INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
02/27/06
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-247AD Package
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Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGP30B60KD-E
E
G
n-channel
C
TO-247AD
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 60
IC @ TC = 100°C Continuous Collector Current 30
ICM Pulsed Collector Current 120
ILM Clamped Inductive Load Current 120 A
IF @ TC = 25°C Diode Continuous Forward Current 60
IF @ TC = 100°C Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 304
PD @ TC = 100°C Maximum Power Dissipation 122
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
W
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.41
RθJC Junction-to-Case - Diode ––– ––– 1.32
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6.0 ––– g
°C/W
Thermal Resistance
VCES = 600V
IC = 30A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.95V
PD - 94388B
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Notes:
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω. Energy losses include "tail" and diode reverse recovery.
22
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ––– 102 153 IC = 30A
Qge Gate - Emitter Charge (turn-on) ––– 14 21 nC VCC = 400V
Qgc Gate - Collector Charge (turn-on) ––– 44 66 VGE = 15V
Eon Turn-On Switching Loss ––– 350 620 µJ IC = 30A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 825 955 VGE =15V, RG = 10Ω, L=200µH,
Etot Total Switching Loss ––– 1175 1575 LS = 150nH TJ = 25°C
td(on) Turn-On Delay Time ––– 46 60 IC = 30A, VCC = 400V
trRise Time ––– 28 39 VGE = 15V, RG = 10Ω L =200µH
td(off) Turn-Off Delay Time ––– 185 200 ns LS = 150nH, TJ = 25°C
tfFall Time ––– 31 40
Eon Turn-On Switching Loss ––– 635 1085 IC = 30A, VCC = 400V
Eoff Turn-Off Switching Loss ––– 1150 1350 µJ VGE = 15V,RG = 10Ω, L =200µH
Etot Total Switching Loss ––– 1785 2435 LS = 150nH TJ = 150°C
td(on) Turn-On Delay Time ––– 46 60 IC = 30A, VCC = 400V
trRise Time ––– 28 39 VGE = 15V, RG = 10Ω L =200µH
td(off) Turn-Off Delay Time ––– 205 235 ns LS = 150nH, TJ = 150°C
tfFall Time ––– 32 42
Cies Input Capacitance ––– 1750 ––– VGE = 0V
Coes Output Capacitance ––– 160 ––– pF VCC = 30V
Cres Reverse Transfer Capacitance ––– 60 ––– f = 1.0MHz
TJ = 150°C, IC = 120A, Vp =600V
VCC = 500V, VGE = +15V to 0V,
TJ = 150°C, Vp =600V, RG = 10Ω
VCC = 360V, VGE = +15V to 0V
Erec Reverse Recovery energy of the diode ––– 925 1165 µJ TJ = 150°C
trr Diode Reverse Recovery time ––– 125 ––– ns VCC = 400V, IF = 30A, L = 200µH
Irr Diode Peak Reverse Recovery Current ––– 43 48 A VGE = 15V,RG = 10Ω, LS = 150nH
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
RBSOA Reverse Bias Safe Operting Area FULL SQUARE
SCSOA Short Circuit Safe Operting Area 10 ––– –––
Ref.Fig.
23
CT.1
CT.4
CT.4
13,15
WF1,WF2
4
CT.2
CT.3
WF.4
17,18,19
20,21
CT.4,WF.3
CT.4
RG=10Ω
CT.4
14, 16
WF1,WF2
µs
Ref.Fig.
5, 6,7
9, 10,11
9,10,11
12
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– – – – V VGE = 0V, I C = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage – – – 0 . 4 – – – V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.95 2.35 V IC = 30A, VGE = 15V
––– 2.40 2.75 IC = 30A,VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage –– – - 10 – – – mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe Forward Transconductance ––– 18 ––– S VCE = 50V, I C = 50A, PW=80µs
ICES Zero Gate Voltage Collector Current ––– 5.0 250 µA VGE = 0V, VCE = 600V
––– 1000 2000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.30 1.55 V IF = 30A
––– 1.25 1.50 IF = 30A TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– – –– ±100 nA VGE = ±20V
8
IRGP30B60KD-E
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
0 20 40 60 80 100 120 140 160
TC (°C)
0
20
40
60
80
IC (A)
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
10 µs
100 µs
1ms
DC
10 100 1000
VCE (V)
1
10
100
1000
IC A)
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Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
012345
VCE (V)
0
10
20
30
40
50
60
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
012345
VCE (V)
0
10
20
30
40
50
60
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
012345
VCE (V)
0
10
20
30
40
50
60
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8. 0V
0.0 0.5 1.0 1.5 2.0
VF (V)
0
10
20
30
40
50
60
IF (A)
-40°C
25°C
150°C
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Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 15A
ICE = 30A
ICE = 60A
0 5 10 15 20
VGE (V)
0
50
100
150
200
250
ICE (A)
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
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Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 400V
RG = 10Ω; VGE = 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200µH; VCE = 400V
RG = 10Ω; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 400V
ICE = 30A; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 400V
ICE = 30A; VGE = 15V
020 40 60 80
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 20406080
IC (A)
0
500
1000
1500
2000
2500
3000
Energy (µJ)
EOFF
EON
025 50 75 100 125
RG (Ω)
0
500
1000
1500
2000
2500
3000
Energy (µJ)
EON
EOFF
025 50 75 100 125
RG (Ω)
10
100
1000
10000
Swiching Time (ns)
tR
tdOFF
tF
tdON
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C; IF = 30A
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
IF= 30A; TJ = 150°C
0500 1000 1500
diF /dt (A/µs)
0
5
10
15
20
25
30
35
40
45
50
IRR (A)
020 40 60 80
IF (A)
0
5
10
15
20
25
30
35
40
45
50
IRR (A)
RG = 4.7Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
RG = 10Ω
025 50 75 100 125
RG (Ω)
0
5
10
15
20
25
30
35
40
45
50
IRR (A)
0 500 1000 1500
diF /dt (A/µs)
0
1000
2000
3000
4000
5000
QRR (nC)
4.7Ω
47Ω
100 Ω
22Ω 60A
30A
15A
10Ω
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Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 30A; L = 600µH
Fig. 22- Typ. Capacitance vs. V CE
VGE= 0V; f = 1MHz
0 25 50 75 100 125
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
200V
400V
020 40 60 80
IF (A)
0
200
400
600
800
1000
1200
1400
Energy (µJ)
47Ω
22Ω
100 Ω
4.7Ω
10Ω
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
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Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Dur ation (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. P eak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.200 0.000428
0.209 0.013031
τJ
τJ
τ1
τ1τ2
τ2
R1
R1R2
R2
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Dur ation (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthj c + Tc
Ri (°C/W) τi (sec)
0.205 0.000136
0.505 0.001645
0.567 0.037985
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
80 V DUT
480V
1K
VCC
DUT
0
L
DC
4x
DUT
360V
L
Rg
VCC
diode cl am p /
DUT
DU T /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
IRGP30B60KD-E
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Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
-100
0
100
200
300
400
500
600
700
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
35
I
CE
(A )
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
-100
0
100
200
300
400
500
600
700
15.90 16.00 16.10 16.20 16.30
Time (µs )
V
CE
(V )
-10
0
10
20
30
40
50
60
70
I
CE
(A )
TEST CURRENT
90% te st current
5% VCE
1 0 % test curren t
tr
Eon Loss
-700
-600
-500
-400
-300
-200
-100
0
100
-0.25 -0.05 0.15 0.35
time (µS)
V
F
(V )
-40
-30
-20
-10
0
10
20
30
40
I
F
(A)
Peak
IRR
t
RR
Q
RR
10%
Peak
IRR
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00 15.00
time (µS)
V
CE
(V )
0
50
100
150
200
250
300
I
CE
(A )
V
CE
I
CE
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AD package is not recommended for Surface Mount Application.
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in milimeters (inches)
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Note: "P" in assembly line
pos it ion in dicat es "Lead-F r ee"
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/