissipation - (kW) o 14 Maximum case temperature, T case ( C ) 16 12 10 8 180 120 90 60 30 6 4 2 110 100 90 80 70 60 50 40 30 20 10 0 0 0 1000 2000 3000 4000 5000 6000 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation - sine wave Fig.4 Maximum permissible case temperature, double side cooled - sine wave 130 16 180 120 90 60 30 120 110 100 90 80 70 60 50 40 30 14 Mean power dissipation - (kW) o Maximum heatsink temperature, T Heatsink - ( C ) 180 120 90 60 30 120 12 10 8 d.c. 180 120 90 60 30 6 4 20 2 10 0 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave 0 0 1000 2000 3000 4000 5000 6000 7000 8000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation - rectangular wave 5/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR 130 d.c. 180 120 90 60 30 120 110 100 d.c. 180 120 90 60 30 120 Maximum heatsik temperature Theatsink - (oC) Maximum permissible case temperature , Tcase - (C) 130 90 80 70 60 50 40 30 20 110 100 90 80 70 60 50 40 30 20 10 10 0 0 0 0 1000 2000 3000 4000 5000 6000 7000 8000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave 16 Thermal Impedance, Zth(j-c) - ( C/kW) Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave Double side cooled Double Side Cooling 14 1000 2000 3000 4000 5000 6000 7000 8000 Ti (s) Anode Side Cooling Anode side cooled Cathode side cooled 12 3 2.8048 4 1.3305 0.0106818 0.058404 0.3584979 1.1285 1.5197 3.2398 5.7622 0.6312 0.0170581 0.2424644 6.013 15.364 1.4106 2.4667 6.7451 3.9054 0.0158344 0.1786951 3.6201 6.196 Ri ( C/kW) Ti (s) Zth = [Ri x ( 1-exp. (t/ti))] 10 2 1.2993 Ri ( C/kW) Ti (s) Cathode Sided Cooling 1 0.8816 Ri ( C/kW) [1] 8 Rth(j-c) Conduction 6 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 4 Double side cooling Zth (z) 2 0 0.001 0.01 0.1 1 10 100 180 120 90 60 30 15 sine. 1.00 1.16 1.33 1.48 1.61 1.66 rect. 0.67 0.97 1.13 1.31 1.51 1.61 Anode Side Cooling Zth (z) 180 120 90 60 30 15 sine. 0.94 1.08 1.23 1.37 1.47 1.52 rect. 0.64 0.91 1.06 1.22 1.38 1.47 Cathode Sided Cooling Zth (z) 180 120 90 60 30 15 sine. 0.95 1.09 1.25 1.38 1.49 1.54 rect. 0.65 0.92 1.07 1.23 1.40 1.49 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW) 6/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR 180 30 120 40 ITSM 2 100 I2t 80 60 2 40 140 I t (MA s) 50 60 Conditions: Tcase= 125 C VR = 0 half-sine wave 160 Conditions: Tcase = 125 C VR =0 Pulse width = 10ms Surge current, ITSM - (kA) Surge current, ITSM- (kA) 60 20 40 20 20 0 1 10 Number of cycles Fig.10 Multi-cycle surge current 100 1 10 0 100 Pulse width, tP - (ms) Fig.11 Single-cycle surge current 7/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE O3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20 OFFSET (NOM.) TO GATE TUBE Device DCR1594SW28 DCR1595SW42 DCR1596SW52 DCR5450W22 DCR4910W28 DCR4100W42 DCR3640W52 DCR2950W65 DCR2450W85 Maximum Minimum Thickness Thickness (mm) (mm) 27.34 26.79 27.57 27.02 27.69 27.14 27.265 26.715 27.34 26.79 27.57 27.02 27.69 27.14 27.95 27.4 28.31 27.76 O120.0 MAX. O84.6 NOM. O1.5 CATHODE GATE ANODE O84.6 NOM. FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: W Fig.15 Package outline 8/9 www.dynexsemi.com DCR4100W42 SEMICONDUCTOR POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com