LESHAN RADIO COMPANY, LTD.
M32–1/3
1
3
2
MMBTA92LT1
MMBTA93LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol
MMBTA92 MMBTA93
Unit
Collector–Emitter V oltage V CEO –300 –200 Vdc
Collector–Base V oltage V CBO –300 –200 Vdc
Emitter–Base V oltage V EBO –5.0 Vdc
Collector Current — Continuous I C–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBTA92LT1 = 2D, MMBTA93L T1 = 2E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage(3) V (BR)CEO Vdc
(I C = –1.0 mAdc, I B = 0) MMBTA92 –300 —
MMBTA93 –200 —
Collector–Emitter Breakdown Voltage V (BR)CBO Vdc
(I C = –100 µAdc, I E = 0) MMBTA92 –300 —
MMBTA93 –200 —
Emitter–Base Breakdown V oltage
(I E = –100 µAdc, I C = 0) V (BR)EBO –5.0 — Vdc
Collector Cutoff Current I CBO nAdc
( V CB = –200Vdc, I E = 0) MMBTA92 — –0.25
( V CB = –160Vdc, I E = 0) MMBTA93 — –0.25
Collector Cutoff Current I EBO — –0.1 µAdc
( V CB = –3.0Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
2
EMITTER
3
COLLECTOR
1
BASE
Value
LESHAN RADIO COMPANY, LTD.
M32–2/3
MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Max Unit
ON CHARACTERISTICS (3)
DC Current Gain hFE —
(I C =–1.0mAdc, V CE = –10 Vdc) Both Types 25 ––
(I C = –10 mAdc, V CE = –10Vdc) Both Types 40 ––
(I C = –30mAdc, V CE =–10 Vdc) MMBTA92 25 ––
MMBTA93 25 ––
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = –20mAdc, I B = –2.0 mAdc) MMBTA92 –– –0.5
MMBTA93 –– –0.5
Base–Emitter Saturation V oltage V BE(sat) — –0.9 Vdc
(I C = –20mAdc, I B = –2.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(3),(4) f T50 –– MHz
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Collector – Base Capacitance C cb pF
(V CB = –20 Vdc, I E = 0, f = 1.0 MHz) MMBTA92 –– 6.0
MMBTA93 –– 8.0
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
M32–3/3
MMBTA92LT1 MMBTA93LT1
T
J
= +125°C
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances I C , COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
h FE , DC CURRENT GAIN
C, CAPACITANCE (pF)
f
T
, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
V, VOLTAGE (VOLTS)
+25°C
–55°C
V
CE
= –10 Vdc
C
cb
C
ib
T
J
= 25°C
V
CE
= –20 Vdc
V
CE(sat)
@ I
C
/I
B
= 10 mA
V
BE
@ V
CE
= –10 V
100
50
20
10
5.0
2.0
1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500–1000
150
100
70
50
30
20
15 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100
100
80
60
40
30
20
0
–1.0 –2.0 –5.0 –10 –20 –50 –100
–1.0
–0.8
–0.6
–0.4
–0.2
0–1.0 –2.0 –5.0 –10 –20 –50 –100
