BSS138
Document number: DS30144 Rev. 23 - 2
1 of 6
www.diodes.com
October 2020
© Diodes Incorporated
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON)
ID
TA = +25°C
50V
3.5Ω @ VGS = 10V
200mA
Description and Applications
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
System/Load Switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
https://www.diodes.com/products/automotive/automotive-
products/.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
BSS138-7-F
SOT23
3000/Tape & Reel
BSS138-13-F
SOT23
10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/
SOT23
Top View
Top View
D
GS
e3
D
S
G
Equivalent Circuit
BSS138
Document number: DS30144 Rev. 23 - 2
2 of 6
www.diodes.com
October 2020
© Diodes Incorporated
BSS138
Marking Information
Date Code Key
Year
2003
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
P
…
H
I
J
K
L
M
N
O
P
R
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
50
V
Drain-Gate Voltage RGS 20kΩ
VDGR
50
V
Gate-Source Voltage Continuous
VGSS
20
V
Gate-Source Voltage Non Repetitive, Pulse Width<50s
40
V
Drain Current Continuous
ID
200
mA
Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)
IDM
1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
300
mW
Thermal Resistance, Junction to Ambient (Note 5)
RJA
417
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
50
75
V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current
IDSS
0.5
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
0.5
1.2
1.5
V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance
RDS(ON)
1.4
3.5
Ω
VGS = 10V, ID = 0.22A
Forward Transconductance
gFS
100
mS
VDS = 25V, ID = 0.2A, f = 1.0kHz
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
50
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
8.0
pF
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
tD(ON)
20
ns
VDD = 30V, ID = 0.2A, RGEN = 50Ω
Turn-Off Delay Time
tD(OFF)
20
ns
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated’s suggested pad layout, which can be found on our
website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Guarantee by design. Not subject to production testing.
K38 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: H = 2020)
M or M = Month (ex: 9 = September)
BSS138
Document number: DS30144 Rev. 23 - 2
3 of 6
www.diodes.com
October 2020
© Diodes Incorporated
BSS138
0
0.1
0.2
0.3
0.4
0.5
0.6
010
91 23 4 5 6 7 8
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
j°V = 3.5V
GS
V = 3.25V
GS
V = 3.0V
GS
V = 2.75V
GS
V = 2.5V
GS
0
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
01 1.5
0.5 2 3.5 44.5
2.5 3
I , DRAIN-SOURCE CURRENT (A)
D
-55 C
°
150 C
°
25 C
°
V = 1V
DS
0.65
T, JUNCTION TEMPERATURE (
癈
)
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
V, GATE THRESHOLD VOLTAGE (V)
GS(th)
T, JUNCTION TEMPERATURE (
癈
)
Fig. 4 Gate Threshold Variation vs. Ambient Temperature
j
0
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250
礎
D
0
I , DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.160.140.12
0.1
150 C°
25 C°
V = 2.5V
GS
-55 C°
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
I , DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C°
-55 C°
25 C°
V = 2.75V
GS
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Junction Temperature
TJ = 25°C
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
ID = 250µA
BSS138
Document number: DS30144 Rev. 23 - 2
4 of 6
www.diodes.com
October 2020
© Diodes Incorporated
BSS138
0
1
2
3
4
5
6
00.1 0.2 0.3 0.4 0.5
I , DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
D
150 C°
-55 C°
25 C°
V = 4.5V
GS
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.5
1
1.5
2
2.5
3
3.5
00.1 0.2 0.3 0.4 0.5
I , DRAIN-CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain-Current
D
150 C°
-55 C°
25 C°
V = 10V
GS
R, DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I , DIODE CURRENT (A)
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
SD
0 0.2 0.4 0.6 0.8 1 1.2
150 C°
-55 C°
25 C°
C, CAPACITANCE (pF)
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
DS
0 5 10 15 20 25 30
V = 0V
f = 1MHz
GS
CrSS
COSS
CiSS
Ciss
Crss
Coss
BSS138
Document number: DS30144 Rev. 23 - 2
5 of 6
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October 2020
© Diodes Incorporated
BSS138
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
BSS138
Document number: DS30144 Rev. 23 - 2
6 of 6
www.diodes.com
October 2020
© Diodes Incorporated
BSS138
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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