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ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic Svmbol Min
*Forward Switching Voltage IN5158, IN5782, IN5788
IN5159, IN5783, IN5789
IN5160, IN5784, IN5790
IN5779, IN5785, IN5791
IN5780, IN5786, IN5792
IN5781, 1N5787, 1N5793
Vs 8.0
9.0
10
11
12
13
*Forward Switching Current lN5158thru IN5160, IN5779
thru IN5781
IN5782 thru IN5793 ~‘s -
*Forward Off-State Current IFM
(VF =0.75X VS) 1
*Reverse Current -~ IRM ~
(VR =VRM) \
‘Holding Current lN5158thru IN5160, 1N5779 1.0
thru IN5781
1N5782 thru IN5787 ,i10
IN5788 thru 1N5793 I0.1 :
(AC Voltage =10 mV, VF =O, f=100 kHz) “Q o
~.. ————_
Turn-On Time (Figure 2) ~<,;,:.~ ‘on _:
..$“<\*.
——Turn-Off Time (Figure 3) .*:*....~.
‘*:.
,,,,\,. .~,l. toff :
-.. . ...
,,.. !,, ...
Vlps
I
f0.1 ~
I
—, 0.1
I0.1 I
I0.1 ~
I‘———
i-i”, [
75(1) __,
250(1) :ns !
(+)
(-)
SCOPE
r
AuNIT
Tl—l . . . .
UNDER
.20: lb
When mwtooth waveform
appears at TP-1,
T=toff
.-
FIGURE 4 TYPICAL FORWARD
CONDUCTION CHARACTERISTICS
50
40
30
20 1.0 5,0 7.0
01.0 2.0 3.0 4.0 5.0 6.0 7.0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.5
–75 –50 –25 O25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (OC)
\.
\
5.0
3.0
2.0 \
\\\\1
1.0
0.7
0.5
0.3
0.2 1
,-.
0.1
–75 –50 –25 O25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
I–75 –50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
(
3
I
(
dvldt
Is
IF
]FM
IH
‘pulse
IRM
pD
–v
4-LAYER DIODE SYMBOLS AND DEFINITIONS
1
IR
FORWARD VOLTAGE APPLICATION RATE (v/Ps)
The rate of rise of forward voltage.
FORWARD BREAKOVER (swITCHt NG) CURRENT
The value of anode current at the instant the device
switches from the blocking to the “on” state, specified at
aparticular junction temperature.
FORWARD CURRENT The continuous or DC value.of
forward current during the “on” state. ,\L*f(.’
,:,.,.l~y.,
PEAK FORWARD BLOCKING CURRENT TR&.pe~b
anode current when the 4-layer diode is in the.;@$?*~?&te
for astated anode-to-cathode voltage and jun,~~~~ ‘&per-
ture. ,,t:,,*\..:j.i,,1$,$’
1.’..!4,,, ..,>
HOLDING CURRENT That value $$:,’$~~’hard anode
current below wh; ch the 4-laVer dio~$+~fi~$dhes from the
conducting state to the forward bl.o*,&{,~,$~kondition.
,il,$):~
PEAK PULSE CURRENT T$e ~ah’ repetitive current
that can flow through th:,+@@%~&~.*r the time duration
stated. y.! ‘!&,
.’1..
,,.,,.s>,).,,,.,,.~:
PEAK REVERSE B~~~~~ CURRENT The peak
current when the, $-Ia~~$,:@ode is in the reverse blocking
state for astate@ a@ode~to-cathode voltage and junction
temperature. ;~~~++’
STEADY ~~~~$$P~WER DISSIPATION
*i ~:;>:.,,‘~~.”~
,,. ,..
,i;:,\
toff
Vs
VF
VFE
VRM
point (90% of forward blocking voltage) and the point
10% above the “on” voltage under stated conditions.
TURN-OFF TIME The time interval required for the
device to regain control of its forward blocking character-
istic after interruption of forward anode current.
FORWARD BREAKOVER (SWITCHING) VOLTAGE
The positive anode voltage with respect to cathode re-
quired to switch the device from the high impedance
blocking state to the low impedance “on” state, specified
at aparticular junction temperature.
FORWARD VOLTAGE The forward voltage across the
device in the “on” state under stated conditions of current
and temperature.
FORWARD BLOCKING VOLTAGE The anode-to-cath-
ode voltage when the 4-layer diode is in the “off” state.
PEAK REVERSE VOLTAGE The maximum allowable
instantaneous value of reverse voltage (repetitive or contin-
uous DC) which can be applied to the device at astated
temperature without damage to the device.
Mechanical CHARACTERISTICS
CASE: Hermetically sealed all glass case
DIMENSIONS: JEDEC DO-7 Outline
FINISH: All external surfaces are corrosion resistant with readily solderable leads.
POLARITY: Cathode end indicated bv color band.
WEIGHT: 0.2 grams (approx.)
MOUNTING POSITION: AnV
(M)MOTOROLA Semiconductor Products Inc.
uOX 20912 .PHOENIX, AR]20NA 85036 .ASUBSIDIARY OF MOTOROLA INC.
969-5 PRINTED IN USA 12-72 IMPERIAL LITHO B33663 6,\4 N6510R1