2SA1013-O
PNP
Epitaxial Silicon
Transistor
Features
• Capable of 0.9Watts of Power Dissipation.
• Collector-current -1.0A
• Collector-base Voltage -160V
• Operating and storage junction temperature range: -55к to +150к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0) -160 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0) -160 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0) -6.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=-150Vdc, IE=0) --- -1.0 uAdc
ICEO Collector Cutoff Current
(VCB=-120Vdc, IE=0) --- -10 uAdc
IEBO Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0) --- -1.0 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc) 65 310 ---
hFE(2) DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc) 40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc) --- -1.5 Vdc
VBE Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc) --- -0.75 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15 --- MHz
CLASSIFICATION OF HFE (1)
Rank R O Y
Range 60-120 120-200 200-300
TO-92MOD
A
B
C
D
E
F G
H
I
J
K
M
NL
DIMENSIONS
INCHES MM
DIM M I N MAX M I N MAX NOTE
A --- .030 -- - .750
B --- .039 -- - 1.00
C --- .031 --- .80
D --- .024 --- 0.60
E --- .201 -- - 5.10
F .050 1.27
G .050 1.27
H .100 2.54
I .039 1.00
J --- .087 -- - 2.20
K --- .024 --- .60
L - - - .323 - - - 8.20
M --- .413 --- 10.50
N -- - .161 --- 4.10
123
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2. COLLECTOR
3. BASE
omponents
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MCC
Revision: 3 2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
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x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
2SA1013-Y
2SA1013
2SA1013-R
MCC
Revision: 3 2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 2
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